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Search results for: polycrystalline diamond
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Local impedance imaging of boron-doped polycrystalline diamond thin films
PublicationLocal impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 1016 to 2 × 1021 atoms cm−3. The BDD films displayed microcrystalline structure,...
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Local impedance imaging of boron-doped polycrystalline diamond thin films
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Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films
PublicationThe undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped...
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Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio
PublicationThe influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation....
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Heterogeneous distribution of surface electrochemical activity in polycrystalline highly boron-doped diamond electrodes under deep anodic polarization
PublicationThe surface homogeneity of boron-doped diamond electrodes is variable and depends on anodic polarization conditions. The differentiation factor is the gradual and localized change in surface termination. A series of measurements under different polarization conditions was performed in order to investigate the scale of this effect. Nanoscale impedance microscopy (NIM) revealed large variation of surface resistance in individual...
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Optical and structural properties of polycrystalline CVD diamond films grown on fused silica optical fibres pre-treated by high-power sonication seeding
PublicationIn this paper, the growth of polycrystalline chemical vapour deposition (CVD) diamond thin films on fused silica optical fibres has been investigated. The research results show that the effective substrate seeding process can lower defect nucleation, and it simultaneously increases surface encapsulation. However, the growth process on glass requires high seeding density. The effects of suspension type and ultrasonic power were...
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Multifrequency Nanoscale Impedance Microscopy (m-NIM): A novel approach towards detection of selective and subtle modifications on the surface of polycrystalline boron-doped diamond electrodes
PublicationIn this paper, we describe the modification of Nanoscale Impedance Microscopy (NIM), namely, a combination of contact-mode atomic force microscopy with local impedance measurements. The postulated approach is based on the application of multifrequency voltage perturbation instead of standard frequency-by-frequency analysis, which among others offers more time-efficient and accurate determination of the resultant impedance spectra...
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Al-DIAMOND SCHOTTKY TUNNEL DIODES WITH BARRIER HEIGHT CONTROL
PublicationFew-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff...
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In-situ optical diagnostics of boron-doped diamond films growth
PublicationInterferometry is a desirable method for in-situ measurement of thin, dielectric film growth, as it don't modify conditions of film deposition. Here we present interferometrical measurements of thickness of doped diamond films during Chemical Vapor Deposition (CVD) process. For this purpose we used a semiconductor laser with a 405nm wavelength. Additional ex-situ measurement using spectral interferometry and ellipsometry...
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Electrical characterization of diamond/boron doped diamond nanostructures for use in harsh environment applications
PublicationThe polycrystalline boron doped diamond (BDD) shows stable electrical properties and high tolerance for harsh environments (e.g. high temperature or aggressive chemical compounds) comparing to other materials used in semiconductor devices. In this study authors have designed electronic devices fabricated from non-intentionally (NiD) films and highly boron doped diamond structures. Presented semiconductor devices consist of highly...
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Structural and electrochemical heterogeneities of boron-doped diamond surfaces
PublicationThis brief review is focussed on the recent progress in studies of the heterogeneous electrochemical behaviour of various boron-doped materials extending from zero-dimensional particles through polycrystalline or nanostructured three-dimensional surfaces. A boron-doped diamond reveals large heterogeneities induced by numerous factors, inter alia multi-faceted crystallinity, inhomogeneous boron concentration, sp2/sp3-carbon ratio,...
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Gas Composition Influence on the Properties of Boron-Doped Diamond Films Deposited on the Fused Silica
PublicationThe main subject of this study are molecular structures and optical properties of boron-doped diamond films with [B]/[C] ppm ratio between 1000 and 10 000, fabricated in two molar ratios of CH 4 -H 2 mixture (1 % and 4 %). Boron-doped diamond (BDD) film on the fused silica was presented as a conductive coating for optical and electronic purposes. The scanning electron microscopy images showed homogenous and polycrystalline surface...
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Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica
PublicationA conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters...
