Wyniki wyszukiwania dla: MAGNETOTRANZYSTOR POLOWY

• Horizontally-split-drain MAGFET - a highly sensitive magnetic field sensor

  Publikacja

  • W. Kordalski
  • M. Polowczyk
  • M. Panek

  - Bulletin of the Polish Academy of Sciences-Technical Sciences - Rok 2007

  We propose a novel magnetic field sensitive semiconductor device, viz., Horizontally-Split-Drain Magnetic-Field Sensitive Field-Effect Transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and a Gradual Channel Detachment Effect (GCDE) and is very similar to that of Popovic and Baltes's SDMAGFET. The...

  Pełny tekst do pobrania w portalu