Filters
total: 4497
-
Catalog
displaying 1000 best results Help
Search results for: wide bandgap semiconductors, gan transistors, power transistors, overcurrent protection, smps, gate circuit
-
Magnetic Field Generated by Short Circuit Current in the 110 kV Power System
PublicationElectric fields within tissues induced by magnetic fields including transients or short-term peaks should not be time averaged and be regarded as instantaneous values as established in the ICNIRP (International Commission on Non - Ionizing Radiation Protection) guidelines. Measurements of power lines magnetic fields with regard to human beings exposure are carried out typically with maximum current load at current balance condition...
-
Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
Publication -
Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublicationExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
-
Automatic tuning of a resonant circuit in wireless power supply systems for biomedical sensors
PublicationIn this paper, a tuning method of a resonant circuit suited for wireless powering of miniature endoscopic capsules is presented and discussed. The method allows for an automatic tuning of the resonant frequency and matching impedance of a full wave rectifier loading the resonant circuit. Thereby, the receiver tunes so as to obtain the highest power efficiency under given conditions of transmission. A prototype receiver for wireless...
-
Magnetic and capacitive couplings influence on power losses in double circuit high voltage overhead transmission line
PublicationPurpose – The paper aims to discuss problems of power and energy losses in a double-circuit overhead transmission line. It was observed from energymeters’ readings, that in such a line, active power losses can be measured as “negative”. The “negative” active power losses appear when the active power injected to the circuit is lower than the active power received at the circuit end. The purpose of this paper is to explain this phenomenon. Theoretical...
-
Calculation of Induced Sheath Voltages in Power Cables – Single Circuit System versus Double Circuit System
PublicationThis paper presents comparison of values of induced sheath voltages in power cable metallic sheaths when one or two cables per phase are used. Calculation of voltages is performed for various phase sequences of the power cables. Three types of the sheaths bonding and earthing are considered. Shock hazard and voltage stress of non-metallic outer sheath of cables are evaluated. The proposed, optimal configuration of the power cable...
-
Transient States during Short-circuit in a Line Powered by UPS and its Impact on Earth Fault Loop Impedance Measurement and Power Quality
PublicationThe short-circuit in a line powered by Uninterruptible Power Supply (UPS) during different UPS operation modes is presented in the article. The transient state condition related to the short-circuit in a line fed from double conversion On-line UPS is discussed in detail. The results of the measurements of earth fault loop impedance (FLI) in circuits powered by UPS with the instruments of various manufacturers are presented. The...
-
System of protection against electric shock for circuits with power electronics converters
PublicationModern low voltage circuits are very often equipped with power electronics converters, therefore in these circuits non-sinusoidal earth currents (touch currents) may occur. For non-sinusoidal currents safety criteria should be modified. This paper presents these modified criteria and a computer system of protection against electric shock which can be implemented in circuits with power electronics converters. The system is based...
-
Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
PublicationPoly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters...
-
Remarks on the Subject of Back-Up Protection of Residual Current Devices
PublicationResidual current devices without integral overcurrent protection (RCCBs) are back-up protected by fuses or miniature circuit-breakers (MCBs). If the latter are used, special attention must be given to the coordination between an RCCB and an MCB. This paper indicates probable cases of the aforementioned devices coordination, in which back-up protection of the RCCB is not adequate. A laboratory test has shown that depending on the...
-
Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublicationWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
-
The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
-
Magnetic and capacitive couplings influence on power and energy measurement in double circuit high voltage overhead transmission line
PublicationThe paper discusses influence of magnetic and capacitive couplings on power and energy measurement in case of double circuit high voltage overhead transmission line. There are presented and discussed various factors influencing the power flow among the line‟s circuits. Mathematical model based calculations results are compared to the real transmission line measurements.
-
Analysis of the dynamic influences on the Lowland Gate in Gdańsk
PublicationThe Lowland Gate has been built in 1626. It is one of the best-preserved historical buildings in Gdansk. The structure is still of the city's infrastructural importance as through it goes a road connecting two districts. The Gate is now so neglected that it is hard to appreciate its value. The main purpose of the investigation carried out was to determine the harmfulness of the traffic on the structure as well as the reasons of...
-
Electron mobility variance in semiconductors: the variance approach
PublicationPraca przedstawia nowe podejście da analizy zjawisk losowych w półprzewodnikach. Uwzględnia kilka mechanizmów zjawisk fluktuacji ruchliwości w półprzewodnikach, prowadzących do powstawamai składowej szumów typu 1/f, dominujących w zakresie małych czetotliwości. Przedstawia analizę sposobu wyznaczenia stałej Hooge'a określającej intensywność szumów typu 1/f.The statistical non-triviality of current carrier mobility fluctuations...
-
Circuit
Journals -
Design of Inner Gate for CRIST Shipyard Dry Dock
PublicationThe paper deals with a removable steel inner gate which was designed to separate two parts of a dry dock of about 70 m in width and 380 m in length. The gate allows for independent assembly of ship structures in two separated parts of the dock. The fore part of the dock can be flooded while the after part is dry. Tthe gate was designed by IDEK Company Ltd in 2011 and it was soon constructed and used by CRIST Shipyard in Gdynia.
-
Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublicationW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
-
Modal Analysis of a Steel Radial Gate Exposed to Different Water Levels
PublicationWith the increase in water retention needs and planned river regulation, it might be important to investigate the dynamic resistance of vulnerable elements of hydroelectric power plants, including steel water locks. The most frequent dynamic loads affecting hydroengineering structures in Poland include vibrations caused by heavy road and railway traffic, piling works and mining tremors. More destructive dynamic loads, including...
-
3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...