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Search results for: thin layers
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The AFM micrographs of vanadium oxides thin films deposited on quartz glass - the influence of the thickness of the thin film on its morphology
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a quartz glass substrate and were...
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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Optical transmission of the Niobium thin films
Open Research DataNiobium thin films with a thickness of 200nm were deposited n a Corning glass substrate by magnetron sputtering method. The optical transmission spectra in a visible light range were.recorded. Investigations showed a good optical transmission thru the layers for each samples, annealed at various temperatures. For measurements samples annealed at 500,...
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XRD data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe, annealed in a range from 400 to 900oC
Open Research DataDataset include collected XRD data of (Cr,Fe,Mn,Co,Ni)3O4 high-entropy spinel oxide thin films deposited by spray pyrolysis technique on amorphous SiO2 substrates and annealed from 400 to 900oC. Samples were prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers...
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XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
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XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
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SEM/EDX data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Data set include SEM and EDX results of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited layers were amorphous,...
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TEM data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Dataset include presentation of summarized TEM investigation of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited...
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Total electrical conductivity data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis dataset includes electrical conductivity measurements results measured by van der pauw technique up to 900oC.
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C dependent on film thickness
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (2-3 AsP layers) were deposited on a silicon substrate and were annealing at 1000°C under an argon...
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Structural investigations of the Al2O3 ultra thin films
Open Research DataUltra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2...
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TEM and EDX study of the Al2O3 ultra thin films
Open Research DataThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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Chemical investigation of the Al2O3 ultra-thin films
Open Research DataUltra-thin layers of oluminum oxide (Al2O3) were deposited by ALD method. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina...
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Hemocompatibility of nanocrystalline diamond layers
Open Research DataThe biocompatibility of the diamond films were investigated with whole human blood samples. Blood used in this study was drawn from 10 healthy human patients of different age, sex, and blood group. A 2 ml samples were collected into standard tubes with EDTA anticoagulation agent. Blood was used within 6 hours from the collection time. A reference blood...
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Simulation of perovskite-based CuI/CH3NH3PbI3/TiO2 solar cell performance
Open Research DataThe presented data set is part of the theoretical research on novel thin-layer lead-halide perovskite solar cells with different inorganic transparent conductive oxides used as charge transport layers. In this study CuI/CH3NH3PbI3/TiO2 model structure (Model 1) was investigated by the use of the SCAPS-1D simulation method (https://scaps.elis.ugent.be/).
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Simulation of perovskite-based CuI/CH3NH3PbI3/SnO2 solar cell performance
Open Research DataThe presented data set is part of the theoretical research on novel thin-layer lead-halide perovskite solar cells with different inorganic transparent conductive oxides used as charge transport layers. In this study CuI/CH3NH3PbI3/SnO2 model structure (Model 2) was investigated by the use of the SCAPS-1D simulation method (https://scaps.elis.ugent.be/).
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Simulation of perovskite-based CuI/CH3NH3PbI3/ZnO solar cell performance
Open Research DataThe presented data set is part of the theoretical research on novel thin-layer lead-halide perovskite solar cells with different inorganic transparent conductive oxides used as charge transport layers. In this study CuI/CH3NH3PbI3/ZnO model structure (Model 3) was investigated by the use of the SCAPS-1D simulation method (https://scaps.elis.ugent.be/).
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TEM imaging of Ag-Au nanoalloys
Open Research DataThe nanostructures of AuAg nanoalloys were prepared by sequential sputtering of metal thin layers (Au/Ag or Ag/Au) followed by annealing under 550 Celsius degree in an argon atmosphere. The basic single layer thickness was usually ca. 3 nm. For investigations two samples wih 50% Au and 50% Ag were selected and samples 1/3 Ag - 2/3 Au and 2/3 Ag - 1/3...
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Chemical analysis of the Au-Ag nanoaloys
Open Research DataThe nanostructures of AuAg nanoalloys were prepared by sequential sputtering of gold and silver thin films. Single layer thickness was usually 2.8 nm were deosted by magnetron sputtering method in a Ar plasma. As deposited layers were annealed in Ar atmosphere at 550 degress for 15 minutes. For XPS measurements five samples were selected: pure gold...