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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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Noise in semiconductor devices
PublicationOmówiono typowe źródła szumów występujące w przyrządach pólprzewodnikowych, a mianowicie: cieplne, śrutowe, generacyjno-rekombinacyjne, 1/f, 1/f2, wybuchowe (RTS), lawinowe. Przedstawiono szumowe schematy zastępcze tranzystora bipolarnego, JFET i MOSFET oraz opisano wydajności poszczególnych źródeł szumów. Zasugerowano jak dobierać przyrządy półprzewodnikowe do małoszumowych układów w zakresie małych częstotliwości.
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EuroAsia Semiconductor
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Silicon Semiconductor
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MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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Fluctuation phenomena in semiconductor gas sensors
PublicationCzujniki gazu mogą być wytwarzane z cienkiej warstwy półprzewodnika, która po podgrzaniu do odpowiedniej temperatury staje się czuła na gaz. Zjawisko to jest dobrze znane i szeroko opisane w literaturze. Jako wskaźnik detekcji gazu wykorzystuje się zmianę rezystancji stałoprądowej czujnika. Zwiększenie czułości i, co najważniejsze z praktycznego punktu widzenia, selektywności dyskryminacji można uzyskać jeśli warstwa półprzewodnika...
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On the selectivity of nanostructured semiconductor gas sensors
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Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites
PublicationSingle semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting...
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Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites
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Gas sampling system for matrix of semiconductor gas sensors
PublicationSemiconductor gas sensors are popular commercial sensors applied in numerous gas detection systems. They are reliable, small, rugged and inexpensive. However, there are a few problem limiting the wider use of such sensors. Semiconductor gas sensor usually exhibits a low selectivity, low repeatability, drift of response, strong temperature and moisture influence on sensor properties. Sample flow rate is one of the parameters that...
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A new nethod for RTS noise of semiconductor devices identification
PublicationIn the paper, a new method, called the noise scatterin pattern method (NSP method), for random telegraph signal noise identyfication in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are presented.
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Methodology of semiconductor devices classification into groups of differentiated quality
PublicationZaproponowano klasyfikację przyrządów półprzewodnikowych do grup o zróżnicowanej jakości na podstawie ich szumów własnych z zakresu małych częstotliwości. Przedstawiono metodologię umożliwiającą stwierdzenie, czy zaproponowany parametr szumowy X dla danego typu przyrządu półprzewodnikowego może być stosowany do określenia jakości. Sprecyzowano przebieg badań wstępnych bazujących na ocenie wyników pomiarów szumów własnych z zakresu...
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Gas detection in semiconductor sensors using fluctuation phenomena
PublicationRozpatrzono problemy pomiaru szumów, kóre należy rozwiązać, gdy szumy traktuje się jako dodatkowe źródło informacji o gazach. Metoda szumowa (spektroskopia szumów rezystancyjnych, widma wyższych rzędów) daje więcej informacji polepszając czułość i seleKtywność czujnika.
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Identification of inherent noise components of semiconductor devices on an example of optocouplers
PublicationIn the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise...
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Investigation of the temperature modulation parameters on semiconductor gas sensor response
PublicationIn this work we present the results of the investigation of the sensing properties of semiconductor gas sensors with a sinusoidally modulated temperature in the presence of synthetic air (SA) and three volatile air pollutants, i.e. NH3, NO2 and SO2. The measurements were performed for different average sensor heater temperatures and the amplitude of the modulation signal. In addition, the extraction of features from the sensor...
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Journal of Semiconductor Technology and Science
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Bandaoti Guangdian/Semiconductor Optoelectronics
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IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
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Single and Three -Phase PWM AC/AC Converters as Semiconductor Transformers
PublicationAC voltage transformation circuits contain pure or reactance PWM AC/AC converters. These circuits can be treated as AC/AC semiconductor transformers. This paper reviews single-phase and three-phase topologies: both non-isolated and isolated, single as well as two quadrant structure. Additionally, this paper present selected examples of their applications.
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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
PublicationWe report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...
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Effect of Semiconductor Element Substitution on the Electric Properties of Barium Titanate Ceramics
PublicationThe investigated ceramics were prepared by a solid-state reaction from simple oxides and carbonates with the use of a mixed oxide method (MOM). The morphology of BaTi0.96Si0.04O3 (BTSi04) ceramics was characterised by means of a scanning electron microscopy (SEM). It was found that Si+4 ion substitution supported the grain growth process in BT-based ceramics. The EDS results confirmed the high purity and expected quantitative composition...
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Optical theorem helps understand thresholds of lasing in open semiconductor microcavities
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Operation of an ultra short fuse shunted by a semiconductor device: simulation and experiments.
