Wyszukiwarka
Wyniki wyszukiwania dla: GRAPHENE, FIELD-EFFECT TRANSISTOR, GFET, SENSOR
-
The behavioural model of graphene field-effect transistor
PublikacjaThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
-
Graphene field-effect transistor application for flow sensing
PublikacjaMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
-
Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublikacjaA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
-
Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Dane BadawczeThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
-
Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel
Dane BadawczeThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
-
Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Dane BadawczeThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
-
Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublikacjaThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
-
RECENT ADVANCES IN GRAPHENE APPLICATION FOR ELECTRONIC SENSING
PublikacjaThe great interest in graphene is caused by its potential for constructing various sensors exhibiting excellent parameters. The high carrier mobility and the unique band structure of graphene makes it promising especially in the field-effect transistors (GFET) applications. In this article, recent advances of the selected graphene-based sensor applications were presented and the possible directions for further investigations were...
-
Pulsed UV-irradiated Graphene Sensors for Ethanol Detection at Room Temperature
PublikacjaA graphene-based gas sensor fabricated in a FET (GFET) configuration and its sensitivity towards ethanol and methane is reported. Detection of ethanol at the level of 100 ppm was observed under pulsed UV irradiation and after cleaning by UV light in the N2 ambient. Reduction of the frequency of UV irradiation pulses resulted in increased changes in sensor resistance in the presence of ethanol. Improved sensing behavior was ascribed...
-
The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublikacjaThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
-
Electrical and noise responses of graphene back-gated field-effect transistors enhanced by UV light for organic vapors sensing
Dane BadawczeBack-gated field-effect transistors with graphene channels (GFETs) were investigated toward organic vapors sensing. Two methods were used for sensing experiments including DC characteristics measurements and fluctuation-enhanced sensing by low-frequency noise studies. The data set consists of raw and modified data on GFET responses to acetonitrile,...
-
Electrical responses of nanostructured ZrS3 as field-effect transistor for nitrogen dioxide, ethanol, and acetone detection enhanced by visible light
Dane BadawczeSmall-area layers of nanostructured ZrS3 were fabricated and measured in the field-effect transistor configuration. Irradiation with visible light enabled generating photocurrent and increasing the sensitivity to selected ambient gases: nitrogen dioxide, ethanol, and acetone. The data set consists of electrical responses (current vs. voltage characteristics...
-
Field effect transistor as detector of THz radiation helicity
Publikacja -
Sensitivity of Field-Effect Transistor-Based Terahertz Detectors
Publikacja -
Horizontally-split-drain MAGFET - a highly sensitive magnetic field sensor
PublikacjaWe propose a novel magnetic field sensitive semiconductor device, viz., Horizontally-Split-Drain Magnetic-Field Sensitive Field-Effect Transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and a Gradual Channel Detachment Effect (GCDE) and is very similar to that of Popovic and Baltes's SDMAGFET. The...
-
Method of sacrificial anode dual transistor-driving in stray current field
PublikacjaIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
-
Terahertz Digital Holography Using Field-Effect Transistor Detectors
Publikacja -
Terahertz rectification by graphene field effect transistors
Publikacja -
Substrate optimization for a planar antenna of terahertz Si field effect transistor detectors
Publikacja -
Time Resolution and Dynamic Range of Field-Effect Transistor–Based Terahertz Detectors
Publikacja -
Near Field Coupled Wireless Microwave Sensor
PublikacjaThis paper presents a wireless planar microwave sensor operating at industrial scientific and medical (ISM) frequency for the detection of dielectric materials. The microwave sensor consists of a reader (ground defected microstrip coupled line) and a passive tag where a complementary split-ring resonator (CSRR) is made on the commercially available copper-foil. The CSRR is a peel-off type tag that is excited using the near field...
-
Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays
Publikacja -
Optimization of substrate-lens-coupled CMOS field-effect transistor detectors for 250 GHz by pixel binning technique
Publikacja -
Organic filed effect transistor with zinc phthalocyanine.
PublikacjaW pracy przedstawiono wyniki badań doświadczalnych organicznego tranzystora polowego z warstwą ftalocyjaniny cynku. Jako podłoże zastosowano wysoko domieszkowane wafle krzemu pokryte warstwą tlenku krzemu (IV) o grubości 100 nm, na którą techniką fotolitograficzną była naniesiona struktura elektrod (tzw. geometria dolnych kontaktów). Złote elektrody źródła i drenu tworzyły kanał o długości 5 m (jest to odległość między elektrodą...
-
AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
Publikacja -
Multiple sound sources localization in free field using acoustic vector sensor
PublikacjaMethod and preliminary results of multiple sound sources localization in free field using the acoustic vector sensor were presented in this study. Direction of arrival (DOA) for considered source was determined based on sound intensity method supported by Fourier analysis. Obtained spectrum components for considered signal allowed to determine the DOA value for the particular frequency independently. The accuracy of the developed...
-
Measurements and Visualization of Sound Intensity Around the Human Head in Free Field Using Acoustic Vector Sensor
PublikacjaThis paper presents measurements and visualization of sound intensity around the human head simulator in a free field. A Cartesian robot, applied for precise positioning of the acoustic vector sensor, was used to measure sound intensity. Measurements were performed in a free field using a head and torso simulator and the setup consisting of four different loudspeaker configurations. The acoustic vector sensor was positioned around...
-
Study of the effect of thermally reduced graphene oxide on the physical and mechanical properties of flexible polyurethane foams
PublikacjaFlexible polyurethane foams were obtained from a two-component system via the one-step method. The foams were modified with thermally reduced graphene oxide added in the amount equal to 0.25, 0.5 and 0.75 wt%. The morphology, static and dynamic properties, and thermal stability of modified foams were determined. The application of carbon filler resulted in the visible increase in the cell size, apparent density and rigidity of...
