Search
Filters
total: 827
filtered: 140
Search results for: SUBSTRAT WOLNOROZKŁADALNY
-
The AFM micrographs of gold nanoparticles on silicon substrate
Open Research DataThe dataset contains the first approach towards AFM topographic imaging of gold nanoparticles synthesized and immobilized on the silicon surface. Measurements were made in the semi-contact mode on the NTEGRA Prima device, manufactured by NT-MDT. Scans were performed with amplitude detection at an operating value of 60% of the free oscillation amplitude....
-
Temperature of formation of Au nanostructures
Open Research DataNanostructures were obtained via annealing of thin Au films. In order to determine possible nanoislands formation mechanisms, dependence on initial film thickness was examined. For the surface morphology studies, nanograin structure and chemical composition analysis, SEM, HR TEM and EDS measurements were performed, respectively. Morphology studies shown...
-
Interface diffusion between metallic nanoparticles and silicon substrate
Open Research DataInterface diffusion between metallic nanoparticles and silicon substrate was detected by EDX method. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
-
Mechanical lithography in a polymer substrate using AFM in contact mode
Open Research DataMechanical lithography in a polymer substrate. Contact mode. NTEGRA Prima (NT-MDT) device. NSG 01 probe.
-
XRD patterns of V2O5 thin films deposited on silicon substrate
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
-
Substrate characterization in a electrochemically derived Manganium-Cobaltium thin films
Open Research DataManganium-Cobaltium thin films were electrochemically deposited on a Ni foams subsrates in a one-step process at −1.1 V vs. Ag/AgCl in an aqueous solution of differently concentrated Mn(NO3)2·4H2O and Co(NO3)2·6H2O with the deposition time limited by charges of 60, 120, and 200 mC at 25 °C. The concentration ratios of Mn(NO3)2·4H2O to Co(NO3)2·6H2O...
-
Depth XPS profile of Fe-S layers on a titanium substrate
Open Research DataDepth XPS profile of Fe-S layers on a titanium substrate was measured. Material was etched by Argon ion gun and measured by XPS method. For each sample, three times per 10 minutes each was sputtered.
-
XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
-
Morphology and structure of V2O5 nanorods deposited on the silicon substrate after reduction
Open Research DataThe DataSet contains the XRD patterns and SEM micrographs of V2O5 nanorods on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C for 40 under a reducing atmosphere (94% Ar, 6% H2).
-
XRD patterns of V2O5 thin film morphology dependent on substrate types
Open Research DataThe DataSet contains the XRD patterns of the V2O5 thin film structure dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h.
-
SEM micrographs of V2O5 thin film morphology dependent on substrate types
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin film morphology dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h. The results show that the morphology of...
-
SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
-
SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
-
Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
-
XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Open Research DataThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
SEM analysis of the TiO2 layers deposited on a FTO substrates
Open Research DataTitanium dioxide layers were deposited on a FTO conducting glass by sol-gel method. For sol gel synthesis butoxy titanium and ethanol were used as a reagents. Samples were sintered in a furnace at temperature of 600 deg. SEM measurements were performed by FEI Quanta FEG250 microscope. SEM images of a cross-section of samples exhibit a porous structures...
-
The AFM micrographs of isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the atomic force microscope images of isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 20 to 90 seconds
-
XRD patterns of vanadium oxide nanostructures on quartz glass substrate obtained by V2O5 recrystallization
Open Research DataThe DataSet contains the XRD patterns of vanadium oxide nanostructures on quartz glass substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
Polyacrylamide substrate viscosity impact on temozolomide activity in glioblastoma cells by flow cytometry and rheological measurements
Open Research DataDataset includes raw data on cell lines LN-229 and LN-18 treated with temozolomide measured by flow cytometry, rheometry and cell projections. It also includes calculations necessary for creation of figures and conclusions based on those figures in the publication titiled: "Substrate viscosity impairs temozolomide-mediated inhibition of glioblastoma...
