Wyniki wyszukiwania dla: gallium nitride

• EMI attenuation in a DC-DC buck converter using GaN HEMT

  Publikacja

  • P. Derkacz
  • P. Musznicki
  • P. Chrzan

  - IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - Rok 2021

  A dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...

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• EMI mitigation of GaN power inverter leg by local shielding techniques

  Publikacja

  • P. Derkacz
  • J. Schanen
  • P. Jeannin
  • P. Chrzan
  • P. Musznicki
  • M. Petit

  - IEEE TRANSACTIONS ON POWER ELECTRONICS - Rok 2022

  This paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...

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• Performance Comparison of a 650 V GaN SSFET and CoolMOS

  Publikacja

  • P. Czyż
  • A. Reinke
  • A. Cichowski
  • W. Śleszyński

  - Rok 2016

  The new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....

• Paweł Derkacz

  Osoby

  Pawel B. Derkacz was born in Miastko, Poland, in 1993. He received the B.Sc. and M.Sc. degrees in electrical engineering from the Gdansk University of Technology (GUT), Gdansk, Poland, in 2016 and 2017, respectively. In October 2017, he joined the Faculty of Electrical and Control Engineering at GUT Gdansk. In June 2019, he joined the Grenoble Electrical Engineering Laboratory (G2Elab) at Grenoble Institute of Technology (Grenoble...