Generalized Einstein relation in disordered organic semiconductors: Influence of the acoustic phonons–charge carriers scattering

Jędrzej Szmytkowski

doi:10.1016/j.commatsci.2023.112131

Generalized Einstein relation in disordered organic semiconductors: Influence of the acoustic phonons–charge carriers scattering

Abstrakt

In this work, we analyze the generalized Einstein relation for disordered organic semiconductors with a non-equilibrium Druyvesteyn-type distribution function. The Druyvesteyn behavior of hot electrons in a solid state is associated with the acoustic phonons–charge carriers scattering. Such a case has been experimentally demonstrated in electroluminescent inorganic rare–earth–doped zinc chalcogenides. Therefore, we can assume that, in a part of organic materials used in organic light-emitting diodes (OLEDs), we can also find the Druyvesteyn-type distribution of charge carriers under external electric fields. It looks that the electric-field-dependent diffusion coefficient, which is observed in the phonon-induced hopping electron transport, plays a key role here. The theoretical analysis of the Einstein relation shows that for lower concentrations of charge carriers, the diffusivity–mobility ratio (D/\mu) reaches a value lower than 1 (in kT/q units). The temperature dependencies of D/\mu are similar to the tendencies reported for the equilibrium conditions. The obtained satisfactory agreement between experimental results and calculations based on the Druyvesteyn-type distribution function confirms the usefulness of the presented model.

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Kategoria:

Publikacja w czasopiśmie

Typ:

artykuły w czasopismach

Opublikowano w:

COMPUTATIONAL MATERIALS SCIENCE nr 223,
ISSN: 0927-0256

Język:

angielski

Rok wydania:

2023

Opis bibliograficzny:

Szmytkowski J.: Generalized Einstein relation in disordered organic semiconductors: Influence of the acoustic phonons–charge carriers scattering// COMPUTATIONAL MATERIALS SCIENCE -Vol. 223, (2023), s.112131-112131

DOI: