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Search results for: AZOTEK GALU (GAN)
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Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublicationW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
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BADANIA EWALUACYJNE TRANZYSTORA 650 V E-HEMT GAN DO ZASTOSOWAŃW WYSOKOSPRAWNYCH PRZEKSZTAŁTNIKACH DC/DC
PublicationTematem artykułu są badania wysokonapięciowegotranzystora z azotku galu typu E-HEMT w aplikacji przekształtnikaobniżającego napięcie typu buck. W pracy przedstawiono krótkącharakterystykę i zalety półprzewodników szerokoprzerwowych,a także opis tranzystora GS66508P-E03 w obudowie do montażupowierzchniowego (SMD). Następnie poruszono problemchłodzenia łącznika mocy SMD i przeprowadzono badanieporównawcze dwóch układów chłodzenia....
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublicationAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublicationWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
PublicationPoly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters...
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications
PublicationWe studied the electronic and magnetic properties of wurtzite GaN (w-GaN) doped with different concentrations of the 4d transition metal ions Nb, Mo, and Ru. We incorporated spin-polarized plane-wave density functional theory within an ultrasoft pseudopotential formalism. The 4d transition metals were doped at different geometrical sites to determine the geometry with the lowest total energy and the one that induced the largest...
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Open Research DataThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
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Diffractive optics for GaN terahertz detectors arrays
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Millimetre band detectors based on GaN/AlGaN HEMT
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GaN/AlGaN based transistors for terahertz emitters and detectors
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Anomalous sub-THz detection by GaN/AlGaN FinFETs
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Terahertz detection by AlGaN/GaN HEMTs at high intensity
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Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
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Noise limitations of GaN lateral Schottky diodes for THz applications
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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation
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AlGaN/GaN HEMTs for THz Plasma Wave Detection and Emission
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Sub-terahertz detection by fin-shaped GaN/AlGaN transistors
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Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals
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Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation
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GaN/AlGaN lateral Schottky barrier diodes for high frequency applications
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Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector
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AlGaN/GaN heterostructures for plasma wave detection and emission in THz regime
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Terahertz imaging with GaAs and GaN plasma field effect transistors detectors
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Different Terahertz Phases of AlGaN/GaN Grating-Gate Plasmonic Crystals
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Low dark current metal-semiconductor-metal photodetectors fabricated on GaN
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Modified bow-tie antennas AlGaN/GaN FinFETs for sub-THz detection
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Low frequency noise and trap density in GaN/AlGaN field effect transistors
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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The (de)biasing Effect of GAN-Based Augmentation Methods on Skin Lesion Images
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Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
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Wojciech Sadowski prof. dr hab. inż.
PeopleWojciech Sadowski (born 2 February 1954 in Ostaszewo, Poland), scientist, engineer, professor at Gdansk University of Technology, specialist in solid state body physics, nanotechnology, optoelectronics. In 1973 he completed his high school education at High School Nicolaus Copernicus in Chelmno. In 1979 he graduate from Leningrad Electrotechnical Institute in Russia (former Soviet Union) with specialism in dielectrics and semiconductors....
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Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors
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Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination
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Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation
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Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection
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Current-driven THz emission from AlGaN/GaN grating gate structures in the magnetic field
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A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
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Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics
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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
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High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
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