Filtry
wszystkich: 2644
wybranych: 229
-
Katalog
- Publikacje 2333 wyników po odfiltrowaniu
- Czasopisma 1 wyników po odfiltrowaniu
- Osoby 48 wyników po odfiltrowaniu
- Projekty 2 wyników po odfiltrowaniu
- Zespoły Badawcze 1 wyników po odfiltrowaniu
- Kursy Online 27 wyników po odfiltrowaniu
- Wydarzenia 3 wyników po odfiltrowaniu
- Dane Badawcze 229 wyników po odfiltrowaniu
Filtry wybranego katalogu
Wyniki wyszukiwania dla: PARTICULATE SUBSTRATE
-
The AFM micrographs of gold nanoparticles on silicon substrate
Dane BadawczeThe dataset contains the first approach towards AFM topographic imaging of gold nanoparticles synthesized and immobilized on the silicon surface. Measurements were made in the semi-contact mode on the NTEGRA Prima device, manufactured by NT-MDT. Scans were performed with amplitude detection at an operating value of 60% of the free oscillation amplitude....
-
Temperature of formation of Au nanostructures
Dane BadawczeNanostructures were obtained via annealing of thin Au films. In order to determine possible nanoislands formation mechanisms, dependence on initial film thickness was examined. For the surface morphology studies, nanograin structure and chemical composition analysis, SEM, HR TEM and EDS measurements were performed, respectively. Morphology studies shown...
-
VAT rates in particular member states of the European Union in 2015
Dane BadawczeUnder European Union law, the minimum standard rate of VAT that Member States can apply is 15%. An upper limit has not been specified. Despite attempts to harmonize the value added tax rates, the range of tax rates applied between countries is large. Currently, Luxembourg uses the lowest standard rate (15%), and Hungary uses the highest (27%). Due to...
-
Interface diffusion between metallic nanoparticles and silicon substrate
Dane BadawczeInterface diffusion between metallic nanoparticles and silicon substrate was detected by EDX method. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
-
Mechanical lithography in a polymer substrate using AFM in contact mode
Dane BadawczeMechanical lithography in a polymer substrate. Contact mode. NTEGRA Prima (NT-MDT) device. NSG 01 probe.
-
XRD patterns of V2O5 thin films deposited on silicon substrate
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
-
Substrate characterization in a electrochemically derived Manganium-Cobaltium thin films
Dane BadawczeManganium-Cobaltium thin films were electrochemically deposited on a Ni foams subsrates in a one-step process at −1.1 V vs. Ag/AgCl in an aqueous solution of differently concentrated Mn(NO3)2·4H2O and Co(NO3)2·6H2O with the deposition time limited by charges of 60, 120, and 200 mC at 25 °C. The concentration ratios of Mn(NO3)2·4H2O to Co(NO3)2·6H2O...
-
Depth XPS profile of Fe-S layers on a titanium substrate
Dane BadawczeDepth XPS profile of Fe-S layers on a titanium substrate was measured. Material was etched by Argon ion gun and measured by XPS method. For each sample, three times per 10 minutes each was sputtered.
-
XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
-
SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
-
Morphology and structure of V2O5 nanorods deposited on the silicon substrate after reduction
Dane BadawczeThe DataSet contains the XRD patterns and SEM micrographs of V2O5 nanorods on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C for 40 under a reducing atmosphere (94% Ar, 6% H2).
-
XRD patterns of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the XRD patterns of the V2O5 thin film structure dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h.
-
SEM micrographs of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin film morphology dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h. The results show that the morphology of...
-
SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
-
Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
-
SEM analysis of the TiO2 layers deposited on a FTO substrates
Dane BadawczeTitanium dioxide layers were deposited on a FTO conducting glass by sol-gel method. For sol gel synthesis butoxy titanium and ethanol were used as a reagents. Samples were sintered in a furnace at temperature of 600 deg. SEM measurements were performed by FEI Quanta FEG250 microscope. SEM images of a cross-section of samples exhibit a porous structures...
-
The AFM micrographs of isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the atomic force microscope images of isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 20 to 90 seconds
-
XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
XRD patterns of vanadium oxide nanostructures on quartz glass substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on quartz glass substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
Analytical and reliability data from the real-time simulator biogas plant
Dane BadawczeThe dataset represents the results of biogas plant simulation. The described plant is an agricultural biogas system, which can produce electrical energy with power estimated up to 1070 kW and heat energy that can reach 1200 kW simultaneously.
-
Income obtained according to particular rates only by taxpayers conducting non-agricultural business activity in 2016
Dane BadawczeA special form of income taxation addressed to the SME sector is the Lump sum on registered income, which is a simplified form of income tax payment for natural persons conducting business activity.The choice of this form of taxation is optional. In 2016, the tax in this form could be paid by taxpayers who in 2015 obtained income from non-agricultural...
-
Income obtained according to particular rates only by taxpayers conducting non-agricultural business activity 2015
Dane BadawczeTaxation in the form of a lump sum on recorded revenues does not apply to certain types of activity, regardless of their size. We are talking about taxpayers who achieve revenue in whole or in part, among others from on account of running pharmacies, activities in the field of buying and selling foreign exchange values, activities in the field of trade...
-
X-Ray diffraction of the metallic nanostructures
Dane BadawczeMetallic nanostructures (gold and silver) were manufactured as a thermal annealing of gold or silver thin film. Gold films with thickness of 2.8 nm were deposited on a silicon substrates using a table-top dc magnetron sputtering coater (EM SCD 500, Leica), equipped with quartz microbalance for in-situ thickness measurements. Films were deposited from...
-
Polyacrylamide substrate viscosity impact on temozolomide activity in glioblastoma cells by flow cytometry and rheological measurements
Dane BadawczeDataset includes raw data on cell lines LN-229 and LN-18 treated with temozolomide measured by flow cytometry, rheometry and cell projections. It also includes calculations necessary for creation of figures and conclusions based on those figures in the publication titiled: "Substrate viscosity impairs temozolomide-mediated inhibition of glioblastoma...
-
Oxygen partial pressure and temperature dependence of Gerischer element of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of Gericher element at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C)and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent circuit...
-
Oxygen partial pressure and temperature dependence of series resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of series resistance (R) at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of series resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element series resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
SEM images of tge gold nanostructures on silicon
Dane BadawczeAu nanostructures were prepared on Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air Products 99.999%)....
-
Oxygen partial pressure and temperature dependence of low frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of low frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of middle frequency capacitance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of middle frequency capacitance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of low frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of low frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
Oxygen partial pressure and temperature dependence of middle frequency resistance of symmetrical porous Sr0.86Ti0.65Fe0.35O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of middle frequency resistance at different temperatures (800 °C, 750 °C, 700 °C, 650 °C and 600 °C) and oxygen partial pressures (20%, 10%, 5%, 1%, 0.1% and 0.01% pO2) of symmetrical Sr0.86Ti0.65Fe0.35O3 electrode sintered at 1000 °C. This values were obtained by fitting each measured impedance spectra by electrical equivalent...
-
SEM images of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.30Fe0.70O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
-
SEM images of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.65Fe0.35O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
-
Results of SEM examination of chitosan/Eudragit E 100 coatings electrophoretically deposited on the Ti grade 2 substrate
Dane BadawczeThe database contains the images of the microstructure of the coatings observed with the SEM scanning electron microscope. The chitosan/Eudragit E 100 coatings deposited on the Ti grade 2 substrate by an electrophoresis process were tested. Different process parameters like Eudragit E 100 concentration (0.25 g and 0.5 g in 100 mL of 1% (v/v) acetic...
-
SEM images of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi0.50Fe0.50O3-d electrode and CGO-20 substrate in function of sintering temperature (800 °C, 900°C and 1000 °C) . Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage...
-
Oxygen partial pressure and temperature dependence of R-CPE1 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE2 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
-
Oxygen partial pressure and temperature dependence of R-CPE1 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE1 frequency of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE1 frequency at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE2 resistance of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 resistance at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Oxygen partial pressure and temperature dependence of R-CPE2 capacity of symmetrical porous SrTi0.30Fe0.70O3 electrode on CGO substrate
Dane BadawczeThis dataset contains values of equivalent circuit element R-CPE2 capacity at different temperatures (800 °C, 700 °C, 600 °C and 500 °C) and oxygen partial pressures (100%, 80%, 50% 30%, 20%, 15%, 10%, 5%, 2.5%, 1%, and 0.3% pO2) of symmetrical SrTi0.30Fe0.70O3 electrode sintered at 800 °C. This values were obtained by fitting each measured impedance...
-
Formation of gold anostructures detected by SEM microscope
Dane BadawczeGold nanostructures were prepared on silicon - Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air...
-
SEM images of symmetrical cell interface with SrTi1-xFexO3-d electrodes and CGO-20 substrate sintered at 800 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with SrTi1-xFexO3-d (x=0.35; 0.50; 0..70) electrodes and CGO-20 substrate sintered at 800 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage of 12 kV in a high vacuum...
-
TEM and EDX study of the Al2O3 ultra thin films
Dane BadawczeThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
-
Exemplary SEM images of polished cross sections of symmetrical cell with SrTi0.50Fe0.50O3-d electrodes and CGO-20 substrate sintered at 800 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell with SrTi0.50Fe0.50O3-d electrodes and CGO-20 substrate sintered at 800 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating voltage of 12 kV in a high vacuum mode.
-
SEM images of symmetrical cell interface with Sr1.05Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr1.05Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
-
SEM images of symmetrical cell interface with Sr0.90Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr0.90Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...
-
SEM images of symmetrical cell interface with Sr0.95Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at 800 °C, 900 °C and 1000 °C
Dane BadawczeThis dataset contains images of polished cross section of symmetrical cell interface with Sr0.95Ti0.30Fe0.70O3-d electrodes and CGO-20 substrate sintered at three different temperatures 800 °C, 900 °C and 1000 °C. Images were obtained using a PhenomXL (Thermo Fisher Scientific, the Netherlands) scanning electron microscope (SEM) with an accelerating...