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Search results for: gan
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Gaz, Woda i Technika Sanitarna
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Nafta-Gaz
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Studia Komitetu Przestrzennego Zagospodarowania Kraju PAN
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Ocena możliwości wykorzystania sieci pętlowych RPR I 10 Gigabit Ethernet do budowy sieci LAN/MAN/WAN
PublicationPrzedstawiono rozwiązania sieciowe: 10GE i RPR. W szczególności omówiono możliwość wykorzystania tych rozwiązań w sieciach LAN, MAN, WAN i ich współpracy z infrastrukturą SONET/SDH. Na tle zalet sieci zbudowanych całkowicie w technologii 10GE i ograniczeń jakim podlegają sieci Ethernet ukazano proponowane w RPR możliwości zarządzania pasmem i skuteczność mechanizmów reakcji na uszkodzenia. Przedstawiono koszty realizacji wybranych...
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BIULETYN KOMITETU PRZESTRZENNEGO ZAGOSPODAROWANIA KRAJU PAN
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IEEE LAN/MAN Workshop
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Metody udostępniania materiałów multimedialnych w sieciach LAN i WAN.
PublicationW referacie przedstawiono możliwości wzbogacania treści edukacyjnych dzięki wykorzystaniu technik multimedialnych. Uzupełnienie materiału edukacyjnego w postaci plików audio oraz wideo daje zupełnie nową jakość . Opisano jak stworzyć taki materiał, jaki jest potrzebny do realizacji oraz jak bardzo czasochłonny jest ten proces. Wnioski i spostrzeżenia zostały przedstawione na podstawie praktycznej realizacji wykładu dot. Systemu...
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Metody udostępniania materiałów multimedialnych w sieciach LAN I WAN.
PublicationWraz z rozpowszechnianiem usług szerokopasmowych zmniejsza się ograniczenie co do objętości oferowanych materiałów edukacyjnych udostępnianych w sieciach LAN i WAN. W referacie przedstawiono możliwości wzbogacenia treści edukacyjnych dzięki wykorzystaniu technik multimedialnych. Uzupełnienie materiału edukacyjnego w postaci plików audio i wideo daje zupełnie nową jakość. Opisano jak stworzyć taki materiał, jaki sprzęt jest potrzebny...
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Józef Woźniak prof. dr hab. inż.
PeopleProfessor Józef Woźniak received his M.Sc., Ph.D. and D.Sc. degrees in electronics and telecommunications from the Faculty of Electronics, Gdańsk University of Technology (GUT), Poland, in 1971, 1976 and 1991, respectively. In January 2002 he became a full professor. In 1993 he was elected Associate Dean of the Faculty of Electronics and in 1994 he was he was appointed a Professor at GUT. Simultaneously, from October 1994 till...
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublicationAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
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Can a man also be afraid? Partner communication, anxiety and hope in parents of premature infants
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The Peculiarity of Man
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Man and Environment
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Gran Tour
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MAN IN INDIA
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Kierunek Wod-Kan
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Effects of Heat and Momentum Gain Differentiation during Gas Detonation Spraying of FeAl Powder Particles into the Water
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Performance of FAN conception of traffic control in IP QoS networks
PublicationIn this paper we present the architectural implementation of Flow Aware Networking (FAN), a new approach for realizing QoS guarantees in the Internet. We also propose FAN traffic control algorithm which performs traffic control on flow level. Using the proposed FAN node model, we conduct simulation research to prove if FAN can be a new approach for realizing QoS guarantees. The basis of this research is finding a way to guarantee...
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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Wojciech Sadowski prof. dr hab. inż.
PeopleWojciech Sadowski (born 2 February 1954 in Ostaszewo, Poland), scientist, engineer, professor at Gdansk University of Technology, specialist in solid state body physics, nanotechnology, optoelectronics. In 1973 he completed his high school education at High School Nicolaus Copernicus in Chelmno. In 1979 he graduate from Leningrad Electrotechnical Institute in Russia (former Soviet Union) with specialism in dielectrics and semiconductors....
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Onderzoek van onderwijs
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STUDIA PRAWNICZE (PAN)
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Oil and Gas Geology
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Natural Gas Geoscience
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Journal of Gang Research
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Contemporary Ob/Gyn
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Medical Gas Research
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Revista San Gregorio
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OIL & GAS JOURNAL
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Gas Science and Engineering
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Forum Leczenia Ran
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PAN-PACIFIC ENTOMOLOGIST
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublicationW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
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Burn depths evaluation based on active dynamic IR thermal imaging - A preliminary study
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublicationWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
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Efficiency of gas mixtures detection by resistive gas sensors
PublicationResistive gas sensors are very popular and are commonly used to detect various gases and their mixtures. Theeir main disadvantage is very limited selectivity. Practical use of gas sensors in environenmental applications requires determination of concentration of a few mixed gases at the same time. We would like to present recent results of gas detection improvement by utilizing a single gas sensor and additional measurements to...
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EFFICIENCY OF GAS MIXTURES DETECTION BY RESISTIVE GAS SENSORS
PublicationResistive gas sensors are very popular and are commonly used to detect various gases and their mixtures. Their main disadvantage is very limited selectivity. Practical use of gas sensors in environmental applications (e.g., in sewage systems to protect workers, in air conditioning systems to monitor atmosphere quality) requires determination of concentration of a few mixed gases at the same time. We would like to present recent...
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Problems of gas detection by resistance fluctuations in gas sensors
PublicationPrzedstawiono problemy budowy dystrybutora gazów oraz próbek zapachowych do badań sensorów gazu. Podano układ elektroniczny wykorzystywany do rejestracji fluktuacji rezystancji obserwowany w czujnikach gazu. Załączono przykładowe wyniki obserwacji sygnałów losowych.
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Gas sampling system for matrix of semiconductor gas sensors
PublicationSemiconductor gas sensors are popular commercial sensors applied in numerous gas detection systems. They are reliable, small, rugged and inexpensive. However, there are a few problem limiting the wider use of such sensors. Semiconductor gas sensor usually exhibits a low selectivity, low repeatability, drift of response, strong temperature and moisture influence on sensor properties. Sample flow rate is one of the parameters that...
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Selectivity of amperometric gas sensors in multicomponent gas mixtures
PublicationIn recent years smog and poor air quality became a growing environmental problem. There is a need to continuously monitor the quality of air. The lack of selectivity is one of the most important problems limiting the use of gas sensors for this purpose. In this study, a selectivity of the six amperometric gas sensors is being investigated. Calibration of sensors has been performed in order to find a correlation between concentration...
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The (de)biasing Effect of GAN-Based Augmentation Methods on Skin Lesion Images
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
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