Search
Search results for: MICROWAVE TRANSISTORS
-
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Journals -
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Journals -
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Journals -
Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
-
IET Microwaves Antennas & Propagation
Journals -
Microwave Review
Journals -
MICROWAVE JOURNAL
Journals -
Terahertz imaging by field effect transistors
Publication -
Terahertz Plasma Field Effect Transistors
Publication -
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Journals -
Meta : Translators' Journal
Journals -
Terahertz detection and emission by field-effect transistors
Publication -
Terahertz rectification by graphene field effect transistors
Publication -
MICROWAVES & RF
Journals -
Current Microwave Chemistry
Journals -
GaN/AlGaN based transistors for terahertz emitters and detectors
Publication -
Plasma nonlinearities and terahertz detection by Field Effect Transistors
Publication -
Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
-
Errors caused by microwave part of the microwave heating system
PublicationPrzedstawiono skrótowo zasadę pracy i konstrukcję systemu do badań naukowych procesów grzania mikrofalowego. Wyprowadzono wyrażenie opisujące wartość średniokwadratową błędu pomiaru energii mikrofalowej i przeanalizowano składowe błędu pomiaru powodowane przez rzeczywiście występujące w układzie pomiarowym parametry techniczne jego części mikrofalowej.
-
Detection of high intensity thz radiation by field effect transistors
Publication -
Terahertz Detectors Based on Silicon Technology Field Effect Transistors
Publication -
Terahertz imaging with arrays of plasma field effect transistors detectors
Publication -
Sub-terahertz detection by fin-shaped GaN/AlGaN transistors
Publication -
Temperature enhancement of terahertz responsivity of plasma field effect transistors
Publication -
Terahertz vision using field effect transistors detectors arrays
Publication -
Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
-
Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
-
Organic filed effect transistor with zinc phthalocyanine.
PublicationW pracy przedstawiono wyniki badań doświadczalnych organicznego tranzystora polowego z warstwą ftalocyjaniny cynku. Jako podłoże zastosowano wysoko domieszkowane wafle krzemu pokryte warstwą tlenku krzemu (IV) o grubości 100 nm, na którą techniką fotolitograficzną była naniesiona struktura elektrod (tzw. geometria dolnych kontaktów). Złote elektrody źródła i drenu tworzyły kanał o długości 5 m (jest to odległość między elektrodą...
-
The behavioural model of graphene field-effect transistor
PublicationThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
-
Silicon field-effect transistors as radiation detectors for the Sub-THz range
Publication -
Terahertz imaging with GaAs and GaN plasma field effect transistors detectors
Publication -
Graphene field-effect transistor application for flow sensing
PublicationMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
-
Field effect transistor as detector of THz radiation helicity
Publication -
Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
Publication -
Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities
Publication -
Terahertz radiation detection by double grating-gate transistors in high magnetic fields
Publication -
A Terahertz plasma oscillations in nanometer field effect transistors for Terahertz radiation rectification
Publication -
Low frequency noise and trap density in GaN/AlGaN field effect transistors
Publication -
Detection of high intensity THz radiation by InP double heterojunction bipolar transistors
Publication -
The PWM current source inverter with IGBT transistors and multiscalar model control system
PublicationW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
-
Kriging Models for Microwave Filters
PublicationSurrogate modeling of microwave filters’ response is discussed. In particular, kriging is used to model either the scattering parameters of the filter or the rational representation of the filter’s characteristics. Surrogate models for these two variants of kriging are validated in solving a microwave filter optimization problem. A clear advantage of surrogate models based on the rational representation over the models based on scattering...
-
The Microwave Sources for EPR Spectroscopy
Publication -
Terahertz Digital Holography Using Field-Effect Transistor Detectors
Publication -
Time Resolution and Power Dependence of Transistor Based Terahertz Detectors
Publication -
Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublicationA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
-
Method of sacrificial anode transistor-driving in cathodic protection system
PublicationA magnesium anode driving system has been proposed. A PNP driving transistor has been used. Electrochemical testing in 3%NaCl, results and comparison of the driving system and classic direct anode to cathode connection are presented. The driving system reduced the protection current and stabilized the working conditions of the anode. Higher anode efficiency was achieved. Overprotection and hydrogen embrittlement threats were prevented...
-
Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors
Publication -
Signal-to-noise ratio in terahertz wireless communication using field-effect-transistors as detectors
Publication -
Effect of Microwave Radiation Power on the Size of Aggregates of ZnO NPs Prepared Using Microwave Solvothermal Synthesis
Publication -
Preparation of exfoliated graphite by microwave irradiation
Publication