Search results for: semiconductor devices
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A calibration model for gas sensor array in varying environmental conditions
PublicationAbstract: Gas-analyzing systems based on gas sensors, commonly referred to as electronic noses, are the systems which enable the recognition of volatile compounds in their working environment and provide the on-line results of analysis. The most commonly used type of sensors in such systems is semiconductor gas sensors. They are considered to be the most reliable in the long-term applications (more than 1 year), however,...
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Detection of gaseous compounds with different techniques
PublicationSensing technology has been developed for detection of gases in some environmental, industrial, medical, and scientific applications. The main tasks of these works is to enhance performance of gas sensors taking into account their different applicability and scenarios of operation. This paper presents the descriptions, comparison and recent progress in some existing gas sensing technologies. Detailed introduction to optical sensing...
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Photovoltaic effect in the single-junction DBP/PTCBI organic system under low intensity of monochromatic light
PublicationPhotoelectric properties of the planar ITO/MoO3/DBP/PTCBI/BCP/Ag system were characterized on the basis of short-circuit current, open-circuit voltage and absorption spectra, and current-voltage measurements in the dark and under monochromatic illumination of low intensity. Photovoltaic performance of the system was compared with the performance of ideal semiconductor and excitonic cells of chosen bandgaps. Such analysis shows,...
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Compensation Topologies in IPT Systems: Standards, Requirements, Classification, Analysis, Comparison and Application
PublicationWireless power transfer devices are becoming more relevant and widespread. Therefore, an article is devoted to a review, analysis and comparison of compensation topologies for an inductive power transfer. A new classification of topologies is developed. A lot of attention is paid to the problems of the physical fundamentals of compensation work, standards, safety, and five main topology requirements. It is determined, that topologies...
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FFT analysis of temperature modulated semiconductor gas sensor response for the prediction of ammonia concentration under humidity interference
PublicationThe increasing environmental contamination forces the need to design reliable devices for detecting of the volatile compounds present in the air. For this purpose semiconductor gas sensors, which have been widely used for years, are often utilized. Although they have many advantages such as low price and quite long life time, they still lack of long term stability and selectivity. Namely, environmental conditions have significant...
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Implementation of constant component filter in measurements of random telegraph signal noise
PublicationNoise is generated in all semiconductor devices. The intensity of these fluctuations depends on used elements, manufacturing process, operating conditions and device type. The result noise is a superposition of different kinds of fluctuations like thermal noise, generation-recombination noise, 1/f noise, shot noise and Random Telegraph Signal (RTS) noise. The last one, RTS noise is observed as nonstationary impulse fluctuations....
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Photosensitization of TiO2 and SnO2 by Artificial Self-Assembling Mimics of the Natural Chlorosomal Bacteriochlorophylls
PublicationOf all known photosynthetic organisms, the green sulfur bacteria are able to survive under the lowest illumination conditions due to highly efficient photon management and exciton transport enabled by their special organelles, the chlorosomes, which consist mainly of self-assembled bacteriochlorophyll c, d, or e molecules. A challenging task is to mimic the principle of self-assembling chromophores in artificial light-harvesting...
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Charakterystyka tranzystorów z węglika krzemu w wysokosprawnych przekształtnikach
PublicationPółprzewodnikowe przyrządy mocy z węglika krzemu (SiC) osiągnęły poziom technologiczny umożliwiający powszechne stosowanie w układach przekształtnikowych. W artykule omówiono ostatnie osiągnięcia dotyczące układów przekształtnikowych z przyrządami z węglika krzemu oraz wybrane wyniki badań realizowane na Politechnice Gdańskiej. W artykule opisano właściwości statyczne i dynamiczne tranzystorów MOSFET i JFET z węglika krzemu oraz...
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Structural and electronic properties of diamond-composed heterostructures
PublicationDiamond is a promising material for 21st century electronics due to its high thermal and electronic conductivity, biocompatibility, chemical stability, high wear resistance, and possibility of doping. However, the semiconductor properties of diamond, especially free-standing films, have not been fully explored. Nor have their integration with polymers and fragile materials and their applications as electronic components. In this...