-
Effect of graphene thickness on photocatalytic activity of TiO2-graphene nanocomposites
Publikacja -
Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics
Publikacja -
Effect of Variation of Hard Segment Content and Graphene-Based Nanofiller Concentration on Morphological, Thermal, and Mechanical Properties of Polyurethane Nanocomposites
PublikacjaThis study describes the development of a new class of high-performance polyurethane elastomer nanocomposites containing reduced graphene oxide (RGO) or graphene nanoplatelets (GNP). Two types of polyurethane elastomers with different contents of hard segments (HS) were used as a polymer matrix. The developed nanocomposites were characterized by thermal analysis (DSC, TG), dynamic mechanical testing (DMA), hardness testing, mechanical...
-
Synergistic effect of multi walled carbon nanotubes and reduced graphene oxides in natural rubber for sensing application
PublikacjaUtilizing the electrical properties of polymer nanocomposites is an important strategy to develop high performance solvent sensors. Here we report the synergistic effect of multi walled carbon nanotubes (MWCNTs) and reduced graphene oxide (RGO) in regulating the sensitivity of the naturally occurring elastomer, natural rubber (NR). Composites were fabricated by dispersing CNTs alone and together with exfoliated RGO sheets (thermally...
-
Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublikacjaExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
-
Sub-terahertz Near-field Dielectric Sensor in CMOS Technology
Publikacja -
CMOS-integrated near-field sensor for terahertz dielectric spectroscopy
Publikacja -
Critical Field and Specific Heat in Electron- and Hole-Doped Graphene Superconductors
Publikacja -
Terahertz imaging by field effect transistors
Publikacja -
Terahertz Plasma Field Effect Transistors
Publikacja -
Photoconduction and magnetic field effect on photoconduction in hole-transporting star-burst amine (m-MTDATA) films
PublikacjaPhotoconduction and magnetic field effect on photoconduction have been investigated as a function of electric field strength, excitation light intensity and wavelength in vacuum evaporated films of m-MTDATA (4,4′,4″-tris(N-(3-methylphenyl)-N-phenylylamino) triphenylamine), the starburst amine commonly used as hole-transporting material in organic light-emitting diodes. The photocurrent is found to be generated by the singlet exciton...
-
Schottky Junction-Driven Photocatalytic Effect in Boron-Doped Diamond-Graphene Core–Shell Nanoarchitectures: An sp3/sp2 Framework for Environmental Remediation
PublikacjaSelf-formation of boron-doped diamond (BDD)-multilayer graphene (MLG) core–shell nanowalls (BDGNWs) via microwave plasma-enhanced chemical vapor deposition is systematically investigated. Here, the incorporation of nitrogen brings out the origin of MLG shells encapsulating the diamond core, resulting in unique sp3/sp2 hybridized frameworks. The evolution mechanism of the nanowall-like morphology with the BDD-MLG core–shell composition...
-
Terahertz detection and emission by field-effect transistors
Publikacja -
Evaluation the P-Delta Effect on Collapse Capacity of Adjacent Structures Subjected to Far-field Ground Motions
PublikacjaIn urban areas, adjacent structures can be seen in any insufficient distance from each other, because of economic reasons and refusal of acquired minimum separation distance according to seismic previsions. Collapse capacity assessment of structures is one of the important objectives of performance-based seismic engineering. The purpose of this study is to consider the pounding phenomenon and P-Delta effect in seismic collapse...
-
Effect of oxygenation time on signal of a sensor based on ionic liquids
PublikacjaThe paper presents an oxygen sensor based on ionic liquids and solid electrodes. The following ionic liquids have been employed: [BMIM][BF4], [HMIM][Cl], [BMIM][N(CN2)]. Minimum time of the sensor exposure to analyte, after which the signal (current intensity) was stable, has been evaluated. An impact of volumetric flow rate of analyte on the sensor exposure time and signal has been determined. A product of permeability coefficient...
-
Interrelated shape memory and Payne effect in polyurethane/graphene oxide nanocomposites
PublikacjaWe report the fabrication of graphene oxide (GO) based polyurethane (PU) nanocomposites by a simple method of mixing and their shape memory properties at different temperatures. Both the polymer and the filler were synthesized in the laboratory by simple and easy methods – PU by pre-polymer method and GO by improved graphene oxide synthesis method. High molecular level dispersion of GO platelets within the PU matrix and thus good...
-
The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
PublikacjaIn this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase....
-
Application of the Barkhausen effect probe with adjustable m agnetic field direction for stress state determination in the P91 ste el pipe
PublikacjaThe paper presents the results of application of a novel Barkhausen effect (BE) probe with adjustable magnetizing field direction for the stress level evaluation in ferromagnetic materials. The investigated sample was in a form of a pipe, made of P91 steel that was anisotropic due to the production process. The measurements were performed before and after welding, revealing the influence of welding process on the residual stress...
-
Plasma nonlinearities and terahertz detection by Field Effect Transistors
Publikacja -
The Effect of a Rotating Magnetic Field on the Regenerative Potential of Platelets
Publikacja -
Progress in the post weld residual stress evaluation using Barkhausen effect meter with a novel rotating magnetic field probe
PublikacjaWe report the progress in post weld residual stress evaluation using Barkhausen effect (BE) meter with rotating magnetic field probe. The novel probe of the BE meter contains two C-core electromagnets and searching coil with ferrite antenna. This meter allows automatic measurements of BE intensity envelopes at different angles of magnetizing field. The full process of measurement at given position of the probe takes about only...
-
Effect of Synthesis Parameters of Graphene/Fe2O3 Nanocomposites on Their Structural and Electrical Conductivity Properties
Publikacja