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wszystkich: 197
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Wyniki wyszukiwania dla: SEMICONDUCTOR
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A method of RTS noise identification in noise signals of semiconductor devices in the time domain
PublikacjaIn the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first)...
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Tunable semiconductor laser application for interferometric optical fibersensors.Optical and Electronic Sensors V.
PublikacjaW pracy przedstawiono metody stabilizacji punktu pracy światłowodowych sensorów interferometrycznych. W metodach tych wykorzystuje się układy regulacji sterujące długością fali przestrajalnego lasera półprzewodnikowego. Przedstawiono tryby pracy układów regulacji oraz problemy związane z ich projektowaniem i realizacją. Przeanalizowano ograniczenia sensorów wykorzystujących powyższe układy. Dokonano weryfikacji eksperymentalnej...
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Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions
PublikacjaOrganic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic...
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Techniques of interference reduction in probe system for wafer level noise measurements of submicron semiconductor devices.
PublikacjaPrzedstawiono skrótowo system do ostrzowych pomiarów szumów struktur submikronowych. Znaczny wpływ na pomiary ostrzowe mają zakłócenia i szumy własne systemu, zwłaszcza zakłócenia o wysokim poziomie wpraowadzane przez ostrza (fluktuacje rezystancji styków ostrza do struktury powodowane przez wibracje i udary mechaniczne w środowisku pomiarowym)i środowisko elektromagnetyczne. Zakłócenia okresowe powodowane przez wibracje i pola...
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Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model
PublikacjaThis article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore–Gibson–Thompson (MGT) equation of the fourth-order serves as the theoretical framework...
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Novel Structures and Applications of Graphene-Based Semiconductor Photocatalysts: Faceted Particles, Photonic Crystals, Antimicrobial and Magnetic Properties
PublikacjaGraphene, graphene oxide, reduced graphene oxide and their composites with various compounds/materials have high potential for substantial impact as cheap photocatalysts, which is essential to meet the demands of global activity, offering the advantage of utilizing “green” solar energy. Accordingly, graphene-based materials might help to reduce reliance on fossil fuel supplies and facile remediation routes to achieve clean environment...
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The use of recycled semiconductor material in crystalline silicon photovoltaic modules production - A life cycle assessment of environmental impacts
PublikacjaTo offset the negative impact of photovoltaic modules on the environment, it is necessary to introduce a longterm strategy that includes a complete lifecycle assessment of all system components from the production phase through installation and operation to disposal. Recycling of waste products and worn-out systems is an important element of this strategy. As the conclusions from the previous studies have shown, thermal treatment...
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FFT analysis of temperature modulated semiconductor gas sensor response for the prediction of ammonia concentration under humidity interference
PublikacjaThe increasing environmental contamination forces the need to design reliable devices for detecting of the volatile compounds present in the air. For this purpose semiconductor gas sensors, which have been widely used for years, are often utilized. Although they have many advantages such as low price and quite long life time, they still lack of long term stability and selectivity. Namely, environmental conditions have significant...
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Real-time working gas recognition system based on the array of semiconductor gas sensors and portable computer Raspberry PI
PublikacjaThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and low-cost alternative for other devices, like gas analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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High resolution X-ray diffractometry and reflectometry of semiconductor nano- and micro- structures based on X-ray refractive optics
PublikacjaIn this thesis proposed, discussed and studied novel synchrotron X-ray diffractometry and reflectometry methods based on a refractive optics. The experimental results obtained from the ID06 beamline at ESRF, Grenoble, France are presented and analyzed in this work to demonstrate a high angular and space resolution in addition to the opportunity to manage in situ and on operando experiments with the help of proposed X-ray optical...
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Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light
PublikacjaA novel synthesis process was used to prepare TiO2 microspheres, TiO2 P-25, SrTiO3 and KTaO3 decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD),...
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Oxygen Aspects in the High-Pressure and High-Temperature Sintering of Semiconductor Kesterite Cu2ZnSnS4 Nanopowders Prepared by a Mechanochemically-Assisted Synthesis Method
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CALIBRATION OF LOW ENERGY X-RAY EXPERIMENTAL SETUP WITH STRONGLY FILTERED BEAM USING DATA FROM A SEMICONDUCTOR AND A THERMOLUMINESCENT DETECTORS
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Interferometric optical fiber sensors with active stabilization of the operating point using a tunable semiconductor laser. Optical Fibres and Their Applications VIII.
PublikacjaW pracy przedstawiono wyniki badań światłowodowych interferometrycznych sensorów siły wykonanych w konfiguracji interferometru Michelsona i wykorzystujących aktywną stabilizację punktu pracy przy pomocy zmiany długości fali źródła. Porównano dwie klasy omawianych sensorów a następnie zrealizowano sensor. W konstrukcji sensora zastosowano modulator z pośrednim pomiarem siły. Mierzona siła jest zamieniana na ciśnienie hydrostatyczne,...
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Impedancje i składowe prądu zaburzeń w obwodach z łącznikami półprzewodnikowymi = Impedances and disturbance current components in the circuits with semiconductor switches
PublikacjaW referacie przedstawiono pewien sposób określenia impedancji i składowych prądu zaburzeń dla przypadku obwodu z łącznikiem półprzewodnikowym. Określono widmową impedancje obciążenia i impedancje wewnętrzną źródła oraz rozpływy składowych prądu zaburzeń. Zaprezentowano wyniki obliczeń dla pewnego przypadku obwodu. W wnioskach omówiono wpływ przyjętego układu zastępczego źródła zaburzeń oraz częstotliwości charakterystycznej na...
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Effect of band gap on power conversion efficiency of single-junction semiconductor photovoltaic cells under white light phosphor-based LED illumination
PublikacjaOn the basis of the detailed balance principle, curves of efficiency limit of single-junction photovoltaic cells at warm and cool white light phosphor-based LED bulbs with luminous efficacy exceeding 100 lm/W have been simulated. The effect of energy band gap and illuminance on the efficiencies at warm and cool light is discussed. The simulations carried out show that maximum power conversion efficiency at 1000 lx reaches 52.0%...
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A model of a tunable quantum dot in a semiconducting carbon nanotube
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Four-body recombination in organic bulk heterojunction solar cells: an alternative interpretation
PublikacjaWe demonstrate a new interpretation of the previously reported quadrimolecular recombination in organic bulk heterojunction solar cells. It is suggested that the recently described (Szmytkowski 2012 Phys. Status Solidi RRL 6 300) interaction between exciton and electron–hole Langevin bound pair formed across the donor–acceptor interface is a four-particle process. This is in opposition to the treatment of this effect as a three-particle...
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On the tendency of temperature and electric field dependences of interface recombination in P3HT:PCBM organic bulk heterojunction solar cells
PublikacjaWe demonstrate theoretical explanation of the temperature and electric field dependences of recombination coefficients in an organic P3HT:PCBM bulk heterojunction solar cell. Based onthe model of interface recombination, two analytical formulas describing the relative ratio of the interface (γI ) to the Langevin (γL) recombination coefficients have been derived. Our analysis indicates that the sign of parameters φT and φF determines...
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The photocurrent quantum efficiency dependence on the applied voltage in organic solar cells
PublikacjaWe demonstrate that our recently reported model (Szmytkowski 2007 J. Phys. D: Appl. Phys. 40 3352) of the photocurrent quantum efficiency in organic semiconductors explains the external quantum efficiency dependence on the electric field in organic solar cells. This effect can be explained by taking into account that the photogeneration of charge carriers occurs via the electron-hole pair dissociation and the space charge effects...