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Wyniki wyszukiwania dla: in silico
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Silicon microcantilever with impedance sensor
Dane BadawczeThe issue of microelectromechanical systems (MEMS) [1] has been enjoying popularity and interest since the 90s of the 20th century. Microcells are one of the simplest devices of this type, but they can be widely used in sensors. There are reports on the possibility of using this type of sensors in the context of such important issues as diagnostics...
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The AFM micrographs of gold nanoparticles on silicon substrate
Dane BadawczeThe dataset contains the first approach towards AFM topographic imaging of gold nanoparticles synthesized and immobilized on the silicon surface. Measurements were made in the semi-contact mode on the NTEGRA Prima device, manufactured by NT-MDT. Scans were performed with amplitude detection at an operating value of 60% of the free oscillation amplitude....
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SEM images of tge gold nanostructures on silicon
Dane BadawczeAu nanostructures were prepared on Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air Products 99.999%)....
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Interface diffusion between metallic nanoparticles and silicon substrate
Dane BadawczeInterface diffusion between metallic nanoparticles and silicon substrate was detected by EDX method. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
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The AFM micrographs of isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the atomic force microscope images of isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 20 to 90 seconds
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XRD patterns of V2O5 thin films deposited on silicon substrate
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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Morphology and structure of V2O5 nanorods deposited on the silicon substrate after reduction
Dane BadawczeThe DataSet contains the XRD patterns and SEM micrographs of V2O5 nanorods on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C for 40 under a reducing atmosphere (94% Ar, 6% H2).
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SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
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XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
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SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
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Electrical responses of Graphene-Silicon Schottky diodes toward nitrogen dioxide and tetrahydrofuran under irradiation
Dane BadawczeGraphene-Silicon Schottky junctions were utilized as gas sensors toward inorganic (nitrogen dioxide) and organic (tetrahydrofuran) gas qualitative and quantitative detection. The electrical responses of the sensors were collected in the form of current-voltage characteristics and measurements of current in time domain for a selected voltage bias. The...
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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SEM-EDS images of expanded polystyrene spheres coated with silicon dioxide (SiO2) and/or titanium dioxide (TiO2)
Dane BadawczeData contain SEM and SEM-EDS images of expanded polystyrene spheres coated with silicon dioxide (SiO2) and/or titanium dioxide (TiO2). The detailed equipment and measurement data was described in measurement info.txt file.
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Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
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Electrical and noise responses of Graphene-Silicon Schottky diodes decorated with Au nanoparticles for light-enhanced sensing of organic gases
Dane BadawczeGraphene-Silicon Schottky junctions decorated with Au nanoparticles were used for light-enhanced detection of organic tetrahydrofuran and chloroform. Au nanoparticles exhibited localized surface plasmon resonance (LSPR) in the range of yellow light; thus yellow LED (wavelength of 592 nm) was utilized to induce the plasmonic effect, that increased the...
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Brunauer-Emmett-Teller (BET) surface analysis of titanium dioxide (TiO2) and silicon dioxide (SiO2) used for coating of expanded polystyrene spheres (EPS)
Dane BadawczeData refer to the results of BET surface area of TiO2 and SiO2 powders used for coating of expanded polystyrene spheres. The detailed measurement and equipment data was described in readme BET.txt file.TiO2 was treated firstly in autoclave at 150 C degrees for 1h, then was further heat treated in Ar at 400 C degrees. As a raw material TiO2 was used,...
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Investigation of the C-1311 glucuronidation: an electrochemical approach
Dane BadawczeThis study was undertaken to investigate the glucuronidation of the compound C-1311 (5-diethylaminoethylamino-8-hydroxyimidazoacridinone – the model anticancer acridine derivative) using electrochemistry/mass spectrometry (EC/MS) as a complementary technique to in vitro (liver microsomes) and in silico approaches.