Wyniki wyszukiwania dla: BINDING ENERGY - MOST Wiedzy

Twoje konto

zaloguj

Wyszukiwarka

Wyniki wyszukiwania dla: BINDING ENERGY

Filtry

wszystkich: 405
wybranych: 4

wyczyść wszystkie filtry

Filtry wybranego katalogu

  • Rok publikacji

  • Dziedzina

  • Jednostka administracyjna

  • Model otwartości

  • Źródło danych

wyczyść Filtry wybranego katalogu

Wyniki wyszukiwania dla: BINDING ENERGY

  • High resolution XPS analysis of BDD electrode functionalization steps towards SARS-CoV-2 detection

    Dane Badawcze
    open access

    This dataset contains the results of the high-resolution XPS analyses of a set of boron-doped diamond (BDD) electrodes after consecutive functionalization steps toward anchoring of a receptor capable of SARS-CoV-2 virus detection. The analysis was carried out in the binding energy range of C1s, N1s, O1s, Ni2p3/2. The measurements were carried out on...

  • Chemical investigation of the Al2O3 ultra-thin films

    Dane Badawcze
    open access

    Ultra-thin layers of oluminum oxide (Al2O3) were deposited by ALD method.  Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina...

  • Depth profile of the composition of 8 nm Al2O3 thin film

    Dane Badawcze
    open access

    8 nm layer of aluminum oxide (Al2O3) was deposited by ALD method on a s.  Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. To investigate the profile of concenration of...

  • Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method

    Dane Badawcze
    open access

    Thin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...