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Wyniki wyszukiwania dla: atomic layer deposition
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Titania Nanotubes/Hydroxyapatite Nanocomposites Produced with the Use of the Atomic Layer Deposition Technique: Estimation of Bioactivity and Nanomechanical Properties
PublikacjaTitanium dioxide nanotubes/hydroxyapatite nanocomposites were produced on a titanium alloy (Ti6Al4V/TNT/HA) and studied as a biocompatible coating for an implant surface modification. As a novel approach for this type of nanocomposite fabrication, the atomic layer deposition (ALD) method with an extremely low number of cycles was used to enrich titania nanotubes (TNT) with a very thin hydroxyapatite coating. X-ray diffraction (XRD)...
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The impact of atomic layer deposition technological parameters on optical properties and morphology of Al 2 O 3 thin films
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Spectral reflectance modeling of ZnO layers made with Atomic Layer Deposition for application in optical fiber Fabry-Perot interferometric sensors
PublikacjaSuitability of zinc oxide (ZnO) layers grown using Atomic Layer Deposition for operation in optical-fiber extrinsic Fabry-Perot sensors is investigated using a numerical model. Reflectance spectra obtained using the developed model indicate that the application of these layers in optical-fiber extrinsic Fabry-Perot sensors is difficult as it may require a source whose spectrum width is about 300 nm. A series of ZnO layers grown...
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Thin Layer Deposition Methods in Solid Oxide Fuel Cell Technology
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Electrophoretic Deposition and Characteristics of Chitosan–Nanosilver Composite Coatings on a Nanotubular TiO2 Layer
PublikacjaThe surface treatment of titanium implants has been applied mainly to increase surface bioactivity and, more recently, to introduce antibacterial properties. To this end, composite coatings have been investigated, particularly those based on hydroxyapatite. The present research was aimed at the development of another coating type, chitosan–nanosilver, deposited on a Ti13Zr13Nb alloy. The research comprised characterization of the...
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Surface characteristics of glass fibres covered with an aluminum layer after a chemical modification process using secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM)
PublikacjaPrzedstawiono wyniki z badań powierzchni modyfikowanych włókien szklanych (przed i po procesie chemicznej modyfikacji ich powierzchni), które są kandydatem na przyszły oryginalny bezmatrycowy materiał odniesienia lotnych analitów etenu (C2H4) metodami spektrometrii mas jonów wtórnych oraz mikroskopii sił atomowych. Badania miały na celu obserwację zmian oraz procesów, jakie zaszły na powierzchni włókien szklanych pokrytych...
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Structural investigations of the Al2O3 ultra thin films
Dane BadawczeUltra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2...
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TEM and EDX study of the Al2O3 ultra thin films
Dane BadawczeThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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Application of boron-doped diamond film and ZnO layer in the Fabry-Pérot interferometer
PublikacjaIn this article there have been presented the use of boron-doped diamond films for sensor applications. The low-finesse Fabry-Pérot interferometer working in the reflective mode has been implemented. Two kinds of reflective layers have been elaborated: boron-doped diamond thin films and zinc-oxide (ZnO) layer. Thin ZnO layers were deposited by Atomic Layer Deposition (ALD) on the face of a standard telecommunication single-mode...
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Depth profile of the composition of 8 nm Al2O3 thin film
Dane Badawcze8 nm layer of aluminum oxide (Al2O3) was deposited by ALD method on a s. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. To investigate the profile of concenration of...