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Search results for: MOSFET MODELING
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JOURNAL OF MOLECULAR MODELING
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Journal of Chemical Information and Modeling
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APPLIED MATHEMATICAL MODELLING
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Dependence Modeling
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Multidiscipline Modeling in Materials and Structures
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Selection of the most adequate trip-modelling tool for integrated transport planning system
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A quasi-2D small-signal MOSFET model - main results
PublicationDynamic properties of the MOS transistor under small-signal excitation are determined by kinetic parameters of the carriers injected into the channel, i.e., the low-field mobility, velocity saturation, mobility at the quiescent-point (Q-point), longitudinal electric field in the channel, by dynamic properties of the channel, as well as by an electrical coupling between the perturbed carrier concentration in the channel and the...
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A Quasi-2D MOSFET Model — 2D-to-Quasi-2D Transformation
PublicationA quasi-two-dimensional (quasi-2D) representation of the MOSFET channel is proposed in this work. The representation lays the foundations for a quasi 2D MOSFET model. The quasi 2D model is a result of a 2D into quasi 2D transformation. The basis for the transformation are an analysis of a current density vector field and such phenomena as Gradual Channel Detachment Effect (GCDE), Channel Thickness Modulation Effect (CTME), and...
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A quasi-2D small-signal MOSFET model - main results
PublicationMain results stemming from a new quasi 2D non-quasi-static small-signal four-terminal model of the MOSFET are presented in this work. The model is experimentally verified up to 30 GHz.
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JOURNAL OF MOLECULAR GRAPHICS & MODELLING
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Modeling pragmatics for visual modeling language evaluation
PublicationPodczas oceny użyteczności języków modelowania wizualnego istnieje potrzeba uwzględnienia ich pragmatyki. Języki modelowania wizualnego mogą być stosowane w różnym kontekście, co powoduje różnice w wymaganiach, które są im stawiane. Jawny opis kontekstu użycia ułatwia precyzyjną ocenę. Pragmatyka składa się ze zbioru profili, które opisują konkretne konteksty użycia. W referacie podjęto próbę zastosowania modeli zadań do opisu...
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A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublicationThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
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Multi-Transformer Flyback Converter for Supplying Isolated IGBT and MOSFET Drivers
PublicationA multi transformer flyback converter topology for supplying transistor drivers is presented. The topology presents some advantages over typical multi output single transformer, as reduction of effective leakage inductance, equal magnetic coupling between primary and secondary circuits and better isolation between outputs. Simulation study carried out in the LTSpice IV program and preliminary experimental results indicate high...
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TIME- AND FREQUENCY-DOMAIN QUASI-2D SMALL-SIGNAL MOSFET MODELS
PublicationA novel approach to small-signal MOSFET modeling is presented in this book. As a result, time- and frequency-domain physics-based quasi-2D NQS four-terminal small-signal MOSFET models are proposed. The time-domain model provides the background to a novel DIBL-included quasi‑2D NQS four-terminal frequency-domain small-signal MOSFET model. Parameters and electrical quantities of the frequency-domain model are described by explicit...
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Journal of Multiscale Modeling
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ENVIRONMENTAL MODELING & ASSESSMENT
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Journal of Mathematical Modeling
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Statistics & Risk Modeling
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Computer Research and Modeling
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Computational Mathematics and Modeling
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Mathematical Modeling and Computing
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NATURAL RESOURCE MODELING
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Journal for Modeling in Ophthalmology
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MODELING IDENTIFICATION AND CONTROL
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Software and Systems Modeling
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Scientific Modeling and Simulations
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ECONOMIC MODELLING
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STATISTICAL MODELLING
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Magnetic field microsensor based on GaAs MESFET
PublicationA novel concept of the drain separation design in a horizontally-split-drain GaAs MAGFET sensor, based on epitaxial layer growth, was developed. Proper choice of GaAs/AlAs/GaAs epitaxial layer sequence provided good electrical isolation between the drain regions. The measured leakage current between the drain regions was in the range of nA for up to 2V drain voltage bias difference. Performed analytical and numerical calculations...
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Compatible DC and small-signal MOSFET models for radio and microwave frequency simulation
PublicationZaprezentowano nowy model stałoprądowy tranzystora MOS i kompatybilny z nim uogólniony nie-quasi-statyczny model małosygnałowy. Model stałoprądowy został eksperymentalnie zweryfikowany dla tranzystorów MOS o długości kanału od 75 nm do kilkunastu mikrometrów, a model małosygnałowy od zera herców do 30 GHz.
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A Model for Low Frequency Noise Generation in MOSFETs.
PublicationPrzedstawiono model generacji szumów małoczęstotliwosciowych tranzystora MOS. Model został użyty do symulacji szumów cienkotlenkowych tranzystorów MOS. Wyniki symulacji porównano z danymi pomiarowymi. Zaprezentowano sposób wykorzystania pomiarów szumów m.cz. do wyznaczania niektórych parametrów charakteryzujących tranzystory MOS.
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Systems Analysis Modelling Simulation
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Sparse autoregressive modeling
PublicationIn the paper the comparison of the popular pitch determination (PD) algorithms for thepurpose of elimination of clicks from archive audio signals using sparse autoregressive (SAR)modeling is presented. The SAR signal representation has been widely used in code-excitedlinear prediction (CELP) systems. The appropriate construction of the SAR model is requiredto guarantee model stability. For this reason the signal representation...
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MULTISCALE MODELING & SIMULATION
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Chemical Product and Process Modeling
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Journal of Computational Simulation and Modeling
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Journal of Water Management Modeling
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Complex Adaptive Systems Modeling
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Advances in Modeling and Analysis C
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Journal of Peridynamics and Nonlocal Modeling
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Journal of Nonlinear Modeling and Analysis
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Multi-transformer primary-side regulated flyback converter for supplying isolated IGBT and MOSFET drivers
PublicationThis paper presents primary-side voltage regulated multi-transformer quasi-resonant flyback converter (MTFC) for supplying isolated power switch drivers. The proposed topology offers distinct advantages over frequently used flyback converter possessing one high frequency transformer with isolated multiple outputs. Particularly, when a large number of separate dc supply units is required, then MTFC enables improved regular distribution...
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A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies.
PublicationW pracy zaprezentowano nowy małosygnałowy model tranzystora MOS, w którymuwzględnia się efekt nasycenia prędkości nośników. Model jest spójny fizycznie i może być stosowany w analizie dowolnej konfiguracji włączenia tranzystora.
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Device characteristics extraction by low frequency noise measurements; Someresults on the state-of-the-art MOSFET´s
PublicationPrzedstawiono wyniki pomiarów i analizy szumów tranzystorów MOSFET z izolatorem bramki wykonanym z SiO2 i HfO2. Wyniki pomiarów wykorzystano do oszacowania gęstości aktywnych stanów na powierzchni użytego tlenku i porównano z wynikami otrzymanymi metodą charge-pumping.
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Cezary Orłowski prof. dr hab. inż.
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COMBUSTION THEORY AND MODELLING
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Journal of Modelling in Management
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Journal of Choice Modelling
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Journal of Language Modelling
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Modelling, Measurement and Control A
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