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Search results for: power transistors
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublicationW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Terahertz imaging by field effect transistors
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Terahertz Plasma Field Effect Transistors
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Terahertz detection and emission by field-effect transistors
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Terahertz rectification by graphene field effect transistors
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Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
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GaN/AlGaN based transistors for terahertz emitters and detectors
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Plasma nonlinearities and terahertz detection by Field Effect Transistors
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Detection of high intensity thz radiation by field effect transistors
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Terahertz Detectors Based on Silicon Technology Field Effect Transistors
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Terahertz imaging with arrays of plasma field effect transistors detectors
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Sub-terahertz detection by fin-shaped GaN/AlGaN transistors
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Temperature enhancement of terahertz responsivity of plasma field effect transistors
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Terahertz vision using field effect transistors detectors arrays
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Silicon field-effect transistors as radiation detectors for the Sub-THz range
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Terahertz imaging with GaAs and GaN plasma field effect transistors detectors
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Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
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Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
PublicationThis paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching,...
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Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities
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Terahertz radiation detection by double grating-gate transistors in high magnetic fields
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A Terahertz plasma oscillations in nanometer field effect transistors for Terahertz radiation rectification
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Low frequency noise and trap density in GaN/AlGaN field effect transistors
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Detection of high intensity THz radiation by InP double heterojunction bipolar transistors
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The PWM current source inverter with IGBT transistors and multiscalar model control system
PublicationW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
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SiC-Based Power Electronic Traction Transformer (PETT) for 3 kV DC Rail Traction
PublicationThe design of rolling stock plays a key role in the attractiveness of the rail transport. Train design must strictly meet the requirements of rail operators to ensure high quality and cost-eective services. Semiconductor power devices made from silicon carbide (SiC) have reached a level of technology enabling their widespread use in traction power converters. SiC transistors oering energy savings, quieter operation, improved reliability...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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SiC-based T-type modules for multi-pulse inverter with coupled inductors
PublicationThe paper presents SiC-based three-level T-type modules designed for a high-performance 30kVA DC/AC inverter operating at high frequency 85 kHz with low THD of the output voltage. This inverter system consists of two integrated parts. The first part is active and contains three parallelconnected three-phase T-type modules built with fast-switching SiC power transistors. The second, passive part of the system is a set of inductors...
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Analytical Estimation of Power Losses in a Dual Active Bridge Converter Controlled with a Single-Phase Shift Switching Scheme
PublicationMicro-grid solutions around the world rely on the operation of DC/DC power conver- sion systems. The most commonly used solution for these topologies is the use of a dual active bridge (DAB) converter. Increasing the efficiency and reliability of this system contributes to the improvement in the stability of the entire microgrid. This paper discussed an analytical method of energy efficiency and power loss estimation in a single...
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A 0.5 V Nanowatt Biquadratic Low-Pass Filter with Tunable Quality Factor for Electronic Cochlea Applications
PublicationA novel implementation of an analogue low-power, second-order, low-pass filter with tunable quality factor (Q) is presented and discussed. The filter feature is a relatively simple, buffer-based, circuit network consisting of eleven transistors operating in a subthreshold region. Q tuning is accomplished by injecting direct current into a network node, which changes the output resistance of the transistors and, as a result, modifies...
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Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors
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Signal-to-noise ratio in terahertz wireless communication using field-effect-transistors as detectors
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Sub-THz radiation room temperature sensitivity of long-channel silicon field effect transistors
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High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors
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Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
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A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
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Experimental and theoretical investigations of the responsivity of field effect transistors based Terahertz detectors versus substrate thickness
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Field Effect Transistors Based Terahertz Detectors 25 Years History, State of the Art and Future Directions
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Modelling and analysis of medium frequency transformers for power converters
PublicationThe evolutions in power systems and electric vehicles, related to the economic opportunities and the environmental issues, bring the need of high power galvanically isolated DC-DC converter. The medium frequency transformer (MFT) is one of its key components, enabled by the increasing switching frequency of modern power semiconductors like silicon carbide transistors or diodes. The increased operating frequency offers small...
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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
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A Supramolecular Approach to Enhance the Optoelectronic Properties of P3HT-b-PEG Block Copolymer for Organic Field-Effect Transistors
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A High-Efficient Low-Voltage Rectifier for CMOS Technology
PublicationA new configuration of rectifier suiting CMOS technology is presented. The rectifier consists of only two nchannel MOS transistors, two capacitors and two resistors; for this reason it is very favourable in manufacturing in CMOS technology. With these features the rectifier is easy to design and cheap in production. Despite its simplicity, the rectifier has relatively good characteristics, the voltage and power efficiency, and...
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Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Przegląd metod monitorowania stanu technicznego tranzystorów mocy
PublicationW artykule przedstawiono kilka metod monitorowania stanu technicznego tranzystorów mocy, które są lub mogą być wbudowane w układy przekształtnikowe. Celem artykułu jest określenie aktualnego stanu badań na ten temat. Prezentowane metody przeznaczone są do monitorowania istotnych objawów starzenia modułów mocy: rozwarstwiania struktury modułu na skutek termomechanicznego zmęczenia stopu lutowniczego, uszkodzeń połączeń drutowych...
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Highly linear CMOS triode transconductor for VHF applications
PublicationA high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback...