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Search results for: ISOLATED GATE BIPOLAR TRANSISTOR (IGBT)
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Accurate Computation of IGBT Junction Temperature in PLECS
PublicationIn the article, a new method to improve the accuracy of the insulated-gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is...
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The time-varying low-frequency magnetic-field emitted from the ship’s inverter-fed induction motor
Open Research DataThe dataset contains the magnetic field measurement results that are part of a comprehensive study on the assessment of the magnetic field emissions onboard of the research-training vessel. The measurements were carried out, nearby the bow thruster motor fed from the inverter, during maneuvering and the sea voyage. The bow thruster is assembled in the...
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Nonlinear Control of a Doubly Fed Generator Supplied by a Current Source Inverter
PublicationNowadays, wind turbines based on a doubly fed induction generator (DFIG) are a commonly used solution in the wind industry. The standard converter topology used in these systems is the voltage source inverter (VSI). The use of reverse-blocking insulated gate bipolar transistor (RB-IGBT) in the current source inverter topology (CSI), which is an alternative topology, opens new possibilities of control methods. This paper presents...
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Multi-Transformer Flyback Converter for Supplying Isolated IGBT and MOSFET Drivers
PublicationA multi transformer flyback converter topology for supplying transistor drivers is presented. The topology presents some advantages over typical multi output single transformer, as reduction of effective leakage inductance, equal magnetic coupling between primary and secondary circuits and better isolation between outputs. Simulation study carried out in the LTSpice IV program and preliminary experimental results indicate high...
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Multi-transformer primary-side regulated flyback converter for supplying isolated IGBT and MOSFET drivers
PublicationThis paper presents primary-side voltage regulated multi-transformer quasi-resonant flyback converter (MTFC) for supplying isolated power switch drivers. The proposed topology offers distinct advantages over frequently used flyback converter possessing one high frequency transformer with isolated multiple outputs. Particularly, when a large number of separate dc supply units is required, then MTFC enables improved regular distribution...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Measurements of Subnanometer Molecular Layers
PublicationSelected methods of formation and detection of nanometer and subnanometer molecular layers were shown. Additionally, a new method of detection and measurement with subnanometer resolution of layers adsorbed or bonded to the gate dielectric of the ion selective field effect transistor (ISFET) was presented.
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A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublicationThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
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Accurate electrothermal modelling of high frequency DC-DC converters with discrete IGBTs in PLECS software
PublicationIn the paper, a novel, improved method of the IGBT junction temperature computations in the PLECS simulation software is presented. The developed method aims at accuracy of the junction temperature computations in PLECS by utilising a more sophisticated model of transistor losses, and by taking into account variability of transistor thermal resistance as a function of its temperature. A detailed description of the proposed method,...
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A quasi-2D small-signal MOSFET model - main results
PublicationDynamic properties of the MOS transistor under small-signal excitation are determined by kinetic parameters of the carriers injected into the channel, i.e., the low-field mobility, velocity saturation, mobility at the quiescent-point (Q-point), longitudinal electric field in the channel, by dynamic properties of the channel, as well as by an electrical coupling between the perturbed carrier concentration in the channel and the...
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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
PublicationWe report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublicationExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
PublicationThis paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching,...
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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The standard radiated immunity test of an astable multivibrator at a normative field strength
Open Research DataThe dataset presents a result of measurements that are a part of electromagnetic field immunity tests. The radiated, radio frequency, immunity tests were carried out for a typical astable electronic multivibrator. Tests of immunity of electronic systems to radiated radio frequency (RF) disturbances in the frequency range from 80 MHz to 1 GHz are performed...