-
X-Ray diffraction of the metallic nanostructures
Open Research DataMetallic nanostructures (gold and silver) were manufactured as a thermal annealing of gold or silver thin film. Gold films with thickness of 2.8 nm were deposited on a silicon substrates using a table-top dc magnetron sputtering coater (EM SCD 500, Leica), equipped with quartz microbalance for in-situ thickness measurements. Films were deposited from...
-
Oxygen partial pressure and temperature dependence of Gerischer element of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Open Research DataThis dataset contains values of Gericher element at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C)and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent circuit...
-
Oxygen partial pressure and temperature dependence of series resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Open Research DataThis dataset contains values of series resistance (R) at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of series resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element series resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
SEM images of tge gold nanostructures on silicon
Open Research DataAu nanostructures were prepared on Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air Products 99.999%)....
-
Oxygen partial pressure and temperature dependence of low frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Open Research DataThis dataset contains values of low frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of middle frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Open Research DataThis dataset contains values of middle frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of low frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Open Research DataThis dataset contains values of low frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of middle frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Open Research DataThis dataset contains values of middle frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
SEM images of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
-
SEM images of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
-
Results of SEM examination of chitosan/Eudragit E 100 coatings electrophoretically deposited on the Ti grade 2 substrate
Open Research DataThe database contains the images of the microstructure of the coatings observed with the SEM scanning electron microscope. The chitosan/Eudragit E 100 coatings deposited on the Ti grade 2 substrate by an electrophoresis process were tested. Different process parameters like Eudragit E 100 concentration (0.25 g and 0.5 g in 100 mL of 1% (v/v) acetic...
-
SEM images of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
-
Oxygen partial pressure and temperature dependence of R-CPE1 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element R-CPE1 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE2 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element R-CPE2 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
-
Oxygen partial pressure and temperature dependence of R-CPE1 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element R-CPE1 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE1 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element R-CPE1 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE2 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element R-CPE2 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE2 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Open Research DataThis dataset contains values of equivalent circuit element R-CPE2 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Formation of gold anostructures detected by SEM microscope
Open Research DataGold nanostructures were prepared on silicon - Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air...
-
SEM images of symmetrical cell interface with SrTi1-xFexO3-d electrodes and CGO-20 substrate sintered at 800 °C
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with SrTi1-xFexO3-d (x=0.35; 0.50; 0..70) electrodes and CGO-20 substrate sintered at 800 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage of 12 kV in a high vacuum...
-
TEM and EDX study of the Al2O3 ultra thin films
Open Research DataThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
-
Exemplary SEM images of polished cross sections of symmetrical cell with SrTi0.50Fe0.50O3-d electrodes and CGO-20 substrate sintered at 800 °C
Open Research DataThis dataset contains images of polished cross section of symmetrical cell with SrTi0.50Fe0.50O3-d electrodes and CGO-20 substrate sintered at 800 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage of 12 kV in a high vacuum mode.
-
SEM images of symmetrical cell interface with Sr1.05Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with Sr1.05Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
-
SEM images of symmetrical cell interface with Sr0.90Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with Sr0.90Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
-
SEM images of symmetrical cell interface with Sr0.95Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with Sr0.95Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
-
SEM images of symmetrical cell interface with Sr1.00Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Open Research DataThis dataset contains images of polished cross section of symmetrical cell interface with Sr1.00Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
-
TEM data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Dataset include presentation of summarized TEM investigation of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited...
-
Investigation of the uniformity of TeO2:Eu layer
Open Research DataTeO2 doped by Eu thin films manufactured by magnetron sputtering method were measured by XPS method. Te-Eu mosaic target with diameter of 50.8 mm was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the deposition chamber was below 0.2 Pa and substrate was heated at 200 oC during...
-
The AFM topographic measurements of the surface heterogeneity of iron hexacyanoferrate on a steel surface
Open Research DataMeasurements in semi-contact mode. NTEGRA Prima (NT-MDT) device. NSG 01 probe.