Search
Didn't find any results in this catalog!
But we have some results in other catalogs.Filters
total: 4691
-
Catalog
displaying 1000 best results Help
Search results for: WIDE BANDGAP SEMICONDUCTORS, GAN TRANSISTORS, POWER TRANSISTORS, OVERCURRENT PROTECTION, SMPS, GATE CIRCUIT
-
Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
-
Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
-
Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
-
Thermal and Electrodynamic Risk of Residual Current Devices in the Case of Back-Up Protection by Overcurrent Circuit Breakers
PublicationResidual current operated circuit breakers without integral overcurrent protection should be back-up protected. As back-up protection devices, overcurrent circuit breakers are used. The maximum let-through energy and let-through current of the overcurrent devices were evaluated under laboratory conditions. The thermal and electrodynamic risk of residual current devices was analyzed.
-
Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
-
Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
-
Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
-
Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
-
Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
-
EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...