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Wyniki wyszukiwania dla: SCHOTTKY DIODE
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Probability distribution of flicker noise in AuNPdecorated graphene–Si Schottky barrier diode
PublikacjaWe present results of the probability distribution analysis of flicker noise generated in Au nanoparticle (AuNP) decorated graphene–Si Schottky barrier diodes with and without yellow light illumination (592 nm), close to the localized surface plasmon resonance in the AuNPs (586 nm). The AuNPs occupy imperfections in the single-layer graphene and reduce the flicker noise intensity generated in the graphene layer. The estimated probability...
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Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases
PublikacjaWe report results of the current–voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene–Si Schottky barrier diodes. Measurements were conducted in ambient air with addition of either of two organic vapors, tetrahydrofuran [(CH2)4O; THF] and chloroform (CHCl3), as also during yellow light illumination (592nm), close to the measured particle plasmon polariton frequency of the Au nanoparticle...
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Investigation of RTS Noise in Reverse Polarized Silicon Carbide Schottky Diodes
PublikacjaOne of the method of electronic device quality and reliability evaluation is observation of its inherent noise. The RTS phenomena usually indicates the presence of large defects in the structure of the material of the device, therefore it can be treated as an indicator of technology quality. In the paper authors present results of RTS investigations in reverse polarized Silicon Carbide Schottky diodes. Devices being studied are...
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Evaluation of SiC JFETs and SiC Schottky diodes for wind generation systems
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Enhanced gas sensing by graphene-silicon Schottky diodes under UV irradiation
PublikacjaThe effect of ultraviolet (UV) or blue irradiation on graphene/n-doped silicon Schottky junctions toward gas sensing was investigated. Schottky diodes were subjected to oxidizing nitrogen dioxide (NO2, 1–3 ppm) and reducing tetrahydrofuran (THF, 50–200 ppm), showing significantly different responses observed on the currentvoltage (I-V) characteristics, especially under UV light (275 nm). NO2 affected the resistive part of the forward region...
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Performance comparison of SiC Schottky diodes and silicon ultra fast recovery diodes
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Low Frequency Noise Measurement of Reverse Polarized Silicon Carbide Schottky Diodes
PublikacjaW artykule przedstawiono wyniki pomiaró szumów cz. wstecznie spolaryzowanych diod Schottky'ego.
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Electrical responses of Graphene-Silicon Schottky diodes toward nitrogen dioxide and tetrahydrofuran under irradiation
Dane BadawczeGraphene-Silicon Schottky junctions were utilized as gas sensors toward inorganic (nitrogen dioxide) and organic (tetrahydrofuran) gas qualitative and quantitative detection. The electrical responses of the sensors were collected in the form of current-voltage characteristics and measurements of current in time domain for a selected voltage bias. The...
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Electrical and noise responses of Graphene-Silicon Schottky diodes decorated with Au nanoparticles for light-enhanced sensing of organic gases
Dane BadawczeGraphene-Silicon Schottky junctions decorated with Au nanoparticles were used for light-enhanced detection of organic tetrahydrofuran and chloroform. Au nanoparticles exhibited localized surface plasmon resonance (LSPR) in the range of yellow light; thus yellow LED (wavelength of 592 nm) was utilized to induce the plasmonic effect, that increased the...
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Al-DIAMOND SCHOTTKY TUNNEL DIODES WITH BARRIER HEIGHT CONTROL
PublikacjaFew-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff...