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Wyniki wyszukiwania dla: power transistors
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublikacjaA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublikacjaW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublikacjaThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublikacjaGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublikacjaUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublikacjaThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublikacjaAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
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The PWM current source inverter with IGBT transistors and multiscalar model control system
PublikacjaW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublikacjaWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
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Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
PublikacjaThis paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching,...
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A Supramolecular Approach to Enhance the Optoelectronic Properties of P3HT-b-PEG Block Copolymer for Organic Field-Effect Transistors
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SiC-Based Power Electronic Traction Transformer (PETT) for 3 kV DC Rail Traction
PublikacjaThe design of rolling stock plays a key role in the attractiveness of the rail transport. Train design must strictly meet the requirements of rail operators to ensure high quality and cost-eective services. Semiconductor power devices made from silicon carbide (SiC) have reached a level of technology enabling their widespread use in traction power converters. SiC transistors oering energy savings, quieter operation, improved reliability...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublikacjaThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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SiC-based T-type modules for multi-pulse inverter with coupled inductors
PublikacjaThe paper presents SiC-based three-level T-type modules designed for a high-performance 30kVA DC/AC inverter operating at high frequency 85 kHz with low THD of the output voltage. This inverter system consists of two integrated parts. The first part is active and contains three parallelconnected three-phase T-type modules built with fast-switching SiC power transistors. The second, passive part of the system is a set of inductors...
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Analytical Estimation of Power Losses in a Dual Active Bridge Converter Controlled with a Single-Phase Shift Switching Scheme
PublikacjaMicro-grid solutions around the world rely on the operation of DC/DC power conver- sion systems. The most commonly used solution for these topologies is the use of a dual active bridge (DAB) converter. Increasing the efficiency and reliability of this system contributes to the improvement in the stability of the entire microgrid. This paper discussed an analytical method of energy efficiency and power loss estimation in a single...
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A 0.5 V Nanowatt Biquadratic Low-Pass Filter with Tunable Quality Factor for Electronic Cochlea Applications
PublikacjaA novel implementation of an analogue low-power, second-order, low-pass filter with tunable quality factor (Q) is presented and discussed. The filter feature is a relatively simple, buffer-based, circuit network consisting of eleven transistors operating in a subthreshold region. Q tuning is accomplished by injecting direct current into a network node, which changes the output resistance of the transistors and, as a result, modifies...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublikacjaThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublikacjaExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
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Modelling and analysis of medium frequency transformers for power converters
PublikacjaThe evolutions in power systems and electric vehicles, related to the economic opportunities and the environmental issues, bring the need of high power galvanically isolated DC-DC converter. The medium frequency transformer (MFT) is one of its key components, enabled by the increasing switching frequency of modern power semiconductors like silicon carbide transistors or diodes. The increased operating frequency offers small...
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A High-Efficient Low-Voltage Rectifier for CMOS Technology
PublikacjaA new configuration of rectifier suiting CMOS technology is presented. The rectifier consists of only two nchannel MOS transistors, two capacitors and two resistors; for this reason it is very favourable in manufacturing in CMOS technology. With these features the rectifier is easy to design and cheap in production. Despite its simplicity, the rectifier has relatively good characteristics, the voltage and power efficiency, and...
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Przegląd metod monitorowania stanu technicznego tranzystorów mocy
PublikacjaW artykule przedstawiono kilka metod monitorowania stanu technicznego tranzystorów mocy, które są lub mogą być wbudowane w układy przekształtnikowe. Celem artykułu jest określenie aktualnego stanu badań na ten temat. Prezentowane metody przeznaczone są do monitorowania istotnych objawów starzenia modułów mocy: rozwarstwiania struktury modułu na skutek termomechanicznego zmęczenia stopu lutowniczego, uszkodzeń połączeń drutowych...
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Highly linear CMOS triode transconductor for VHF applications
PublikacjaA high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback...
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Wielopoziomowy przekształtnik trakcyjny SiC z izolacją od sieci 3kV DC realizowaną za pomocą transformatorów 30kHz do napędów EZT
PublikacjaW referacie przedstawiono wielopoziomowy izolowany kaskadowy przekształtnik DC-AC z tranzystorami SiC MOSFET 1,2kV, przeznaczony do napędów elektrycznych zespołów trakcyjnych (EZT). Zaproponowana konstrukcja przekształtnika, przeznaczonego do pracy przy zasilaniu z sieci trakcyjnej 3kV DC, spełnia założenia energoelektronicznego transformatora trakcyjnego (z ang. Power Electronic Traction Transformer). Budowa modułowa z niskonapięciowych...
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Multi-pulse VSC arrangements with coupled reactors
PublikacjaThis paper presents a novel approach to the multipulse VSC (Voltage Source Converter) arrangements based on several conventional inverter modules connected in parallel by using coupled reactors. This solution reduces the THD of the output voltage, despite the low switching frequency of transistors. The advantage of the proposed solution is also a relatively small rated power of the reactors. Proposed new arrangements for different...
