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Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films
Abstrakt
Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ~ 0.02 with three different B/C doping concentrations of B/C ~ 2500 ppm, 5000 ppm, 7500 ppm. AFM topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74 eV to 4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ~ 7500 ppm) have shown the low resistance value ~ 9.29 Ω for CVD diamond/SCD IIa, and the resistance value ~ 16.55 Ω for CVD diamond/SCD Ib samples.
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Autorzy (10)
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Magdalena Daniela Tamulewicz-Szwajkowska
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Krzysztof Gajewski
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Miroslaw Sawczak
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Aneta Lewkowicz
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Teodor Gotszalk
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Pełna treść
- Wersja publikacji
- Accepted albo Published Version
- DOI:
- Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1088/1361-6528/ac4130
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Informacje szczegółowe
- Kategoria:
- Publikacja w czasopiśmie
- Typ:
- artykuły w czasopismach
- Opublikowano w:
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NANOTECHNOLOGY
nr 33,
ISSN: 0957-4484 - Język:
- angielski
- Rok wydania:
- 2022
- Opis bibliograficzny:
- Kunuku S., Ficek M., Wieloszynska A., Tamulewicz-Szwajkowska M. D., Gajewski K., Sawczak M., Lewkowicz A., Ryl J., Gotszalk T., Bogdanowicz R.: Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films// NANOTECHNOLOGY -Vol. 33,iss. 12 (2022), s.126603-
- DOI:
- Cyfrowy identyfikator dokumentu elektronicznego (otwiera się w nowej karcie) 10.1088/1361-6528/ac4130
- Źródła finansowania:
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- Publikacja bezkosztowa
- Weryfikacja:
- Politechnika Gdańska
wyświetlono 132 razy