Rok 2022

• EMI mitigation of GaN power inverter leg by local shielding techniques

  Publikacja

  • P. Derkacz
  • J. Schanen
  • P. Jeannin
  • P. Chrzan
  • P. Musznicki
  • M. Petit

  - IEEE TRANSACTIONS ON POWER ELECTRONICS - Rok 2022

  This paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...

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Rok 2021

• EMI attenuation in a DC-DC buck converter using GaN HEMT

  Publikacja

  • P. Derkacz (dawniej: P. B. Derkacz)
  • P. Musznicki
  • P. Chrzan

  - IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - Rok 2021

  A dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...

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• Wideband Modeling of DC-DC Buck Converter with GaN Transistors

  Publikacja

  • P. Musznicki
  • P. Derkacz (dawniej: P. B. Derkacz)
  • P. Chrzan

  - ENERGIES - Rok 2021

  The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...

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Rok 2020

• 3D PCB package for GaN inverter leg with low EMC feature

  Publikacja

  • P. Derkacz
  • P. Chrzan
  • P. Jeannin
  • P. Musznicki
  • M. Petit
  • J. Schanen

  - Rok 2020

  This paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...

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Rok 2019

• COMPARATIVE EVALUATION OF FERRITE SHIELDING DESIGNS IN INDUCTIVE POWER TRANSFER SYSTEMS

  Publikacja

  • B. Pakhaliuk
  • P. Derkacz

  - Rok 2019

  Wireless power transfer technology is becoming widespread in last few years. In comparison to conventional solutions this technology can significantly increase maintainability and safety of charging systems. From the other side there are list of factors that limit efficiency of wireless systems. One of them is low coupling between coils caused by comparably high leakage inductance in comparison to regular transformer.

• Gate Driver with Overcurrent Protection Circuit for GaN Transistors

  Publikacja

  • P. Derkacz
  • P. Musznicki

  - Przegląd Elektrotechniczny - Rok 2019

  The improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...

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