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Charakterystyka tranzystorów z węglika krzemu w wysokosprawnych przekształtnikach
PublikacjaPółprzewodnikowe przyrządy mocy z węglika krzemu (SiC) osiągnęły poziom technologiczny umożliwiający powszechne stosowanie w układach przekształtnikowych. W artykule omówiono ostatnie osiągnięcia dotyczące układów przekształtnikowych z przyrządami z węglika krzemu oraz wybrane wyniki badań realizowane na Politechnice Gdańskiej. W artykule opisano właściwości statyczne i dynamiczne tranzystorów MOSFET i JFET z węglika krzemu oraz...
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublikacjaA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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Piotr Płotka dr hab. inż.
OsobyPiotr Płotka otrzymał tytuł zawodowy magistra inżyniera w 1976 r., a stopień doktora w dyscyplinie elektronika w 1985 r. – nadane przez Wydział Elektroniki Telekomunikacji i Informatyki Politechniki Gdańskiej. W 2008 r. otrzymał stopień doktora habilitowanego, także w dyscyplinie elektronika, nadany przez Instytut Technologii Elektronowej w Warszawie. Od 1977 r. pracował w Akademii Techniczno-Rolniczej w Bydgoszczy, a od 1981...
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Technique to improve CMRR at high frequencies in CMOS OTA-C filters
PublikacjaIn this paper a technique to improve the common-mode rejection ratio (CMRR) at high frequencies in the OTA-C filters is proposed. The technique is applicable to most OTA-C filters using CMOS operational transconductance amplifiers (OTA) based on differential pairs. The presented analysis shows that a significant broadening of CMRR bandwidth can be achieved by using a differential pair with the bodies of transistors connected to...
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Ladder-Based Synthesis and Design of Low-Frequency Buffer-Based CMOS Filters
PublikacjaBuffer-based CMOS filters are maximally simplified circuits containing as few transistors as possible. Their applications, among others, include nano to micro watt biomedical sensors that process physiological signals of frequencies from 0.01 Hz to about 3 kHz. The order of a buffer-based filter is not greater than two. Hence, to obtain higher-order filters, a cascade of second-order filters is constructed. In this paper, a more...
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Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors
PublikacjaThis paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscilla-tors as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip imple-mentation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability...
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Failure analysis of a high-speed induction machine driven by a SiC-inverter and operating on a common shaft with a high-speed generator
PublikacjaDue to ongoing research work, a prototype test rig for testing high-speed motors/generators has been developed. Its design is quite unique as the two high- speed machines share a single shaft with no support bearings between them. A very high maximum operating speed, up to 80,000 rpm, was required. Because of the need to minimise vibration during operation at very high rotational speeds, rolling bearings were used. To eliminate...
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Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response
PublikacjaIn this paper, a low-voltage low-dropout analog regulator (ALDO) based on a native n-channel MOS transistor is proposed. Application of the native transistor with the threshold voltage close to zero allows elimination of the charge pump in low-voltage regulators using the pass element in a common drain configuration. Such a native pass transistor configuration allows simplification of regulator design and improved performance,...
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The standard radiated immunity test of an astable multivibrator at a normative field strength
Dane BadawczeThe dataset presents a result of measurements that are a part of electromagnetic field immunity tests. The radiated, radio frequency, immunity tests were carried out for a typical astable electronic multivibrator. Tests of immunity of electronic systems to radiated radio frequency (RF) disturbances in the frequency range from 80 MHz to 1 GHz are performed...
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Przegląd systemów ładowania elektrycznych osobowych pojazdów i koncepcja dwukierunkowej ładowarki pokładowej
PublikacjaAktualnie trwa intensywny rozwój pojazdów elektrycznych (EV) i hybrydowych typu plug-in (PHEV) z pokładowymi bateriami akumulatorów. Badania w tej dziedzinie skupiają się na maksymalizowaniu sprawności oraz minimalizowaniu masy i objętości systemów ładowania baterii. W artykule przedstawiono podział systemów ładowania osobowych pojazdów typu EV/PHEV. Opisano systemy ładowania przewodowego z podziałem na ładowarki pokładowe i zewnętrzne, systemy...
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RECENT ADVANCES IN GRAPHENE APPLICATION FOR ELECTRONIC SENSING
PublikacjaThe great interest in graphene is caused by its potential for constructing various sensors exhibiting excellent parameters. The high carrier mobility and the unique band structure of graphene makes it promising especially in the field-effect transistors (GFET) applications. In this article, recent advances of the selected graphene-based sensor applications were presented and the possible directions for further investigations were...
