Filters
total: 14438
-
Catalog
- Publications 12271 available results
- Journals 265 available results
- Conferences 41 available results
- Publishing Houses 2 available results
- People 404 available results
- Inventions 1 available results
- Projects 20 available results
- Laboratories 1 available results
- Research Equipment 8 available results
- e-Learning Courses 213 available results
- Events 36 available results
- Offers 1 available results
- Open Research Data 1175 available results
displaying 1000 best results Help
Search results for: INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) , MODELING , PIECEWISE LINEAR ELECTRICAL CIRCUIT SIMULATION (PLECS) , POWER TRANSISTORS , SELF-HEATING , THERMAL MODEL
-
Accurate Computation of IGBT Junction Temperature in PLECS
PublicationIn the article, a new method to improve the accuracy of the insulated-gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is...
-
Nonlinear Control of a Doubly Fed Generator Supplied by a Current Source Inverter
PublicationNowadays, wind turbines based on a doubly fed induction generator (DFIG) are a commonly used solution in the wind industry. The standard converter topology used in these systems is the voltage source inverter (VSI). The use of reverse-blocking insulated gate bipolar transistor (RB-IGBT) in the current source inverter topology (CSI), which is an alternative topology, opens new possibilities of control methods. This paper presents...
-
Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
-
Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublicationW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
-
Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
-
Accurate electrothermal modelling of high frequency DC-DC converters with discrete IGBTs in PLECS software
PublicationIn the paper, a novel, improved method of the IGBT junction temperature computations in the PLECS simulation software is presented. The developed method aims at accuracy of the junction temperature computations in PLECS by utilising a more sophisticated model of transistor losses, and by taking into account variability of transistor thermal resistance as a function of its temperature. A detailed description of the proposed method,...
-
Michał Michna dr hab. inż.
PeopleMichal Michna received the M.Sc. and Ph.D. degrees in electrical engineering from the Gdansk University of Technology (GUT), Gdansk, Poland, in 1998 and 2005, respectively. Since 2004, he was employed at the Department of Power Electronics and Electrical Machines of the Gdańsk University of Technology (assistant, assistant professor, senior lecturer). In 2010-2015 he was a deputy of head of the Department of Power Electronics and...
-
Non-linear circuit model of a single doubly-fed induction machine formulated in natural axes for drive systems simulation purposes
PublicationMathematical modelling and a circuit model formulated in natural axes of a single doubly-fed induction machine, with the account of magnetic circuit nonlinearity are presented in the paper. Derivation of the model differential equations was based on Lagrange's energy method. State functions of magnetic elements in the model are non-linear and depend on all currents flowing in the machine windings and on the angle of rotor position....
-
Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
-
Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
-
Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
-
Behawioralny model tranzystora IGBT
PublicationW artykule przedstawiono rezultaty prac nad uniwersalnym modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania stanów ustalonych i dynamicznych. Rozważono behawioralny model IGBT w układzie klasycznym z nieliniowymi aproksymacjami pojemności pasożytniczych. Eksperymentalne testy modelu modułu IGBT typu CM200DY-24A (Mitsubishi) przeprowadzono w...
-
Conducted emi identification in power electronic converters : modeling of EMI generation and propagation using circuit simulation and wiener filtering methods.
PublicationThis work presents the circuit simulations and the conventional signal processing technique (Wiener filtering) in order to reconstruct conducted ElectroMagnetic Interferences (EMI), generated and propagated in power electronics converters. In the simulation study, the most accurate presently available models of components of circuit have been used and improved. The proposed Wiener filtering method allows to identifying the transfer...
-
The PWM current source inverter with IGBT transistors and multiscalar model control system
PublicationW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
-
Jarosław Guziński prof. dr hab. inż.
PeopleJaroslaw Guzinski received M.Sc., Ph.D. and D.Sc. degrees from the Electrical Engineering Department at Technical University of Gdansk, Poland in 1994, 2000 and 2011 respectively. Since 2016 he is Associate Professor at Gdansk University of Technology. Currently he is the head of the Department of Electric Drives and Energy Conversion. From 2006 to 2009 he was involved in European Commission Project PREMAID Marie Curie, ‘Predictive...
-
The behavioural model of graphene field-effect transistor
PublicationThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
-
Robert Bogdanowicz dr hab. inż.
PeopleRobert Bogdanowicz received his Ph.D. degree with honours in Electronics from the Gdansk University of Technology. He worked as a post-doc researcher in Ernst-Moritz-Arndt-Universität Greifswald Institut für Physik. He has initiated optical emission imaging of muti-magnetron pulsed plasma and contributed to the development of antibacterial implant coatings deposited by high-power impulse magnetron sputtering. He moved back to...
-
A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublicationThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
-
A NUMERICAL STUDY ON THE DYNAMICS OF DENGUE DISEASE MODEL WITH FRACTIONAL PIECEWISE DERIVATIVE
PublicationThe aim of this paper is to study the dynamics of Dengue disease model using a novel piecewise derivative approach in the sense of singular and non-singular kernels. The singular kernel operator is in the sense of Caputo, whereas the non-singular kernel operator is the Atangana–Baleanu Caputo operator. The existence and uniqueness of a solution with piecewise derivative are examined for the aforementioned problem. The suggested...
-
Nonlinear Model of Synchronous Generator for Autonomous Electrical Power Systems Analysis
PublicationThis paper presents the nonlinear lookup table model for synchronous generator (SG) analysis. The saturation effects of the SG magnetic circuit have been considered. The saturated characteristic of the SG magnetic circuit are based on the open circuit saturation curve for magnetizing inductances. The model has been implemented into the Synopsys/Saber software using the MAST modelling language. To implement the no-load voltage characteristic...