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Search results for: gan power transistors
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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GaN/AlGaN based transistors for terahertz emitters and detectors
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Sub-terahertz detection by fin-shaped GaN/AlGaN transistors
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Terahertz imaging with GaAs and GaN plasma field effect transistors detectors
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Low frequency noise and trap density in GaN/AlGaN field effect transistors
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Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
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Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics
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Electrical and noise properties of graphene gate fin-shaped GaN/AlGaN field effect transistors for high frequency electronics
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublicationW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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Przegląd systemów ładowania elektrycznych osobowych pojazdów i koncepcja dwukierunkowej ładowarki pokładowej
PublicationAktualnie trwa intensywny rozwój pojazdów elektrycznych (EV) i hybrydowych typu plug-in (PHEV) z pokładowymi bateriami akumulatorów. Badania w tej dziedzinie skupiają się na maksymalizowaniu sprawności oraz minimalizowaniu masy i objętości systemów ładowania baterii. W artykule przedstawiono podział systemów ładowania osobowych pojazdów typu EV/PHEV. Opisano systemy ładowania przewodowego z podziałem na ładowarki pokładowe i zewnętrzne, systemy...
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Arsalan Muhammad Soomar Doctoral Student
PeopleHi, I'm Arsalan Muhammad Soomar, an Electrical Engineer. I received my Master's and Bachelor's Degree in the field of Electrical Engineering from Mehran University of Engineering and Technology, Jamshoro, Sindh, Pakistan. Currently enrolled as a Doctoral student at the Gdansk University of Technology, Gdansk, Poland. Also worked in Yellowlite. INC, Ohio as a Solar Design Engineer. HEADLINE Currently Enrolled as a Doctoral...
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Piotr Płotka dr hab. inż.
PeoplePiotr Płotka received the M.Sc. and D.Eng. degrees in electronic engineering from the Gdansk University of Technology, Poland, in 1976 and 1985. In 2008 he received D.Sc. (Dr.Hab.) degree, also in electronic engineering, from the Institute of Electron Technology at Warsaw, Poland. From 1977 he was with Academy of Technology and Agriculture at Bydgoszcz, Poland and from 1981 with the Gdansk University of Technology. In cooperation...
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Przegląd metod monitorowania stanu technicznego tranzystorów mocy
PublicationW artykule przedstawiono kilka metod monitorowania stanu technicznego tranzystorów mocy, które są lub mogą być wbudowane w układy przekształtnikowe. Celem artykułu jest określenie aktualnego stanu badań na ten temat. Prezentowane metody przeznaczone są do monitorowania istotnych objawów starzenia modułów mocy: rozwarstwiania struktury modułu na skutek termomechanicznego zmęczenia stopu lutowniczego, uszkodzeń połączeń drutowych...
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Wielopoziomowy przekształtnik trakcyjny SiC z izolacją od sieci 3kV DC realizowaną za pomocą transformatorów 30kHz do napędów EZT
PublicationW referacie przedstawiono wielopoziomowy izolowany kaskadowy przekształtnik DC-AC z tranzystorami SiC MOSFET 1,2kV, przeznaczony do napędów elektrycznych zespołów trakcyjnych (EZT). Zaproponowana konstrukcja przekształtnika, przeznaczonego do pracy przy zasilaniu z sieci trakcyjnej 3kV DC, spełnia założenia energoelektronicznego transformatora trakcyjnego (z ang. Power Electronic Traction Transformer). Budowa modułowa z niskonapięciowych...
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Paweł Derkacz
PeoplePawel B. Derkacz was born in Miastko, Poland, in 1993. He received the B.Sc. and M.Sc. degrees in electrical engineering from the Gdansk University of Technology (GUT), Gdansk, Poland, in 2016 and 2017, respectively. In October 2017, he joined the Faculty of Electrical and Control Engineering at GUT Gdansk. In June 2019, he joined the Grenoble Electrical Engineering Laboratory (G2Elab) at Grenoble Institute of Technology (Grenoble...
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Charakterystyka tranzystorów z węglika krzemu w wysokosprawnych przekształtnikach
PublicationPółprzewodnikowe przyrządy mocy z węglika krzemu (SiC) osiągnęły poziom technologiczny umożliwiający powszechne stosowanie w układach przekształtnikowych. W artykule omówiono ostatnie osiągnięcia dotyczące układów przekształtnikowych z przyrządami z węglika krzemu oraz wybrane wyniki badań realizowane na Politechnice Gdańskiej. W artykule opisano właściwości statyczne i dynamiczne tranzystorów MOSFET i JFET z węglika krzemu oraz...