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Generation-recombination and 1/f noise in carbon nanotube networks
PublikacjaThe low-frequency noise is of special interest for carbon nanotubes devices, which are building blocks for a variety of sensors, including radio frequency and terahertz detectors. We studied noise in as-fabricated and aged carbon nanotube networks (CNNs) field-effect transistors. Contrary to the majority of previous publications, as-fabricated devices demonstrated the superposition of generation-recombination (GR) and 1/f noise...
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Method of sacrificial anode dual transistor-driving in stray current field
PublikacjaIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
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A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublikacjaThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
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Sudden death of effective entanglement
PublikacjaSudden death of entanglement is a well-known effect resulting from the finite volume of separable states. We study the case when the observer has a limited measurement capability and analyze the effective entanglement (i.e., entanglement minimized over the output data). We show that in the well-defined system of two quantum dots monitored by single-electron transistors, one may observe a sudden death of effective entanglement when...
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Indirect Measurement of Motor Current Derivatives in PMSM Sensorless Drives
PublikacjaMotor current derivatives contain useful information for control algorithms, especially in sensorless electric drives. The measurement of motor current derivatives in electric motors supplied by voltage source inverter can be performed using di/dt transducers. However, in such a solution additional sensors have to be installed, e.g. Rogowski coils. Another approach is to measure current derivatives indirectly – by oversampling...
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Sensorless IPMSM drive with rotor position estimator based on analysis of phase current derivatives
PublikacjaThis paper describes a sensorless Interior Permanent Magnet Synchronous Motor (IPMSM) drive designed for traction applications. Wide-speed sensorless operation is provided with the use of three methods of rotor position estimation designed for: a standstill, low- and high-speed range. The paper focuses on the high-speed estimation algorithm. The estimator uses the derivatives of motor phase currentsresulting from PWM modulation...
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Optimized Space Vector Modulation strategy for five phase voltage source inverter with third harmonic injection
PublikacjaThis paper presents a simple and an effective SVM algorithm for five-phase Voltage-Source Inverters with the possibility to control independently the voltage vectors for fundamental and auxiliary orthogonal subspaces. The essential benefit is that output voltage is generated using only four active voltage vectors with limited numbers of switching. In the proposed solution, four active vectors are arbitrary chosen, independent of...
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Common-Mode Voltage and Bearing Currents in PWM Inverters: Causes, Effects and Prevention
PublikacjaIn modern induction motor drives an increase of transistors' switching frequency and a decrease of switching times are the sources of some serious problems. The high dv/dt and the common mode voltage generated by the inverter PWM control results in the appearances of bearing currents, shaft voltages, motor terminal overvoltages, the decrease of motor efficiency, and electromagnetic interference. The aspects of common mode (CM)...
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GaAs ballistic and tunneling nanodevices for terahertz electronics and medical applications
PublikacjaPrzy użyciu selektywnej epitaksji warstw molekularnych (MLE) wytworzono w GaAs balistyczne i tunelowe tranzystory o indukcji elektrostatycznej (SIT), z kanałami w skali 10 nm. Szacowany czas przelotu elektronów jest krótszy od 2×10-14 s. Metoda MLE została również wykorzystana do wykonania diod generacyjnych TUNNETT działających w oparciu o czas przelotu i tunelowe wstrzykiwanie elektronów. Z użyciem diod TUNNETT wygenerowano częstotliwość...
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Bezczujnikowe sterowanie trakcyjnym silnikiem IPMSM małej mocy
PublikacjaThis paper describes an algorithm for estimation of IPMSM angular rotor position. The algorithm uses derivatives of motor phase currents resulting from PWM modulation to obtain the rotor position. Control of the IPMSM electromagnetic torque requires a precise estimation of the rotor angular position throughout the wide speed range. This involves using a set of estimation methods switched with the dependence on the actual rotor...
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Multiple output CMOS current amplifier
PublikacjaIn this paper the multiple output current amplifier basic cell is proposed. The triple output current mirror and current follower circuit are described in detail. The cell consists of a split nMOS differential pair and accompanying biasing current sources. It is suitable for low voltage operation and exhibits highly linear DC response. Through cell devices scaling, not only unity, but also any current gains are achievable. As...
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Structural and electronic properties of diamond-composed heterostructures
PublikacjaDiamond is a promising material for 21st century electronics due to its high thermal and electronic conductivity, biocompatibility, chemical stability, high wear resistance, and possibility of doping. However, the semiconductor properties of diamond, especially free-standing films, have not been fully explored. Nor have their integration with polymers and fragile materials and their applications as electronic components. In this...
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Paweł Derkacz
OsobyPawel B. Derkacz was born in Miastko, Poland, in 1993. He received the B.Sc. and M.Sc. degrees in electrical engineering from the Gdansk University of Technology (GUT), Gdansk, Poland, in 2016 and 2017, respectively. In October 2017, he joined the Faculty of Electrical and Control Engineering at GUT Gdansk. In June 2019, he joined the Grenoble Electrical Engineering Laboratory (G2Elab) at Grenoble Institute of Technology (Grenoble...