Search results for: semiconductor devices
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Noise in semiconductor devices
PublicationOmówiono typowe źródła szumów występujące w przyrządach pólprzewodnikowych, a mianowicie: cieplne, śrutowe, generacyjno-rekombinacyjne, 1/f, 1/f2, wybuchowe (RTS), lawinowe. Przedstawiono szumowe schematy zastępcze tranzystora bipolarnego, JFET i MOSFET oraz opisano wydajności poszczególnych źródeł szumów. Zasugerowano jak dobierać przyrządy półprzewodnikowe do małoszumowych układów w zakresie małych częstotliwości.
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A new nethod for RTS noise of semiconductor devices identification
PublicationIn the paper, a new method, called the noise scatterin pattern method (NSP method), for random telegraph signal noise identyfication in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are presented.
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Methodology of semiconductor devices classification into groups of differentiated quality
PublicationZaproponowano klasyfikację przyrządów półprzewodnikowych do grup o zróżnicowanej jakości na podstawie ich szumów własnych z zakresu małych częstotliwości. Przedstawiono metodologię umożliwiającą stwierdzenie, czy zaproponowany parametr szumowy X dla danego typu przyrządu półprzewodnikowego może być stosowany do określenia jakości. Sprecyzowano przebieg badań wstępnych bazujących na ocenie wyników pomiarów szumów własnych z zakresu...
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Identification of inherent noise components of semiconductor devices on an example of optocouplers
PublicationIn the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise...
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Semiconductor Devices
e-Learning Courseswesja angielskojęzyczna przedmiotu Przyrządy Półprzewodnikowe dla studentów z programu Erasmus
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A method of RTS noise identification in noise signals of semiconductor devices in the time domain
PublicationIn the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first)...
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Techniques of interference reduction in probe system for wafer level noise measurements of submicron semiconductor devices.
PublicationPrzedstawiono skrótowo system do ostrzowych pomiarów szumów struktur submikronowych. Znaczny wpływ na pomiary ostrzowe mają zakłócenia i szumy własne systemu, zwłaszcza zakłócenia o wysokim poziomie wpraowadzane przez ostrza (fluktuacje rezystancji styków ostrza do struktury powodowane przez wibracje i udary mechaniczne w środowisku pomiarowym)i środowisko elektromagnetyczne. Zakłócenia okresowe powodowane przez wibracje i pola...
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Microfluidic devices for photo-and spectroelectrochemical applications
PublicationThe review presents recent developments in electrochemical devices for photo- and spectroelectrochemical investigations, with the emphasis on miniaturization (i.e., nanointerdigitated complementary metal-oxide-semiconductor devices, micro- and nano-porous silicon membranes or microoptoelectromechanical systems), silica glass/microreactors (i.e., plasmonic, Raman spectroscopy or optical microcavities) or polymer-based devices (i.e.,...
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Edge-Guided Mode Performance and Applications in Nonreciprocal Millimeter-Wave Gyroelectric Components
PublicationThe analogies between the behavior of gyromagnetic and gyroelectric nonreciprocal structures, the use of the simple transfer matrix approach, and the edge-guided (EG) wave property, supported in a parallel plate model for integrated magnetized semiconductor waveguide, are investigated in those frequency regions, where the effective permittivity is negative or positive. As with their ferrite counterparts, the leakage of the EG waves...
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Integrated circuit structure surface images obtained with contact capacitive imaging technique
Open Research DataThe measurements were done using NTEGRA Prima (NT-MDT) device. CSG 10Pt probe.
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Real-time working gas recognition system based on the array of semiconductor gas sensors and portable computer Raspberry PI
PublicationThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and low-cost alternative for other devices, like gas analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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An automatic system for identification of random telegraph signal (RTS) noise in noise signals
PublicationIn the paper the automatic and universal system for identification of Random Telegraph Signal (RTS) noise as a non-Gaussian component of the inherent noise signal of semiconductor devices is presented. The system for data acquisition and processing is described. Histograms of the instantaneous values of the noise signals are calculated as the basis for analysis of the noise signal to determine the number of local maxima of histograms...
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Ryszard Jan Barczyński dr hab. inż.
PeopleRyszard Jan Barczyński (b. 24 June 1957 in Gdańsk), Polish scientist, engineer, a specialist in solid state physics and electronic measurement techniques. In 1976, he obtained a high school diploma in the IV High School Tadeusz Kosciuszko in Torun. Higher education he graduated in 1981 at the Institute of Physics, Technical University of Gdansk in specialty of solid state physics, obtaining master's degree in engineering. Since...
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The Methods for RTS Noise Identification
PublicationIn the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non-Gaussian components in the noise signal in a frequency domain.
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Piotr Płotka dr hab. inż.
PeoplePiotr Płotka received the M.Sc. and D.Eng. degrees in electronic engineering from the Gdansk University of Technology, Poland, in 1976 and 1985. In 2008 he received D.Sc. (Dr.Hab.) degree, also in electronic engineering, from the Institute of Electron Technology at Warsaw, Poland. From 1977 he was with Academy of Technology and Agriculture at Bydgoszcz, Poland and from 1981 with the Gdansk University of Technology. In cooperation...
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Horyzont energoelektroniczny obiektów morskich
PublicationW artykule zaprezentowano współczesne kierunki rozwoju energoelektroniki, w tym w szczególności dotyczące obiektów morskich. Przedstawiono podstawowe parametry aktualnie stosowanych w energoelektronice przyrządów półprzewodnikowych, jak również wykazano interdyscyplinarny charakter rozwoju tej dziedziny. Na przykładzie wybranych urządzeń energoelektronicznych przedstawiono ich komercyjne zastosowania oraz podział i miejsce w łańcuchu...
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Highly linear CMOS triode transconductor for VHF applications
PublicationA high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback...
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Electrical characterization of diamond/boron doped diamond nanostructures for use in harsh environment applications
PublicationThe polycrystalline boron doped diamond (BDD) shows stable electrical properties and high tolerance for harsh environments (e.g. high temperature or aggressive chemical compounds) comparing to other materials used in semiconductor devices. In this study authors have designed electronic devices fabricated from non-intentionally (NiD) films and highly boron doped diamond structures. Presented semiconductor devices consist of highly...
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Pracujący w czasie rzeczywistym system detekcji gazów wykorzystujący przenośny komputer Raspberry PI oraz matrycę półprzewodnikowych czujników gazu
PublicationThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and lowcost alternative for other devices, like gas‑analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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A calibration model for gas sensor array in varying environmental conditions
PublicationAbstract: Gas-analyzing systems based on gas sensors, commonly referred to as electronic noses, are the systems which enable the recognition of volatile compounds in their working environment and provide the on-line results of analysis. The most commonly used type of sensors in such systems is semiconductor gas sensors. They are considered to be the most reliable in the long-term applications (more than 1 year), however,...