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Search results for: boron doping
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Enhanced boron doping of thin diamond films grown in deuterium-rich microwave plasma
PublicationThe boron-doped diamond thin films were growth in deuterium rich microwave plasma in CVD process. The mechanism of influence of plasma composition on boron doping level was studied using optical emission spectroscopy. Deuterium rich plasma results in an increased dissociation of B2H6 precursor and intense boron-radicals' production. In consequence, a higher doping level of diamond films was observed by means of Laser Induced Breakdown...
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Optimization of boron-doping process of titania nanotubes via electrochemical method toward enhanced photoactivity
PublicationIn this work, we were focused on the development of the electrochemical approach resulting in a stable boron doping of titania nanotubes. The doping procedure concerns anodic polarization of as-anodized titania in a H3BO3 solution acting as n boron precursor. The series of attempts were taken in order to elaborate the most beneficial doping conditions. The parameters of electrochemical doping allowing to obtain boron-doped titania...
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Influence of the boron doping level on the electrochemical oxidation of the azo dyes at Si/BDD thin film electrodes
PublicationIn this study the efficiency of electrochemical oxidation of aromatic pollutants, such as reactive dyes, at boron-doped diamond on silicon (Si/BDD) electrodes was investigated. The level of [B]/[C] ratio which is effective for the degradation and mineralization of selected aromatic pollutants, and the impact of [B]/[C] ratio on the crystalline structure, layer conductivity and relative sp3/sp2 coefficient of a BDD electrode were...
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Influence of the boron doping level on the electrochemical oxidation of raw landfill leachates: advanced pre-treatment prior to the biological nitrogen removal
PublicationThe electrochemical oxidative treatment of landfill leachates (LLs) containing high amounts of ammonia nitrogen and organic matter was used as a promising method, prior to biological processes, to achieve the final effluent quality that would be acceptable by current regulations. The deposited boron-doped diamond electrodes (BDDs) with different boron doping concentrations (10000, 5000 and 500 ppm of B) were applied as anodes....
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Tailoring Electro/Optical Properties of Transparent Boron-Doped Carbon Nanowalls Grown on Quartz
PublicationCarbon nanowalls (CNWs) have attracted much attention for numerous applications in electrical devices because of their peculiar structural characteristics. However, it is possible to set synthesis parameters to vary the electrical and optical properties of such CNWs. In this paper, we demonstrate the direct growth of highly transparent boron-doped nanowalls (B-CNWs) on optical grade fused quartz. The effect of growth temperature...
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Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity
PublicationThis paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor – boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania...
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Optical properties of boron-doped nanocrystalline diamond films studied by spectroscopic ellipsometry
PublicationThe optical properties of boron-doped nanocrystalline diamond films, coated using Microwave Plasma Enhanced Chemical Vapour Deposition (μPE CVD) system, were analyzed by spectroscopic ellipsometry. Diamond films were deposited on silicon substrates. The ellipsometry data (refractive index (n(λ)), extinction coefficient (k(λ)) were modeled using dedicated software. Evolution of the optical structure with boron doping was observed...
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In-situ optical diagnostics of boron-doped diamond films growth
PublicationInterferometry is a desirable method for in-situ measurement of thin, dielectric film growth, as it don't modify conditions of film deposition. Here we present interferometrical measurements of thickness of doped diamond films during Chemical Vapor Deposition (CVD) process. For this purpose we used a semiconductor laser with a 405nm wavelength. Additional ex-situ measurement using spectral interferometry and ellipsometry...
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The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
PublicationIn this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase....
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Scanning electron microscopy (SEM) images of boron-doped diamond thin films at poly(lactic acid)
Open Research DataThe dataset contains the photos obtained by scanning electron microscope(SEM), revealing the surface morphology and cross-section of boron-doped diamond electrodes on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm. The top views of...
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Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films
PublicationBoron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been...
