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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublikacjaThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Enhanced Light-Induced Biosynthesis of Fatty Acids Suitable for Biodiesel Production by the Yellow-Green Alga Eustigmatos magnus
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EU Project of LIFE Programme ‘Algae Service for LIFE’ Develops Ecologicaly Sustainable Bioproducts from Freshwater Cyanobacteria and Macroalgae Biomas
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Does diclofenac act like a photosynthetic herbicide on green algae? Chlamydomonas reinhardtii synchronous culture-based study with atrazine as reference
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Wojciech Sadowski prof. dr hab. inż.
OsobyWojciech Sadowski (ur. 2.02.1954 r. w Ostaszewie), naukowiec, polski inżynier, profesor Politechniki Gdańskiej, specjalista z fizyki ciała stałego, nanotechnologii, optoelektroniki. Studia wyższe ukończył w 1979 r. w Leningradzkim Instytucie Elektrotechnicznym w Leningradzie w specjalności dielektryki i półprzewodniki, uzyskując tytuł zawodowy magistra inżyniera elektronika. Od 1979 r. pracuje na Politechnice Gdańskiej, pełniąc...
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Onderzoek van onderwijs
Czasopisma -
STUDIA PRAWNICZE (PAN)
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Oil and Gas Geology
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Natural Gas Geoscience
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Journal of Gang Research
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Contemporary Ob/Gyn
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Medical Gas Research
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Revista San Gregorio
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OIL & GAS JOURNAL
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Gas Science and Engineering
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Forum Leczenia Ran
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PAN-PACIFIC ENTOMOLOGIST
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublikacjaGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublikacjaW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublikacjaThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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EU Project of Life Programme “Algae Service for Life” Creates Tools for Ecological Service to Mitigate Cyanobacteria and Macroalgae Blooms in Freshwater Ecosystems
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Burn depths evaluation based on active dynamic IR thermal imaging - A preliminary study
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublikacjaThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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3D PCB package for GaN inverter leg with low EMC feature
PublikacjaThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublikacjaWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublikacjaA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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An Impact Analysis of Artificial Light at Night (ALAN) on Bats. A Case Study of the Historic Monument and Natura 2000 Wisłoujście Fortress in Gdansk, Poland
PublikacjaThe artificial light at night (ALAN) present in many cities and towns has a negative impact on numerous organisms that live alongside humans, including bats. Therefore, we investigated if the artificial illumination of the historic Wisłoujście Fortress in Gdańsk, Poland (part of the Natura 2000 network), during nighttime events, which included an outdoor electronic dance music (EDM) festival, might be responsible for increased...
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Problems of gas detection by resistance fluctuations in gas sensors
PublikacjaPrzedstawiono problemy budowy dystrybutora gazów oraz próbek zapachowych do badań sensorów gazu. Podano układ elektroniczny wykorzystywany do rejestracji fluktuacji rezystancji obserwowany w czujnikach gazu. Załączono przykładowe wyniki obserwacji sygnałów losowych.
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Selectivity of amperometric gas sensors in multicomponent gas mixtures
PublikacjaIn recent years smog and poor air quality became a growing environmental problem. There is a need to continuously monitor the quality of air. The lack of selectivity is one of the most important problems limiting the use of gas sensors for this purpose. In this study, a selectivity of the six amperometric gas sensors is being investigated. Calibration of sensors has been performed in order to find a correlation between concentration...
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Gas sampling system for matrix of semiconductor gas sensors
PublikacjaSemiconductor gas sensors are popular commercial sensors applied in numerous gas detection systems. They are reliable, small, rugged and inexpensive. However, there are a few problem limiting the wider use of such sensors. Semiconductor gas sensor usually exhibits a low selectivity, low repeatability, drift of response, strong temperature and moisture influence on sensor properties. Sample flow rate is one of the parameters that...
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Efficiency of gas mixtures detection by resistive gas sensors
PublikacjaResistive gas sensors are very popular and are commonly used to detect various gases and their mixtures. Theeir main disadvantage is very limited selectivity. Practical use of gas sensors in environenmental applications requires determination of concentration of a few mixed gases at the same time. We would like to present recent results of gas detection improvement by utilizing a single gas sensor and additional measurements to...
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EFFICIENCY OF GAS MIXTURES DETECTION BY RESISTIVE GAS SENSORS
PublikacjaResistive gas sensors are very popular and are commonly used to detect various gases and their mixtures. Their main disadvantage is very limited selectivity. Practical use of gas sensors in environmental applications (e.g., in sewage systems to protect workers, in air conditioning systems to monitor atmosphere quality) requires determination of concentration of a few mixed gases at the same time. We would like to present recent...
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
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The (de)biasing Effect of GAN-Based Augmentation Methods on Skin Lesion Images
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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
PublikacjaPoly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters...
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Bulletin van het Rijksmuseum
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Jurnal Gizi dan Pangan
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INTERNATIONAL GAS ENGINEERING AND MANAGEMENT
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Riset Geologi dan Pertambangan
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Pan African Medical Journal
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Gas Wasserfach Wasser Abwasser
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Natural Gas Industry B
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OIL GAS-EUROPEAN MAGAZINE
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Journal of Natural Gas Chemistry
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Improved Oil and Gas Recovery
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Upstream Oil and Gas Technology
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Masyarakat Kebudayaan dan Politik
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Leczenie Ran
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CFD ship squat determination method validation by GPS-RTK measurements
PublikacjaArtykuł zawiera porównanie numerycznych obliczeń osiadania statku z wynikami badań rzeczywistych z wykorzystaniem metody GPS-RTK.