Filtry
wszystkich: 104
wybranych: 66
Wyniki wyszukiwania dla: transoptor
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Accurate Computation of IGBT Junction Temperature in PLECS
PublikacjaIn the article, a new method to improve the accuracy of the insulated-gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is...
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A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublikacjaThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublikacjaA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
PublikacjaWe report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...
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A Perspective on Fast-SPICE Simulation Technology
PublikacjaThis chapter presents an introduction to the area of accelerated transistor-level (‘fast-SPICE’) simulation for automated verification and characterization of integrated circuits (ICs) from technologist’s perspective. It starts with outlining goals, expectations and typical usage models for fast-SPICE simulators, stressing how they differ from regular SPICE tools. It continues with presenting and classifying core technologies typically...
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublikacjaWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Przyrząd wirtualny do wykrywania szumów wybuchowych w przyrządach półprzewodnikowych metodą obrazowania szumów
PublikacjaW artykule scharakteryzowano właściwości szumów wybuchowych (RTS) w dziedzinie czasu i częstotliwości oraz omówiono stosowane metody identyfikacji szumów RTS. Przedstawiono konstrukcję systemu, do szybkiej identyfikacji szumów wybuchowych, zbudowanego w oparciu o metodę Noise Scattering Pattern (NSP). System składa się z głowicy pomiarowej, zawierającej spolaryzowany badany przyrząd półprzewodnikowy, filtru dolnoprzepustowego,...
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Rozpoznawanie elementów elektronicznych w obudowach SOT-23
PublikacjaProdukowane obecnie elementy elektroniczne do montażu powierzchniowego (SMD) mają tak małe obudowy, że producenci nie są w stanie umieszczać na nich dostatecznej ilości oznaczeń umożliwiających ich jednoznaczną identyfikację. Ponadto, podobnie jak w przypadku elementów do montażu przewlekanego, w obudowie jednego typu mogą być zamknięte różne rodzaje elementów. Przykładem takiej obudowy jest obudowa SOT-23 (Small Outline Transistor)....
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A 0.5 V Nanowatt Biquadratic Low-Pass Filter with Tunable Quality Factor for Electronic Cochlea Applications
PublikacjaA novel implementation of an analogue low-power, second-order, low-pass filter with tunable quality factor (Q) is presented and discussed. The filter feature is a relatively simple, buffer-based, circuit network consisting of eleven transistors operating in a subthreshold region. Q tuning is accomplished by injecting direct current into a network node, which changes the output resistance of the transistors and, as a result, modifies...
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublikacjaExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublikacjaThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Reducing common mode voltage and bearing currents in quasi - resonant DC - link inverter
PublikacjaIn the paper, a concept of separation of an inverter-fed induction motor drive from its mains supply by two transistor switches inserted in the dc-link circuit is reexamined based on the proposed parallel quasi-resonant dc-link inverter (PQRDCLI). The objective of the paper is to show an advantage of the proposed topology in limiting high frequency common mode voltage and bearing currents. In the laboratory setup, an induction...
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The IPV6 Deployment - Best practices
PublikacjaThe new Internet Protocol IPv6 has been regarded for quite a long time as the only option to ensure uninterrupted operation for the Internet service providers andend-users in the current Internet. The article presents important faets about the IPv6, including current statistics of the IPv4 usage, the IPv6 statistics for Poland comparing to the whole Internet. Moreover, this paper shows important aspeets of migration from IPv4 towards...
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Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
PublikacjaThis paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching,...
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublikacjaThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Nonlinear Control of a Doubly Fed Generator Supplied by a Current Source Inverter
PublikacjaNowadays, wind turbines based on a doubly fed induction generator (DFIG) are a commonly used solution in the wind industry. The standard converter topology used in these systems is the voltage source inverter (VSI). The use of reverse-blocking insulated gate bipolar transistor (RB-IGBT) in the current source inverter topology (CSI), which is an alternative topology, opens new possibilities of control methods. This paper presents...