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Impact of dyes isomerization effect on the charge transfer phenomenon occurring on the dye/nanosemiconductor interface
PublicationThe present work aimed to find the answer how does the isomerization of the Ru based dyes affect the overall photon-to-current efficiency of the DSSCs and to explain the charge transfer phenomenon occurring on the dye/ nanosemiconductor interface. Therefore, electronic and optical properties of three bipyridine derivatives anchored on the TiO2 electrode were investigated by computational simulations based on quantum chemistry codes...
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The importance of anchoring ligands of binuclear sensitizers on electron transfer processes and photovoltaic action in dye-sensitized solar cells
PublicationThe relatively low photon-to-current conversion efficiency of dye-sensitized solar cells is their major drawback limiting widespread application. Light harvesting, followed by a series of electron transfer processes, is the critical step in photocurrent generation. An in-depth understanding and fine optimization of those processes are crucial to enhance cell performance. In this work, we synthesize two new bi-ruthenium sensitizers...
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Fault detection in electronic circuits using test buses
PublicationA survey of test buses designed for diagnostics of digital and analog electronic circuits is presented: the IEEE 1149.1 bus for digital circuits, the IEEE 1149.4 bus for mixed-signal and the IEEE 1149.6 bus for AC coupled complex digital circuits. Each bus is presented with its structure, solution of key elements, particularly boundary registers and a set of test instructions. Diagnosis with the use of the described buses is...
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SiC-Based Power Electronic Traction Transformer (PETT) for 3 kV DC Rail Traction
PublicationThe design of rolling stock plays a key role in the attractiveness of the rail transport. Train design must strictly meet the requirements of rail operators to ensure high quality and cost-eective services. Semiconductor power devices made from silicon carbide (SiC) have reached a level of technology enabling their widespread use in traction power converters. SiC transistors oering energy savings, quieter operation, improved reliability...
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The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
PublicationIn this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase....
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Dual Active Bridge (DAB) DC-DC converter for multilevel propulsion converters for electrical multiple units (EMU)
PublicationSemiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling their widespread use in power converters. Two different approaches to implementation of modern traction converters in electric multiple units (EMU) have been presented in recent years: (i) 3.3-kV SiC MOSFET-based three-level PWM inverter with regenerative braking and (ii) 6.5-kV IGBT-based four-quadrant power electronic traction transformer...
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GAS SENSORS WITH TEMPERATURE MODULATION – AN OVERVIEW
PublicationAlthough different methods of improving semiconductor gas sensor properties have been proposed, a technique involving temperature modulation seems to be the most promising. Semiconductor gas sensors working with modulated temperature can be more stable and are more selective comparing with sensor working at one temperature. In this paper, various approaches to temperature modulation are reviewed.
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Medium-Voltage Drives: Challenges and existing technology
PublicationThe article presents an overview of state-of-art solutions, advances, and design and research trends in medium-voltage (MV) drive technologies - and also discusses the challenges and requirements associated with the use of such drives. The choice and deployment of MV drives in industries are associated with numerous requirements related to the front-end converter (grid side) and inverter (machine side). The focus is on solutions...
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Al-DIAMOND SCHOTTKY TUNNEL DIODES WITH BARRIER HEIGHT CONTROL
PublicationFew-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff...
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Wavelet Transform Analysis of Temperature Modulated Gas Sensor Response
PublicationThe aim of the study was to evaluate whether it is possible to extract the information about the gas concentration despite the influence of humidity. Commercial semiconductor sensor response was examined under the application of a periodic temperature change. The data was collected using measurement protocol for different concentrations of ammonia at specified levels of relative humidity. In this work we focused on the evaluation...
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Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model
PublicationThis article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore–Gibson–Thompson (MGT) equation of the fourth-order serves as the theoretical framework...