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Wyniki wyszukiwania dla: TEMPERATURE MEASUREMENT
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Measurement spectrum obtained with the use of ZnO coated (100 nm) microsphere-based fiber-optic sensor - 300 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 100 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 140 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 160 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 180 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 220 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 200 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-0optic sensor - 250 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 210 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 300 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 270 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 190 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 260 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 290 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 170 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 280 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 150 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 230 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 240 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - 220 Celsius degrees
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - microsphere inspection s.2
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Measurement spectrum obtained with the use of ZnO coated microsphere-based fiber-optic sensor - microsphere inspection s.1
Dane BadawczeApplication of a microsphere-based fiber-optic sensor with 200 nm zinc oxide (ZnO) coating, deposited by Atomic Layer Deposition (ALD) method, for temperature measurements between 100°C and 300°C, is presented. The main advantage of integrating a fiber-optic microsphere with a sensing device is the possibility of monitoring the integrity of the sensor...
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Signature of Oxide-Ion Conduction in Alkaline-Earth-Metal-Doped Y3GaO6
PublikacjaWe have studied alkaline-earth-metal-doped Y3GaO6 as a new family of oxide-ion conductor. Solid solutions of Y3GaO6 and 2% −Ca2+-, −Sr2+-, and −Ba2+-doped Y3GaO6, i.e., Y(3−0.06)M0.06GaO6−δ (M = Ca2+, Sr2+, and Ba2+), were prepared via a conventional solid-state reaction route. X-ray Rietveld refined diffractograms of all the compositions showed the formation of an orthorhombic structure having the Cmc21 space group. Scanning electron...
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SEM images of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
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SEM images of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
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SEM images of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
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Oxygen partial pressure and temperature dependence of low frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of low frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of middle frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of middle frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of low frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of low frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Oxygen partial pressure and temperature dependence of middle frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of middle frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
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Nonlinear impedance of 45Bi2VO5.5-55SrB4O7 fully crystallized glass measured with impedance spectroscopy method at high temperature region
Dane BadawczeThe nonlinear electrcial properties of 45Bi2VO5.5-55SrB4O7 fully crystallized glass was measured by impedance spectroscopy method.
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Oxygen partial pressure and temperature dependence of R-CPE2 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
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Oxygen partial pressure and temperature dependence of R-CPE1 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Linear impedance of Bi2VO5.5 ceramic of thickness 2.88 mm measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrical properties of Bi2VO5.5 ceramic of thickness 2.88 mm was measured by impedance spectroscopy method.
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Oxygen partial pressure and temperature dependence of R-CPE1 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Linear impedance of 5(2Bi2O3-V2O5)-95SrB4O7 glass measured with impedance spectroscopy method at high temperature region
Dane BadawczeThe linear electrcial properties of 5(2Bi2O3-V2O5)-95SrB4O7 glass was measured by impedance spectroscopy method.
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Nonlinear impedance of 35Bi2VO5.5-65SrB4O7 fully crystallized glass measured with impedance spectroscopy method at high temperature region
Dane BadawczeThe nonlinear electrcial properties of 35Bi2VO5.5-65SrB4O7 fully crystallized glass was measured by impedance spectroscopy method.
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Linear impedance of 25Na2O–20CaO–5P2O5–50SiO2 glass measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrical properties of 25Na2O–20CaO–5P2O5–50SiO2 glass was measured by impedance spectroscopy method.
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Linear impedance of 58(2Bi2O3-V2O5)-42SrB4O7 glass measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrcial properties of 58(2Bi2O3-V2O5)-42SrB4O7 glass was measured by impedance spectroscopy method.
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Linear impedance of 50(2Bi2O3-V2O5)-50SrB4O7 glass measured with impedance spectroscopy method at high temperature region
Dane BadawczeThe linear electrcial properties of 50(2Bi2O3-V2O5)-50SrB4O7 glass was measured by impedance spectroscopy method.
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Oxygen partial pressure and temperature dependence of R-CPE2 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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Linear impedance of 5(2Bi2O3-V2O5)-95SrB4O7 glass measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrcial properties of 5(2Bi2O3-V2O5)-95SrB4O7 glass was measured by impedance spectroscopy method.
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Nonlinear impedance of 5(2Bi2O3-V2O5)-95SrB4O7 glass measured with impedance spectroscopy method at high temperature region
Dane BadawczeThe nonlinear electrcial properties of 5(2Bi2O3-V2O5)-95SrB4O7 glass was measured by impedance spectroscopy method.
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Linear impedance of Bi2VO5.5 ceramic of thickness 2.52 mm measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrical properties of Bi2VO5.5 ceramic of thickness 2.52 mm was measured by impedance spectroscopy method.
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Linear impedance of 50(2Bi2O3-V2O5)-50SrB4O7 glass measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe linear electrcial properties of 50(2Bi2O3-V2O5)-50SrB4O7 glass was measured by impedance spectroscopy method.
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Nonlinear impedance of 58(2Bi2O3-V2O5)-42SrB4O7 glass measured with impedance spectroscopy method at low temperature region
Dane BadawczeThe nonlinear electrcial properties of 58(2Bi2O3-V2O5)-42SrB4O7 glass was measured by impedance spectroscopy method.
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Nonlinear impedance of 30Bi2VO5.5-70SrB4O7 fully crystallized glass measured with impedance spectroscopy method at high temperature region
Dane BadawczeThe nonlinear electrcial properties of 30Bi2VO5.5-70SrB4O7 fully crystallized glass was measured by impedance spectroscopy method.
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Oxygen partial pressure and temperature dependence of R-CPE1 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
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The scanning spreading resistance microscopy (SSRM) studies of heavy boron-doped diamond oxidation under high-temperature
Dane BadawczeThe dataset contains the results of scanning spreading resistance microscopy (SSRM) of heavy boron-doped diamond (BDD) electrodes subjected to high-temperature oxidation in a furnace at 600 Celsius. The micrographs reveal the local change of electric properties at certainly crystallographic orientations of BDD grains and at the grain boundaries due...
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Oxygen partial pressure and temperature dependence of R-CPE2 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...