PublicationW artykule przedstawiono ideę działania i wymagane cechy ultraszybkiego bezpiecznika w ograniczniku hybrydowym z równoległym elementem półprzewodnikowym. Eksperyment i modelowanie działanie bezpiecznika przeprowadzono dla spodziewanego prądu zwarciowego 2 kA. Symulacje wykonano przy użyciu programu polowego FLUX. Jego zastosowanie do modelowania ultrakrótkich bezpieczników zostało również przedstawione.
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Noise Scattering Patterns Method for Recognition of RTS Noise in Semiconductor Components
PublicationOpisano nową metodę identyfikacji i wizualizacji szumów RTS. Metoda ta oparta na graficznym przedstawieniu przebiegu szumowego jest szczególnie użyteczna do szybkiej selekcji elektronicznych elementów półprzewodnikowych. Przedstawiono także rezultaty filtacji medianowej szumu zawierającego składową RTS. Filtrację medianową zastosowano do poprawienia obrazu szumu uzyskanego w wyniku zastosowania metody NSP.
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Determination of chlorine concentration using single temperature modulated semiconductor gas sensor
PublicationA periodic temperature modulation using sinusoidal heater voltage was applied to a commercial SnO2 semiconductor gas sensor. Resulting resistance response of the sensor was analyzed using a feature extraction method based on Fast Fourier Transformation (FFT). The amplitudes of the higher harmonics of the FFT from the dynamic nonlinear responses of measured gas were further utilized as an input for Artificial Neural...
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Descriptors to Predict Dye‐Sensitized Semiconductor Based Photocatalyst for Hydrogen Evolution Reaction
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A method of RTS noise identification in noise signals of semiconductor devices in the time domain
PublicationIn the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first)...
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Magnetic semiconductor photocatalysts for the degradation of recalcitrant chemicals from flow back water
PublicationIn the present study treatability of persistent organic compounds from the flow back water after hydrauling fracturing was investigated. The combination of TiO2 photocatalyst and magnetic oxide nanoparticles enhance the separation and recoverable property of nanosized TiO2 photocatalyst. Fe3O4/ TiO2 and Fe3O4@SiO2/TiO2 nanocomposites were prepared by heteroagglomeration. The photocatalysts’ characteristics by X-ray diffractometry...
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Tunable semiconductor laser application for interferometric optical fibersensors.Optical and Electronic Sensors V.
PublicationW pracy przedstawiono metody stabilizacji punktu pracy światłowodowych sensorów interferometrycznych. W metodach tych wykorzystuje się układy regulacji sterujące długością fali przestrajalnego lasera półprzewodnikowego. Przedstawiono tryby pracy układów regulacji oraz problemy związane z ich projektowaniem i realizacją. Przeanalizowano ograniczenia sensorów wykorzystujących powyższe układy. Dokonano weryfikacji eksperymentalnej...
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Semiconductor Devices
e-Learning Courseswesja angielskojęzyczna przedmiotu Przyrządy Półprzewodnikowe dla studentów z programu Erasmus
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Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions
PublicationOrganic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic...
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Techniques of interference reduction in probe system for wafer level noise measurements of submicron semiconductor devices.
PublicationPrzedstawiono skrótowo system do ostrzowych pomiarów szumów struktur submikronowych. Znaczny wpływ na pomiary ostrzowe mają zakłócenia i szumy własne systemu, zwłaszcza zakłócenia o wysokim poziomie wpraowadzane przez ostrza (fluktuacje rezystancji styków ostrza do struktury powodowane przez wibracje i udary mechaniczne w środowisku pomiarowym)i środowisko elektromagnetyczne. Zakłócenia okresowe powodowane przez wibracje i pola...
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Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model
PublicationThis article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore–Gibson–Thompson (MGT) equation of the fourth-order serves as the theoretical framework...
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MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
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Novel Structures and Applications of Graphene-Based Semiconductor Photocatalysts: Faceted Particles, Photonic Crystals, Antimicrobial and Magnetic Properties
PublicationGraphene, graphene oxide, reduced graphene oxide and their composites with various compounds/materials have high potential for substantial impact as cheap photocatalysts, which is essential to meet the demands of global activity, offering the advantage of utilizing “green” solar energy. Accordingly, graphene-based materials might help to reduce reliance on fossil fuel supplies and facile remediation routes to achieve clean environment...
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The use of recycled semiconductor material in crystalline silicon photovoltaic modules production - A life cycle assessment of environmental impacts
PublicationTo offset the negative impact of photovoltaic modules on the environment, it is necessary to introduce a longterm strategy that includes a complete lifecycle assessment of all system components from the production phase through installation and operation to disposal. Recycling of waste products and worn-out systems is an important element of this strategy. As the conclusions from the previous studies have shown, thermal treatment...
