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Wyniki wyszukiwania dla: gan
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublikacjaAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublikacjaThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublikacjaThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublikacjaGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublikacjaW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublikacjaThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublikacjaWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublikacjaA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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3D PCB package for GaN inverter leg with low EMC feature
PublikacjaThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublikacjaThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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Low dark current metal-semiconductor-metal photodetectors fabricated on GaN
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublikacjaThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
PublikacjaPoly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters...
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
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The (de)biasing Effect of GAN-Based Augmentation Methods on Skin Lesion Images
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A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications
PublikacjaWe studied the electronic and magnetic properties of wurtzite GaN (w-GaN) doped with different concentrations of the 4d transition metal ions Nb, Mo, and Ru. We incorporated spin-polarized plane-wave density functional theory within an ultrasoft pseudopotential formalism. The 4d transition metals were doped at different geometrical sites to determine the geometry with the lowest total energy and the one that induced the largest...
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BADANIA EWALUACYJNE TRANZYSTORA 650 V E-HEMT GAN DO ZASTOSOWAŃW WYSOKOSPRAWNYCH PRZEKSZTAŁTNIKACH DC/DC
PublikacjaTematem artykułu są badania wysokonapięciowegotranzystora z azotku galu typu E-HEMT w aplikacji przekształtnikaobniżającego napięcie typu buck. W pracy przedstawiono krótkącharakterystykę i zalety półprzewodników szerokoprzerwowych,a także opis tranzystora GS66508P-E03 w obudowie do montażupowierzchniowego (SMD). Następnie poruszono problemchłodzenia łącznika mocy SMD i przeprowadzono badanieporównawcze dwóch układów chłodzenia....
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublikacjaA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Zhonghua gan zang bing za zhi = Zhonghua ganzangbing zazhi = Chinese journal of hepatology
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High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
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Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Dane BadawczeThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
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Artur Gańcza dr inż.
OsobyI received the M.Sc. degree from the Gdańsk University of Technology (GUT), Gdańsk, Poland, in 2019. I am currently a Ph.D. student at GUT, with the Department of Automatic Control, Faculty of Electronics, Telecommunications and Informatics. My professional interests include speech recognition, system identification, adaptive signal processing and linear algebra.
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A systematic approach to understand hydrogeochemical dynamics in large river systems: Development and application to the River Ganges (Ganga) in India
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Basal Ganglia
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Jakub Gańko Inżynier
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Maria Gańczak Prof. dr hab. med.
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Slavica Gandensia
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Thickness accuracy of sash gang sawing
PublikacjaThin lamellae, corresponding to the layer components of structural glued members, i.e. 2-ply or 3-ply glued parquet, can be manufactured in re-sawing operations of kiln-dried wood blocks. These must be prepared with high dimensional accuracy and adequate surface quality following specific technical requirements for lamellae thickness variations, especially in the upper layers of the glued composite parquet. The accuracy of oak...
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Gangs in the Global City: Alternatives to Traditional Criminology
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Journal of Gang Research
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An assessment of teeth quality of the mini gang saw blade
PublikacjaIn this work, the assessment of the effect of the operating time (90 min.) of the mini gang saw blades during sawing Scotch pine (Pinus sylvestris L.) samples upon changes of the saw blade teeth sharpness (bluntness), which was defined as an effective radius of the nose ρ , has been described. The research activities have been carried out on the Nikon Ti-S optical microscope equipped with the Nikon DS-30W camera allowing high-speed...
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Mycosis fungoides with a dramatic course in a patient with a history of pyoderma gangrenosum – a case report
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Studia Germanica Gandensia
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Synthesis and Biological Activity of Strongly Fluorescent Tricyclic Analogues of Acyclovir and Ganciclovir
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Fluorescent Tricyclic Analogues of Acyclovir and Ganciclovir. A Structure−Antiviral Activity Study
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The ChoCO-W prospective observational global study: Does COVID-19 increase gangrenous cholecystitis?
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Recovering Evaluation of Narrow-Kerf Teeth of Mini Sash Gang Saws
PublikacjaSash gang saws with narrow-kerf saw blades are used in the production of glued laminate flooring elements in plants where dry technology is applied. This means that boards or friezes are sawn into top layer lamellae in dry conditions (moisture content of about 10–12%) from expensive wood species, often exotic. The object of this research was stellite-tipped teeth of narrow kerf saw blades sharpened under industrial conditions....
