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Wyniki wyszukiwania dla: Thin films morphology
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SEM micrographs of morphology evolution of V2O5 thin films on quartz glass
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the morphology of the films dependent on the annealing temperature.
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SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films were deposited on a silicon and quartz glass substrate and were annealing at 1000°C under an argon atmosphere.
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
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The AFM micrographs of vanadium oxides thin films deposited on quartz glass - the influence of the thickness of the thin film on its morphology
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a quartz glass substrate and were...
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C dependent on film thickness
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (2-3 AsP layers) were deposited on a silicon substrate and were annealing at 1000°C under an argon...
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Morphology of the sol-gel derived LTO:Cu films
Dane BadawczeMorphology of the lithium titanate doped by Cu thin films were investigated by SEM microscope. Films were deposited by spin-coater from sol-gel derived sol. SEM images showed a high porous structure, tipaciall for sol-gel based films. For measurements samples with a various content of Cu were selected.
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Luminescence of TeO2:Eu thin films
Dane BadawczeTellurium dioxide doped by europium thin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was...
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Optical transmission of the Niobium thin films
Dane BadawczeNiobium thin films with a thickness of 200nm were deposited n a Corning glass substrate by magnetron sputtering method. The optical transmission spectra in a visible light range were.recorded. Investigations showed a good optical transmission thru the layers for each samples, annealed at various temperatures. For measurements samples annealed at 500,...
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Structural investigations of the LTO:Cu thin films
Dane BadawczeLithium titanate (Li1+xTi2-xO4) doped with Cu2+ ions was synthesized by sol-gel processing method. The structure was characterized by X-ray Diffraction (XRD). All samples revealed presence of LTO spinel phase. X-ray pattern of undoped LTO was free of any impurities and other crystal phases. Similarly, samples with low amount of copper dopant (x = 0.05...
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XRD investigations of the lithium titanate thin films
Dane BadawczeNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing temperature on as-prepared films crystallization, the coatings were heated at temperature from 500 °C up to 600 °C for 20h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible...
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Electrical measurements of the dewetting of metal thin films
Dane BadawczeIn situ observations of dewetting of thin films is very complicated. One of the method, that helps to observe it, could be electrical measurements. For experiments, thin gold, silver and gold-silver nanoalloy films were deposited by magnetron sputtering method. Films were deposited on a Corning glass substrates. Samples were measured by four point method...
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Luminescence properties of TeOx-Eu thin films
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Tb thin films
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Dy thin films
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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XRD analysis of the tellurium dioxide thin films
Dane BadawczeTellurium dioxide thin films were deposited by magnetron sputtering method. The XRD analysis of the films annealed at 200, 500, 650 and 700 celsius degree showed appearing of crystalline phase in a higher temeratures.
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Analysis of the electrical parameters of the LTO thin films
Dane BadawczeLithium titanate thin films were derived by sol-gel technique. Films with thickness ca. 800 nm were annealed for various time, in a range of 10h-80h at 550 deg. Electrical conductivity in a wide range of temperature was measured.
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Structural analysis of the tellurium dioxide thin films
Dane BadawczeTeO2 thin films were deposited by magnetron sputtering method. After deposition, amorphous samples were annealed at various temperatures. Influence of annealing temperature on a presence of crystalline phase was investigated.
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Optical properties of tellurium dioxide thin films
Dane BadawczeTeO2 and TeO2 doped by Eu thin films manufactured by magnetron sputtering method were measured by optical spectroscopy. Metallic Te target and Te-Eu mosaic target with diameter of 50.8 mm were sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate...
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Structural investigations of the Al2O3 ultra thin films
Dane BadawczeUltra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2...
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Chemical investigation of the Al2O3 ultra-thin films
Dane BadawczeUltra-thin layers of oluminum oxide (Al2O3) were deposited by ALD method. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina...
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SEM micrographs of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin film morphology dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h. The results show that the morphology of...
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TEM and EDX study of the Al2O3 ultra thin films
Dane BadawczeThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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XRD patterns of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the XRD patterns of the V2O5 thin film structure dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h.
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XRD patterns of V2O5 thin films deposited on silicon substrate
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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XRD patterns of V2O5 thin films deposited on quartz glass
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the structure of the films dependent on the annealing temperature.
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Impedance spectroscopy of the lithium titanate doped by copper thin films
Dane BadawczeLithium titanate doped by copper thin films were derived by sol-gel method. Prepared gel was deposited by spin-coating technique. Samples with various content of Cu were measured by impedance spectroscopy method in a wide range of temperature, from -120 up to 150 deg.
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Optical measurements of LTO:Cu sol-gel derived thin films
Dane BadawczeLithium titanate doped by copper thin films were manufactured by chemical, sol-gel method. Flms were deposited on a Corning glass substrated by spin coater. To calculated optical band gap and other optcal parameters, UV-VIS spectroscopy measurements were performed. For measurements selected samples with various content of Cu.
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Substrate characterization in a electrochemically derived Manganium-Cobaltium thin films
Dane BadawczeManganium-Cobaltium thin films were electrochemically deposited on a Ni foams subsrates in a one-step process at −1.1 V vs. Ag/AgCl in an aqueous solution of differently concentrated Mn(NO3)2·4H2O and Co(NO3)2·6H2O with the deposition time limited by charges of 60, 120, and 200 mC at 25 °C. The concentration ratios of Mn(NO3)2·4H2O to Co(NO3)2·6H2O...
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The AFM micrographs of vanadium oxides thin films obtained at 800°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on a silicon substrate and vanadium thin films were obtained by annealing as-prepared films at...
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The AFM micrographs of vanadium oxides thin films obtained at 1200°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 400°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 600°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of of vanadium oxides thin films obtained at 300°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxide thin films obtained at 100°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 150°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 200°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 450°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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Structure and optical measurements of Eu doped tellurium oxide thin films
Dane BadawczeThin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was examined by X-ray diffraction method. ...
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Luminescence properties of TeOx thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised...
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Optical measurements of lithium titanate sol-gel derived thin films
Dane BadawczeNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin...
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XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
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XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
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Graphene oxide thin films deposited on a PCB board - chemical analysis
Dane BadawczeGraphene oxides based films were measured by X-ray photoemission spectroscopy (XPS) method. TheXPS measurements were carried out with the Omicron NanoTechnology UHV equipment. The hemispherical spectrophotometer was equipped with a 128-channel collector. The XPS measurements were performed at room temperature at a pressure below 1.1 × 10−8 mBar. The...
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Luminescence properties of TeOx-Dy thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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Luminescence properties of TeOx-Tb thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Eu thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method
Dane BadawczeThin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...