Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition - Publikacja - MOST Wiedzy

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Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition

Abstrakt

The influence of N2 concentration (1%–8%) in CH4/H2/N2 plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 6 0.25 at 550 nm) and extinction coefficient (0.05 6 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH4/H2 plasma contained micron-sized diamond grains, the films grown using CH4/H2/(4%)N2 plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

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Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuł w czasopiśmie wyróżnionym w JCR
Opublikowano w:
APPLIED PHYSICS LETTERS nr 108, strony 1 - 5,
ISSN: 0003-6951
Język:
angielski
Rok wydania:
2016
Opis bibliograficzny:
Ficek M., Sankaran K., Ryl J., Bogdanowicz R., Lin I., Haenen K., Darowicki K.: Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition// APPLIED PHYSICS LETTERS. -Vol. 108, (2016), s.1-5
DOI:
Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1063/1.4953779
Weryfikacja:
Politechnika Gdańska

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