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Schweizerische Zeitschrift fuer Ganzheitsmedizin
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Zeitschrift fuer Ganzheitliche Tiermedizin
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Biological study on carboxymethylated (1→3)-α-d-glucans from fruiting bodies of Ganoderma lucidum
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A design proposal of driving system for roof segments and gantry crane of ecological floating dock
PublikacjaW pracy przedstawiono propozycję napędu segmentów przesuwnego zadaszenia oraz suwnicy ekologicznego doku pływającego. Proponowany układ napędowy oparto na zastosowaniu elektrycznych silników asynchronicznych z zewnętrznym sterowaniem częstotliwościowym prędkości obrotowej.
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Determination of rectification corrections for semi gantry crane rail axes in the local 3D coordinate system
PublikacjaElectronic tacheometers are currently the standard instruments used in geodetic work, including also geodetic engineering measurements. The main advantage connected with this equipment is among others high accuracy of the measurement and thus high accuracy of the final determinations represented for example by the points’ coordinates. One of many applications of the tacheometers is the measurement of crane rail axes. This measurement...
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Conception of on-line lamella´s thickness monitoring system for resawing process on sash-gangs saw
PublikacjaPrzedstawiono układ do automatycznego pomiaru grubości lameli po cięciu na pilarkach ramowych. Pomiar odbywa się metodą bezstykową za pomocą ultra precyzyjnych laserowych sensorów przemieszczeń. Sygnały z sensorów po obrobieniu za pomocą specjalnego oprogramowania były podstawą do oceny jakości wykonania lameli. Próby cięcia wykonano na pilarce ramowej PRW15M na Politechnice Gdańskiej, a pomiary na Shimane University w Matsue (Japonia)....
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The consideration to the dynamic systems parameter identification
PublikacjaIn this paper, a concept for continuous-time dynamic systems parameter identification using modulating function approach is presented. It refers to linear as well as selected non-linear systems. It shows the possibility of direct application without converting differential equation. In particular cases direct application can decrease the amount of computation in non-linear system identification, which generally requires Fourier...
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Book review: John M Hagedorn (ed.), Gangs in the Global City: Alternatives to Traditional CriminologyHagedornJohn M (ed.), Gangs in the Global City: Alternatives to Traditional Criminology, University of Illinois Press: Urbana, 2007; 320 pp.: ISBN 9780252073373, US$28.00
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Modelling of Ship’s Heeling and Rolling for the Purpose of Gantry Control Improvement in the Course of Cargo Handling Operations in Sea Ports
PublikacjaThe paper presents two proposals of models of interaction between a ship and cargo being loaded or discharged by a gantry in port, in terms of heeling and rolling of the vessel. The main purpose of such modelling is the need for improvement of gantry control with regard to faster operations thanks to more accurate estimation of level and moment of cargo release from a gantry hook or spreader. The study may be the contribution to...
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Contrasting effects of biochar and hydrothermally treated coal gangue on leachability, bioavailability, speciation and accumulation of heavy metals by rapeseed in copper mine tailings
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Ryzyko etyczne w procesie wytwarzania oprogramowania [online]
PublikacjaW artykule rozpatrywane są współczesne problemy wytwarzania oprogramowania. Jednym z możliwych sposobów ich rozwiązywania jest uwzględnienie w procesie wytwarzania zagadnień ryzyka etycznego, rozumianego jako zagrożenia, jakie dla sukcesu przedsięwzięcia stwarzają problemy etyki podejmowanych decyzji, odstępstwa od obowiązującego prawa, uwarunkowań polityki prowadzenia projektu, wpływu projektu na ludzi, biorących w nim udział...
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Ryzyko etyczne w procesie wytwarzania oprogramowania
PublikacjaPraca rozpatruje współczesne problemy wytwarzania oprogramowania. Jednym zesposobów ich rozwiązywania jest uwzględnienie zagadnien ryzyka etycznego, rozumianego jako zagrożenia, jakie dla sukcesu przedsięwzięcia stwarzają problemy etyki podejmowanych decyzji, odstępstwa od obowiązującego prawa, uwarunkowań polityki projektu, wpływu projektu na ludzi biorących w nim u- dział i otaczających go. Autorzy przytaczają niektóre...