Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering - Publikacja - MOST Wiedzy

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Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering

Abstrakt

The paper is focused on a study of formation of TiOxNy thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O2 and N2. The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during the deposition process. Post-deposition thermal annealing was not employed. The chemical composition from x-ray photoelectron spectroscopy diagnostic reveals formation of TiOxNy structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N element's incorporation into the Ti-O lattice. Decrease in band-gap to values Eg ~ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar+, Ti+, Ti) is presented together with peak discharge current.

Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuł w czasopiśmie wyróżnionym w JCR
Opublikowano w:
JOURNAL OF PHYSICS D-APPLIED PHYSICS nr 43, strony 5203 - 5210,
ISSN: 0022-3727
Język:
angielski
Rok wydania:
2010
Opis bibliograficzny:
Stranak V., Quaas M., Bogdanowicz R., Hartmut S., Hubicka Z., Tichy M., Hippler R.: Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering// JOURNAL OF PHYSICS D-APPLIED PHYSICS. -Vol. 43, nr. Iss. 28 (2010), s.5203-5210
Weryfikacja:
Politechnika Gdańska

wyświetlono 7 razy

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