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Optoelectronic system for monitoring of thin diamond layers growth

Abstrakt

Development of the optoelectronic system for monitoring of diamond/DLC (Diamond-Like-Carbon) thin films growth during mu PA ECR CVD (Microwave Plasma Assisted Electron Cyclotron Resonance Chemical Vapour Deposition) process is described. The multi-point Optical Emission Spectroscopy (OES) and Raman spectroscopy were employed as non-invasive optoelectronic tools. Dissociation of H-2 molecules, excitation and ionization of hydrogen atoms as well as spatial distribution of the molecules became subjects of the DES investigation. The most significant parameters of the deposited film like molecular composition of the film (ratio of diamond sp(3), graphite sp(2) and amorphous phases), presence of defects and rate of the film growth can be investigated by means of Raman spectroscopy. Modular Raman system for in-situ monitoring of the film growth, equipped with fibre probes, was designed. Investigation with use of optoelectronic tools provides important data about CVD process progress as well as enables optimization of DLC synthesis parameters and improvement of synthesized films quality.

Informacje szczegółowe

Kategoria:
Publikacja w czasopiśmie
Typ:
artykuł w czasopiśmie wyróżnionym w JCR
Opublikowano w:
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS nr 12, strony 1660 - 1665,
ISSN: 1454-4164
Język:
angielski
Rok wydania:
2010
Opis bibliograficzny:
Bogdanowicz R., Gnyba M., Wroczyński P., Kosmowski B.: Optoelectronic system for monitoring of thin diamond layers growth// JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. -Vol. 12, nr. Iss. 8 (2010), s.1660-1665

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