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FFT analysis of temperature modulated semiconductor gas sensor response for the prediction of ammonia concentration under humidity interference
PublicationThe increasing environmental contamination forces the need to design reliable devices for detecting of the volatile compounds present in the air. For this purpose semiconductor gas sensors, which have been widely used for years, are often utilized. Although they have many advantages such as low price and quite long life time, they still lack of long term stability and selectivity. Namely, environmental conditions have significant...
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Real-time working gas recognition system based on the array of semiconductor gas sensors and portable computer Raspberry PI
PublicationThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and low-cost alternative for other devices, like gas analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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High resolution X-ray diffractometry and reflectometry of semiconductor nano- and micro- structures based on X-ray refractive optics
PublicationIn this thesis proposed, discussed and studied novel synchrotron X-ray diffractometry and reflectometry methods based on a refractive optics. The experimental results obtained from the ID06 beamline at ESRF, Grenoble, France are presented and analyzed in this work to demonstrate a high angular and space resolution in addition to the opportunity to manage in situ and on operando experiments with the help of proposed X-ray optical...
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Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light
PublicationA novel synthesis process was used to prepare TiO2 microspheres, TiO2 P-25, SrTiO3 and KTaO3 decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD),...
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Oxygen Aspects in the High-Pressure and High-Temperature Sintering of Semiconductor Kesterite Cu2ZnSnS4 Nanopowders Prepared by a Mechanochemically-Assisted Synthesis Method
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CALIBRATION OF LOW ENERGY X-RAY EXPERIMENTAL SETUP WITH STRONGLY FILTERED BEAM USING DATA FROM A SEMICONDUCTOR AND A THERMOLUMINESCENT DETECTORS
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Interferometric optical fiber sensors with active stabilization of the operating point using a tunable semiconductor laser. Optical Fibres and Their Applications VIII.
PublicationW pracy przedstawiono wyniki badań światłowodowych interferometrycznych sensorów siły wykonanych w konfiguracji interferometru Michelsona i wykorzystujących aktywną stabilizację punktu pracy przy pomocy zmiany długości fali źródła. Porównano dwie klasy omawianych sensorów a następnie zrealizowano sensor. W konstrukcji sensora zastosowano modulator z pośrednim pomiarem siły. Mierzona siła jest zamieniana na ciśnienie hydrostatyczne,...
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Impedancje i składowe prądu zaburzeń w obwodach z łącznikami półprzewodnikowymi = Impedances and disturbance current components in the circuits with semiconductor switches
PublicationW referacie przedstawiono pewien sposób określenia impedancji i składowych prądu zaburzeń dla przypadku obwodu z łącznikiem półprzewodnikowym. Określono widmową impedancje obciążenia i impedancje wewnętrzną źródła oraz rozpływy składowych prądu zaburzeń. Zaprezentowano wyniki obliczeń dla pewnego przypadku obwodu. W wnioskach omówiono wpływ przyjętego układu zastępczego źródła zaburzeń oraz częstotliwości charakterystycznej na...
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Effect of band gap on power conversion efficiency of single-junction semiconductor photovoltaic cells under white light phosphor-based LED illumination
PublicationOn the basis of the detailed balance principle, curves of efficiency limit of single-junction photovoltaic cells at warm and cool white light phosphor-based LED bulbs with luminous efficacy exceeding 100 lm/W have been simulated. The effect of energy band gap and illuminance on the efficiencies at warm and cool light is discussed. The simulations carried out show that maximum power conversion efficiency at 1000 lx reaches 52.0%...
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SEMICONDUCTORS+
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Modeling the electrical characteristics of P3HT:PCBM bulk heterojunction solar cells: Influence of the interface recombination
PublicationThe interface recombination of charge carriers located in the material with lower permittivity (Szmytkowski 2009 Chem.Phys.Lett. 470 123) has been implemented for the first time to calculate the electrical characteristics of the donor-acceptor P3HT:PCBM bulk heterojunction solar cell. In order to estimate the photocurrent density in this system, a simple analytical formula has been derived. We have obtained a very good agreement...
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A model of a tunable quantum dot in a semiconducting carbon nanotube
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The photocurrent quantum efficiency dependence on the applied voltage in organic solar cells
PublicationWe demonstrate that our recently reported model (Szmytkowski 2007 J. Phys. D: Appl. Phys. 40 3352) of the photocurrent quantum efficiency in organic semiconductors explains the external quantum efficiency dependence on the electric field in organic solar cells. This effect can be explained by taking into account that the photogeneration of charge carriers occurs via the electron-hole pair dissociation and the space charge effects...