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Abstract
A top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could be employed to measure the external factor intensity.
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- Accepted or Published Version
- DOI:
- Digital Object Identifier (open in new tab) 10.15199/48.2015.10.34
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- Category:
- Articles
- Type:
- artykuły w czasopismach recenzowanych i innych wydawnictwach ciągłych
- Published in:
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Przegląd Elektrotechniczny
pages 170 - 172,
ISSN: 0033-2097 - Language:
- English
- Publication year:
- 2015
- Bibliographic description:
- Łuszczek M., Turzyński M., Świsulski D.: Modelling of Graphene Field-Effect Transistor for lectronic sensing applications// Przegląd Elektrotechniczny. -., nr. 10 (2015), s.170-172
- DOI:
- Digital Object Identifier (open in new tab) 10.15199/48.2015.10.34
- Verified by:
- Gdańsk University of Technology
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