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Novel Functionalization of Boron-Doped Diamond by Microwave Pulsed-Plasma Polymerized Allylamine Film
PublicationWe report the novel modification of a hydrogen-terminated polycrystalline boron-doped electrode with a microwave pulsed-plasma polymerized allylamine. Boron-doped diamond (BDD) was coated with a very thin layer of adherent cross-linked, pinhole- and additive-free allylamine plasma polymer (PPAAm) resistant to hydrolysis and delamination and characterized by a high density of positively charged amino groups. The pulsed microwave...
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Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry
PublicationPolycrystalline boron-doped diamond is a promising material for high-power aqueous electrochemical applications in bioanalytics, catalysis, and energy storage. The chemical vapor deposition (CVD) process of diamond forma-tion and doping is totally diversified by using high kinetic energies of deu-terium substituting habitually applied hydrogen. The high concentration of deuterium in plasma induces atomic arrangements and steric...
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Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates
PublicationThis paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density....
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Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates
PublicationFabrication process of optically transparent boron nanocrystalline diamond (BNCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 ºC. A homogenous, continuous and polycrystalline surface morphology with high sp3 content in B-NCD films and film thickness depending from substrate...
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Direct amination of boron-doped diamond by plasma polymerized allylamine film
PublicationA novel microwave pulsed-plasma based method for the modification of the hydrogen-terminated polycrystalline boron-doped diamond (BDD) with a thin film of polymerized allylamine (PPAAm) is reported. A modified BDD surface is resistant to hydrolysis and delamination and is characterized by a high density of positively charged amino groups. Pulsed microwave plasma was applied to improve the degree of cross-linking and bonding of...
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Spatial characterization of H 2: CH 4 dissociation level in microwave ECR plasma source by fibre-optic OES
PublicationSpatially resolved optical emission spectroscopy (SR-OES) was used to investigate microwave activated H2/Ar/CH4 plasma under conditions of the electron cyclotron resonance (ECR). The chemistry and composition of the gas phase were studied using self-designed fibre-optic system with echelle type spectrometer during CVD deposition of polycrystalline diamond. One-dimensional intensity profiles of the main species were collected along...
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Nanocrystalline diamond microelectrode on fused silica optical fibers for electrochemical and optical sensing
PublicationFabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrode on fused silica single mode optical fiber has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ºC. We have obtained homogenous, continuous and polycrystalline surface morphology with the mean grain size in the range of 100-250...
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Heterogeneous oxidation of highly boron-doped diamond electrodes and its influence on the surface distribution of electrochemical activity
PublicationThe electrochemical active surface area (EASA) of polycrystalline boron-doped diamond (BDD) electrodes is heterogeneous and can be affected by numerous factors. There is a strong need for proper consideration of BDD heterogeneity in order to improve this material's range of application in electrochemistry. Localized changes in surface termination due to the influence of oxidation agent result in increased surface resistance. The...
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Opto-Electrochemical Sensing Device Based on Long-Period Grating Coated with Boron-Doped Diamond Thin Film
PublicationThe fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ºC. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp3 content in B-NCD...
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Pressure effects on the superconductivity of the HfPd2Al Heusler compound: Experimental and theoretical study
PublicationPolycrystalline HfPd2Al has been synthesized using the arc-melting method and studied under ambient-pressure conditions by x-ray diffraction from room temperature up to 450 °C. High-pressure x-ray diffraction up to 23 GPa was also performed using Diacell-type membrane diamond anvil cells. The estimated linear thermal expansion coefficient was found to be α=1.40(3)×10−5K−1, and the bulk modulus derived from the fit to the third-order...
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Structural, optical and electrochemical performance of black phosphorus and black arsenic-phosphorus nanostructures
PublicationBlack phosphorus (BP)-based nanostructures have drawn a lot of attention due to their tunable bandgap and extraordinary properties such as: high surface-to-volume ratio, large number of active sites, and prominent edges. However, low dimensional structures of black phosphorus oxidize easily, which hamper their application on a broader scale. One way to overcome these difficulties is to modify the black phosphorus structure by substituting...