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Katalog Publikacji

Rok 2024

Rok 2023

  • Luminescence and energy-storage properties of Pr3+-doped YAlO3 crystals
    Publikacja
    • W. Gieszczyk
    • A. Mrozik
    • P. Bilski
    • Y. Zorenko
    • S. Witkiewicz-Łukaszek
    • S. Świontek
    • M. Środa
    • W. Gieszczyk

    - Journal of Luminescence - Rok 2023

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  • Low-volume label-free SARS-CoV-2 detection with the microcavity-based optical fiber sensor
    Publikacja
    • M. Janik
    • T. Gabler
    • M. Koba
    • M. Panasiuk
    • Y. Dashkevich
    • T. Łęga
    • A. Dąbrowska
    • A. Naskalska
    • S. Żołędowska
    • D. Nidzworski... i 3 innych

    - Scientific Reports - Rok 2023

    Accurate and fast detection of viruses is crucial for controlling outbreaks of many diseases; therefore, to date, numerous sensing systems for their detection have been studied. On top of the performance of these sensing systems, the availability of biorecognition elements specific to especially the new etiological agents is an additional fundamental challenge. Therefore, besides high sensitivity and selectivity, such advantages...

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  • Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response
    Publikacja

    - ENERGIES - Rok 2023

    In this paper, a low-voltage low-dropout analog regulator (ALDO) based on a native n-channel MOS transistor is proposed. Application of the native transistor with the threshold voltage close to zero allows elimination of the charge pump in low-voltage regulators using the pass element in a common drain configuration. Such a native pass transistor configuration allows simplification of regulator design and improved performance,...

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  • Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
    Publikacja
    • A. Rehman
    • G. Cywiński
    • W. Knap
    • J. Smulko
    • A. Balandin
    • S. Rumyantsev

    - APPLIED PHYSICS LETTERS - Rok 2023

    We report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...

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