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Electrochemical oxidation of landfill leachate using boron-doped diamond anodes: pollution degradation rate, energy efficiency and toxicity assessment
PublicationElectrochemical oxidation (EO), due to high efficiency and small carbon footprint, is regarded as an attractive option for on-site treatment of highly contaminated wastewater. This work shows the effectiveness of EO using three boron-doped diamond electrodes (BDDs) in sustainable management of landfill leachate (LL). The effect of the applied current density (25–100 mA cm−2) and boron doping concentration (B/C ratio: 500 ppm, 10,000...
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Biophotonic low-coherence sensors with boron-doped diamond thin layer
PublicationLow-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective...
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Electrochemical oxidation of PFOA and PFOS in landfill leachates at low and highly boron-doped diamond electrodes
PublicationPolyfluorinated alkyl substances (PFASs) may reach landfill leachates (LLs) due to improper waste management. In this study perfluorooctanoate (PFOA) and perfluorooctane sulphonate (PFOS) were used as representatives of PFASs in the decomposition on boron-doped diamond electrodes (BDDs) with high (10k ppm) and low (0.5k ppm) boron doping concentrations. The result shows that although better COD removal efficacies are obtained on...
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Facile preparation of extremely photoactive boron-doped TiO2 nanotubes arrays
PublicationDoping of TiO2 nanotube arrays with boron was realized via electrochemical treatment of as-anodized titania immersed in electrolyte containing boric acid. The photoactivity of doped and pure titania was examined by means of photoelectrochemical and photocatalytic response under UV-vis irradiation. The results showed that photocurrent density of B-TNTs is remarkably higher (7.5 times) than density of pure TiO2 nanotube arrays. Furthermore,...
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Diamond-Phase (Sp3-C) Rich Boron-Doped Carbon Nanowalls (Sp2-C): A Physico-Chemical And Electrochemical Properties
PublicationThe growth of B-CNW with different boron doping levels controlled by the [B]/[C] ratio in plasma, and the influence of boron on the obtained material’s structure, surface morphology, electrical properties and electrochemical parameters, such as -ΔE and k°, were investigated. The fabricated boron-doped carbon nanowalls exhibit activity towards ferricyanide redox couple, reaching the peak separation value of only 85 mV. The flatband...
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Gas Composition Influence on the Properties of Boron-Doped Diamond Films Deposited on the Fused Silica
PublicationThe main subject of this study are molecular structures and optical properties of boron-doped diamond films with [B]/[C] ppm ratio between 1000 and 10 000, fabricated in two molar ratios of CH 4 -H 2 mixture (1 % and 4 %). Boron-doped diamond (BDD) film on the fused silica was presented as a conductive coating for optical and electronic purposes. The scanning electron microscopy images showed homogenous and polycrystalline surface...
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Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes
PublicationFabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. Nanocrystalline boron doped -diamond (B-NCD) films were deposited using Microwave Plasma Assisted Chemical Vapour Deposition (MW PA CVD) method. The variation of B-NCD morphology, structure and optical parameters were particularly investigated. The use of truncated...
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Electrical characterization of diamond/boron doped diamond nanostructures for use in harsh environment applications
PublicationThe polycrystalline boron doped diamond (BDD) shows stable electrical properties and high tolerance for harsh environments (e.g. high temperature or aggressive chemical compounds) comparing to other materials used in semiconductor devices. In this study authors have designed electronic devices fabricated from non-intentionally (NiD) films and highly boron doped diamond structures. Presented semiconductor devices consist of highly...
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Nitrogen-Incorporated Boron-Doped Nanocrystalline Diamond Nanowires for Microplasma Illumination
PublicationThe origin of nitrogen-incorporated boron-doped nanocrystalline diamond (NB-NCD) nanowires as a function of substrate temperature (Ts) in H2/CH4/B2H6/N2 reactant gases is systematically addressed. Because of Ts, there is a drastic modification in the dimensional structure and microstructure and hence in the several properties of the NB-NCD films. The NB-NCD films grown at low Ts (400 °C) contain faceted diamond grains. The morphology...