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Search results for: GRAPHENE FIELD-EFFECT TRANSISTOR, BEHAVIOURAL MODEL, CIRCUIT SIMULATIONS, SENSORS
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The behavioural model of graphene field-effect transistor
PublicationThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Open Research DataThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
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Graphene field-effect transistor application for flow sensing
PublicationMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
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Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublicationA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
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A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublicationThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Method of sacrificial anode dual transistor-driving in stray current field
PublicationIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
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A subdomain model for armature reaction field and open‐circuit field prediction in consequent pole permanent magnet machines
PublicationIn this paper, the machine quantity, such as electromagnetic torque, self and mutual inductances, and electromotive force, is analytically calculated for non-overlapping winding consequent pole slotted machine for open-circuit field and armature reaction. The sub-domain approach of (2-D) analytical model is developed using Maxwell's equations and divide the problem into slots, slot-openings, airgap and magnets region, the magnet...
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Electrical responses of nanostructured ZrS3 as field-effect transistor for nitrogen dioxide, ethanol, and acetone detection enhanced by visible light
Open Research DataSmall-area layers of nanostructured ZrS3 were fabricated and measured in the field-effect transistor configuration. Irradiation with visible light enabled generating photocurrent and increasing the sensitivity to selected ambient gases: nitrogen dioxide, ethanol, and acetone. The data set consists of electrical responses (current vs. voltage characteristics...
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A Circuital Model of Electric Arc in a Circuit Breaker
PublicationThe paper presents a circuital model of arc in a circuit breaker. The model is intended to be used in simulations of the electric circuits transients. It was implemented in the ATP simulation program. The article presents also a few simulation examples of simple DC and AC circuit containing described arc model.
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Electrical and noise responses of graphene back-gated field-effect transistors enhanced by UV light for organic vapors sensing
Open Research DataBack-gated field-effect transistors with graphene channels (GFETs) were investigated toward organic vapors sensing. Two methods were used for sensing experiments including DC characteristics measurements and fluctuation-enhanced sensing by low-frequency noise studies. The data set consists of raw and modified data on GFET responses to acetonitrile,...
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Molecular Dynamics simulations of thermal conductivity of penta-graphene
PublicationThe thermal conductivity of penta-graphene (PG), a new two dimensional carbon allotrope and its dependence on temperature, strain, and direction are studied in this paper. The thermal conductivity of PG is investigated using a non-equilibrium molecular dynamics simulation (NEMD) with the Two Region Method by applying the optimized Tersoff interatomic potential. Our study shows that the thermal conductivity of PG (determined for...
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Representation of magnetic hysteresis in single-phase transformer for circuit simulations
PublicationThe paper presents a mathematical model for the hysteresis phenomenon in a multi-winding single-phase core type transformer. In the circuit transformer model, it is assumed that there is a flux common Φ to all windings as nonlinear and hysteretic function of the total currents Θ (Ampere turns) of all windings. To simulate magnetic behaviour of the iron core the feedback scalar Preisach model of hysteresis is developed. The Preisach...
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Magnetic Field Generated by Short Circuit Current in the 110 kV Power System
PublicationElectric fields within tissues induced by magnetic fields including transients or short-term peaks should not be time averaged and be regarded as instantaneous values as established in the ICNIRP (International Commission on Non - Ionizing Radiation Protection) guidelines. Measurements of power lines magnetic fields with regard to human beings exposure are carried out typically with maximum current load at current balance condition...
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A measurement method for capacitive sensors based on a versatile direct sensor-to-microcontroller interface circuit
PublicationIn the paper, there is presented a new time-domain measurement method for determining the capacitance values of capacitive sensors, dedicated, among others, to capacitive relative humidity sensors. The method is based on a versatile direct sensor-to-microcontroller interface for microcontrollers with internal analog comparators (ACs) and with precision voltage reference sources, e.g. digital-to-analog converters (DACs). The reference...
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Organic filed effect transistor with zinc phthalocyanine.
PublicationW pracy przedstawiono wyniki badań doświadczalnych organicznego tranzystora polowego z warstwą ftalocyjaniny cynku. Jako podłoże zastosowano wysoko domieszkowane wafle krzemu pokryte warstwą tlenku krzemu (IV) o grubości 100 nm, na którą techniką fotolitograficzną była naniesiona struktura elektrod (tzw. geometria dolnych kontaktów). Złote elektrody źródła i drenu tworzyły kanał o długości 5 m (jest to odległość między elektrodą...
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Areas of updraft air motion from WRF model simulations.
Open Research DataPresented dataset is a part of numerical modelling study focusing on the analysis of sea ice floes size distribution (FSD) influence on the horizontal and vertical structure of convection in the atmosphere. The total area and spatial arrangement of the updrafts indicates that the FSD affects the total moisture content and the values of area averaged...
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A measurement method for lossy capacitive relative humidity sensors based on a direct sensor-to-microcontroller interface circuit
PublicationA new time-domain measurement method for determining the capacitance and resistance values of lossy relative humidity capacitive sensors is presented. The method is based on a direct sensor-to-microcontroller interface for microcontrollers with internal analog comparators and timers. The interface circuit consists only of four reference resistors (two reference resistors if a microcontroller includes a voltage reference source),...