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Search results for: A-C:H FILMS
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XRD investigations of the lithium titanate thin films
Open Research DataNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing temperature on as-prepared films crystallization, the coatings were heated at temperature from 500 °C up to 600 °C for 20h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible...
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Optical measurements of lithium titanate sol-gel derived thin films
Open Research DataNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin...
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The assessment of microbiological antimicrobial properties of PE film loaded with nanozinc filler
Open Research DataThe dataset contains the results of a single series of determinations of the antimicrobial properties against E. coli and S. aureus of polyethylene films containing the nanozinc filler.
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The AFM micrographs of vanadium oxides thin films obtained at 800°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on a silicon substrate and vanadium thin films were obtained by annealing as-prepared films at...
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The AFM micrographs of vanadium oxides thin films obtained at 1200°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 400°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 600°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of of vanadium oxides thin films obtained at 300°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxide thin films obtained at 100°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 150°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 200°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 450°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
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XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films were deposited on a silicon and quartz glass substrate and were annealing at 1000°C under an argon atmosphere.
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C dependent on film thickness
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (2-3 AsP layers) were deposited on a silicon substrate and were annealing at 1000°C under an argon...
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Luminescence properties of TeOx-Eu thin films
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Tb thin films
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Dy thin films
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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Luminescence properties of TeOx thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised...
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Luminescence properties of TeOx-Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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Luminescence properties of TeOx-Tb thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Eu thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Fourier transform infrared spectroscopy (FTIR) of pre- PXBS (0 h) and PXBS during the crosslinking process (24 h–288 h)
Open Research DataThe goal of this research was developing biodegradable and biocompatibile xylitol-based copolymers with improved mechanical properties, and investigating the change in their thermal and chemical properties withprogress of the cross-linking process. Using a raw material of natural origin such as xylitol, a prepolymer wasobtained by esterification and...
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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XRD and electrochemical results for MoO3 films deposited using pulsed laser deposition system
Open Research DataThe attached data contains XRD and electrochemical results for MoO3 films deposited on fluorine-doped tin oxide glasses. Films were deposited using a pulsed laser deposition system at different conditions. Part of the samples was deposited at room temperature and then annealed at 575°C for given times (samples labeled PLD_RT_575C_xmin, where x stands...
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Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Tm thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Tm thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Luminescence properties of TeOx-1%Eu1.5%Tb2.5%Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-1%Eu1.5%Tb2.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
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Luminescence of TeO2:Eu thin films
Open Research DataTellurium dioxide doped by europium thin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was...
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SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
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Morphology of the sol-gel derived LTO:Cu films
Open Research DataMorphology of the lithium titanate doped by Cu thin films were investigated by SEM microscope. Films were deposited by spin-coater from sol-gel derived sol. SEM images showed a high porous structure, tipaciall for sol-gel based films. For measurements samples with a various content of Cu were selected.
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The AFM micrographs of vanadium oxides thin films deposited on quartz glass - the influence of the thickness of the thin film on its morphology
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a quartz glass substrate and were...
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XRD analysis of the tellurium dioxide thin films
Open Research DataTellurium dioxide thin films were deposited by magnetron sputtering method. The XRD analysis of the films annealed at 200, 500, 650 and 700 celsius degree showed appearing of crystalline phase in a higher temeratures.
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Analysis of the electrical parameters of the LTO thin films
Open Research DataLithium titanate thin films were derived by sol-gel technique. Films with thickness ca. 800 nm were annealed for various time, in a range of 10h-80h at 550 deg. Electrical conductivity in a wide range of temperature was measured.
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Electrical measurements of the dewetting of metal thin films
Open Research DataIn situ observations of dewetting of thin films is very complicated. One of the method, that helps to observe it, could be electrical measurements. For experiments, thin gold, silver and gold-silver nanoalloy films were deposited by magnetron sputtering method. Films were deposited on a Corning glass substrates. Samples were measured by four point method...
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Dewetting of silver films detected by XPS method
Open Research DataDewetting of silver thin films was detected by XPS method. Thin metallic films were deposited by magnetron sputtering method. Formation of nanostructures , as a result of thermal annealing, was confirmed by SEM microscope. For comparision three samples were measured. Bulg gold, as-deposited silver film with thickness of 3 nm and nanostructures.
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Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method
Open Research DataThin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...
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Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
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SEM images of dewetted gold films
Open Research DataGold nanostructures were prepared on silicon - Si(111) as a substrate. as a result of dewetting process. Thin golds films were deposited using a table-top dc magnetron sputtering coater under pure Ar plasma conditions . The Au target had 99.99% purity, the rate of Au layer deposition was about 0.4 nm·s−1 and the incident power was 32 W. The thickness...
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Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
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Chemical investigations of the MoO3 doped by K films deposited FTO
Open Research DataMoO3 thin films were synthesized via thermal annealing of thin, metallic Mo films deposited onto the FTO substrate using a magnetron sputtering system. The influence of photointercalation of alkali metal cation (K+) into the MoO3 structure on the photoelectrochemical properties of the molybdenum trioxide films was investigated. The chemical characterisation...
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XRD patterns of V2O5 thin films deposited on silicon substrate
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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Electrical responses of nanoporous NiO films for light-activated nitrogen dioxide and acetone gas sensing
Open Research DataThe chemoresistive sensor response of nanoporous NiO films prepared by advanced gas deposition was investigated with and without simultaneous light irradiation, to detect nitrogen dioxide and acetone gases. The presented data show electrical responses presented as sensor resistance or relative changes in sensor resistance under selected environment...
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Structural analysis of the tellurium dioxide thin films
Open Research DataTeO2 thin films were deposited by magnetron sputtering method. After deposition, amorphous samples were annealed at various temperatures. Influence of annealing temperature on a presence of crystalline phase was investigated.
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XRD patterns of V2O5 thin films deposited on quartz glass
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the structure of the films dependent on the annealing temperature.
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Optical transmission of the Niobium thin films
Open Research DataNiobium thin films with a thickness of 200nm were deposited n a Corning glass substrate by magnetron sputtering method. The optical transmission spectra in a visible light range were.recorded. Investigations showed a good optical transmission thru the layers for each samples, annealed at various temperatures. For measurements samples annealed at 500,...