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The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
Abstrakt
In this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase. The developed boron-doped diamond (BDD) films are a promising semiconducting material for sensing and high-power electronic devices due to band gap engineering and thermal management feasibility. The increased boron concentration in the gas phase induces a decrease in the average grain size, consequently resulting in lower surface roughness. The BDD sheets grown with [B]/[C] of 20,000 ppm reveal the metallic conductivity while the lower doped samples show p-type semiconductor character. The charge transport at room temperature is dominated by the thermally activated nearest-neighbor hopping between boron acceptors through impurity band conduction. At low temperatures (<300 K), the Arrhenius plot shows a non-linear temperature dependence of the logarithmic conductance pointing towards a crossover towards variable range hopping. The activation energy at high temperatures obtained for lowly-doped sheets is smaller than for nanocrystalline diamond bonded to silicon, while for highly-doped material it is similar. Developed sheets were utilized to fabricate two types of diamond-on-graphene heterojunctions, where boron doping is the key factor for tuning the shape of the current-voltage characteristics. The graphene heterojunction with the low boron concentration diamond sheet resembles a Schottky junction behavior, while an almost Ohmic contact response is recorded with the highly doped BDD sheet of metallic conductivity. The free-standing diamond sheets allow for integration with temperature-sensitive interfaces (i.e. 2D materials or polymers) and pave the way towards flexible electronics devices.
Cytowania
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7
CrossRef
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0
Web of Science
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6
Scopus
Autorzy (6)
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Adrian Nosek
- University of California Riverside
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Dong Hoon Shin
- Delft University of Technology
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Josephus G. Buijnsters
- Delft University of Technology
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Pełna treść
- Wersja publikacji
- Accepted albo Published Version
- DOI:
- Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1016/j.diamond.2022.109225
- Licencja
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otwiera się w nowej karcie
Słowa kluczowe
Informacje szczegółowe
- Kategoria:
- Publikacja w czasopiśmie
- Typ:
- artykuły w czasopismach
- Opublikowano w:
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DIAMOND AND RELATED MATERIALS
nr 128,
ISSN: 0925-9635 - Język:
- angielski
- Rok wydania:
- 2022
- Opis bibliograficzny:
- Rycewicz M., Nosek A., Shin D. H., Ficek M., Buijnsters J. G., Bogdanowicz R.: The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction// DIAMOND AND RELATED MATERIALS -Vol. 128, (2022), s.109225-
- DOI:
- Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1016/j.diamond.2022.109225
- Źródła finansowania:
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- NAWA
- IDUB
- Działalność statutowa/subwencja
- Weryfikacja:
- Politechnika Gdańska
wyświetlono 64 razy
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