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The standard radiated immunity test of an astable multivibrator at a normative field strength
Open Research DataThe dataset presents a result of measurements that are a part of electromagnetic field immunity tests. The radiated, radio frequency, immunity tests were carried out for a typical astable electronic multivibrator. Tests of immunity of electronic systems to radiated radio frequency (RF) disturbances in the frequency range from 80 MHz to 1 GHz are performed...
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublicationAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublicationWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
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Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublicationW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
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3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
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JOURNAL OF POWER SOURCES
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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
PublicationPoly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters...
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Ryszard Strzelecki prof. dr hab. inż.
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Nuclear Power
e-Learning CoursesNuclear Power is a course for student II degree in full-time studies at Chemistry Faculty, majoring in Green Technology and Monitoring.
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Zbigniew Lubośny prof. dr hab. inż.
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A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications
PublicationWe studied the electronic and magnetic properties of wurtzite GaN (w-GaN) doped with different concentrations of the 4d transition metal ions Nb, Mo, and Ru. We incorporated spin-polarized plane-wave density functional theory within an ultrasoft pseudopotential formalism. The 4d transition metals were doped at different geometrical sites to determine the geometry with the lowest total energy and the one that induced the largest...
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Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
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Janusz Nieznański prof. dr hab. inż.
PeopleJanusz Nieznański born in 1957 in Gdańsk. He received the M.Sc. degree in 1981, the Ph.D. degree in 1990, and the D.Sc. (‘habilitation’) degree in 1999, all from the Gdańsk University of Technology. Since 1981 he has been with the above university, where he is currently Professor of Electrical Engineering. His research and teaching interests include control, diagnostics, modeling and simulation of power electronic converters and...
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Marek Adamowicz dr hab. inż.
PeopleStopień naukowy doktora uzyskał w 2008 r. na Wydziale Elektrotechniki i Automatyki Politechniki Gdańskiej. W latach 2005 – 2011 pracował na Akademii Morskiej w Gdyni. W 2010 r. jako laureat programu NCBR LIDER wybrał Wydział Elektrotechniki i Automatyki Politechniki Gdańskiej jako jednostkę realizującą swój projekt z zakresu szerokopasmowych przyrządów półprzewodnikowych i ich zastosowań w elektrowniach wiatrowych. Od 2011 roku...
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Interior Point Method Evaluation for Reactive Power Flow Optimization in the Power System
PublicationThe paper verifies the performance of an interior point method in reactive power flow optimization in the power system. The study was conducted on a 28 node CIGRE system, using the interior point method optimization procedures implemented in Power Factory software.
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Terahertz imaging by field effect transistors
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Terahertz Plasma Field Effect Transistors
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Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Open Research DataThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
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Robert Bogdanowicz prof. dr hab. inż.
PeopleRobert Bogdanowicz received his Ph.D. degree with honours in Electronics from the Gdansk University of Technology. He worked as a post-doc researcher in Ernst-Moritz-Arndt-Universität Greifswald Institut für Physik. He has initiated optical emission imaging of muti-magnetron pulsed plasma and contributed to the development of antibacterial implant coatings deposited by high-power impulse magnetron sputtering. He moved back to...
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BADANIA EWALUACYJNE TRANZYSTORA 650 V E-HEMT GAN DO ZASTOSOWAŃW WYSOKOSPRAWNYCH PRZEKSZTAŁTNIKACH DC/DC
PublicationTematem artykułu są badania wysokonapięciowegotranzystora z azotku galu typu E-HEMT w aplikacji przekształtnikaobniżającego napięcie typu buck. W pracy przedstawiono krótkącharakterystykę i zalety półprzewodników szerokoprzerwowych,a także opis tranzystora GS66508P-E03 w obudowie do montażupowierzchniowego (SMD). Następnie poruszono problemchłodzenia łącznika mocy SMD i przeprowadzono badanieporównawcze dwóch układów chłodzenia....
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Terahertz detection and emission by field-effect transistors
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Terahertz rectification by graphene field effect transistors
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Power Hardware-in-the-Loop Approach In Power System Development
PublicationThe main objective of the research is the verification of the Power Hardware-In-The-Loop (PHIL) approach in power system analysis and design. The premise of the article is that using PHIL approach the performance of the power system in steady and transient state conditions can be analysed in real power system conditions. Models of induction machine were developed and real time simulations were performed. Simulation variables were...