Wyniki wyszukiwania dla: GRAPHENE, FIELD-EFFECT TRANSISTOR, GFET, SENSOR
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The behavioural model of graphene field-effect transistor
PublikacjaThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
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Graphene field-effect transistor application for flow sensing
PublikacjaMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
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Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublikacjaA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Dane BadawczeThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel
Dane BadawczeThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Dane BadawczeThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublikacjaThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Electrical and noise responses of graphene back-gated field-effect transistors enhanced by UV light for organic vapors sensing
Dane BadawczeBack-gated field-effect transistors with graphene channels (GFETs) were investigated toward organic vapors sensing. Two methods were used for sensing experiments including DC characteristics measurements and fluctuation-enhanced sensing by low-frequency noise studies. The data set consists of raw and modified data on GFET responses to acetonitrile,...
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Electrical responses of nanostructured ZrS3 as field-effect transistor for nitrogen dioxide, ethanol, and acetone detection enhanced by visible light
Dane BadawczeSmall-area layers of nanostructured ZrS3 were fabricated and measured in the field-effect transistor configuration. Irradiation with visible light enabled generating photocurrent and increasing the sensitivity to selected ambient gases: nitrogen dioxide, ethanol, and acetone. The data set consists of electrical responses (current vs. voltage characteristics...
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RECENT ADVANCES IN GRAPHENE APPLICATION FOR ELECTRONIC SENSING
PublikacjaThe great interest in graphene is caused by its potential for constructing various sensors exhibiting excellent parameters. The high carrier mobility and the unique band structure of graphene makes it promising especially in the field-effect transistors (GFET) applications. In this article, recent advances of the selected graphene-based sensor applications were presented and the possible directions for further investigations were...
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Pulsed UV-irradiated Graphene Sensors for Ethanol Detection at Room Temperature
PublikacjaA graphene-based gas sensor fabricated in a FET (GFET) configuration and its sensitivity towards ethanol and methane is reported. Detection of ethanol at the level of 100 ppm was observed under pulsed UV irradiation and after cleaning by UV light in the N2 ambient. Reduction of the frequency of UV irradiation pulses resulted in increased changes in sensor resistance in the presence of ethanol. Improved sensing behavior was ascribed...
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublikacjaThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Method of sacrificial anode dual transistor-driving in stray current field
PublikacjaIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
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Horizontally-split-drain MAGFET - a highly sensitive magnetic field sensor
PublikacjaWe propose a novel magnetic field sensitive semiconductor device, viz., Horizontally-Split-Drain Magnetic-Field Sensitive Field-Effect Transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and a Gradual Channel Detachment Effect (GCDE) and is very similar to that of Popovic and Baltes's SDMAGFET. The...
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Near Field Coupled Wireless Microwave Sensor
PublikacjaThis paper presents a wireless planar microwave sensor operating at industrial scientific and medical (ISM) frequency for the detection of dielectric materials. The microwave sensor consists of a reader (ground defected microstrip coupled line) and a passive tag where a complementary split-ring resonator (CSRR) is made on the commercially available copper-foil. The CSRR is a peel-off type tag that is excited using the near field...
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Organic filed effect transistor with zinc phthalocyanine.
PublikacjaW pracy przedstawiono wyniki badań doświadczalnych organicznego tranzystora polowego z warstwą ftalocyjaniny cynku. Jako podłoże zastosowano wysoko domieszkowane wafle krzemu pokryte warstwą tlenku krzemu (IV) o grubości 100 nm, na którą techniką fotolitograficzną była naniesiona struktura elektrod (tzw. geometria dolnych kontaktów). Złote elektrody źródła i drenu tworzyły kanał o długości 5 m (jest to odległość między elektrodą...
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Multiple sound sources localization in free field using acoustic vector sensor
PublikacjaMethod and preliminary results of multiple sound sources localization in free field using the acoustic vector sensor were presented in this study. Direction of arrival (DOA) for considered source was determined based on sound intensity method supported by Fourier analysis. Obtained spectrum components for considered signal allowed to determine the DOA value for the particular frequency independently. The accuracy of the developed...
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Measurements and Visualization of Sound Intensity Around the Human Head in Free Field Using Acoustic Vector Sensor
PublikacjaThis paper presents measurements and visualization of sound intensity around the human head simulator in a free field. A Cartesian robot, applied for precise positioning of the acoustic vector sensor, was used to measure sound intensity. Measurements were performed in a free field using a head and torso simulator and the setup consisting of four different loudspeaker configurations. The acoustic vector sensor was positioned around...
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Study of the effect of thermally reduced graphene oxide on the physical and mechanical properties of flexible polyurethane foams
PublikacjaFlexible polyurethane foams were obtained from a two-component system via the one-step method. The foams were modified with thermally reduced graphene oxide added in the amount equal to 0.25, 0.5 and 0.75 wt%. The morphology, static and dynamic properties, and thermal stability of modified foams were determined. The application of carbon filler resulted in the visible increase in the cell size, apparent density and rigidity of...
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Effect of graphene thickness on photocatalytic activity of TiO2-graphene nanocomposites
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