Filters
total: 1686
filtered: 167
-
Catalog
- Publications 1312 available results
- Journals 39 available results
- People 50 available results
- Inventions 6 available results
- Projects 1 available results
- Laboratories 2 available results
- Research Teams 1 available results
- e-Learning Courses 34 available results
- Events 64 available results
- Open Research Data 177 available results
Chosen catalog filters
Search results for: filmy adsorpcyjne
-
SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
-
The AFM micrographs of vanadium oxides thin films obtained at 450°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
-
Optical measurements of lithium titanate sol-gel derived thin films
Open Research DataNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin...
-
XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
-
Luminescence properties of TeOx thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised...
-
XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
-
Graphene oxide thin films deposited on a PCB board - chemical analysis
Open Research DataGraphene oxides based films were measured by X-ray photoemission spectroscopy (XPS) method. TheXPS measurements were carried out with the Omicron NanoTechnology UHV equipment. The hemispherical spectrophotometer was equipped with a 128-channel collector. The XPS measurements were performed at room temperature at a pressure below 1.1 × 10−8 mBar. The...
-
Depth profile of the composition of 8 nm Al2O3 thin film
Open Research Data8 nm layer of aluminum oxide (Al2O3) was deposited by ALD method on a s. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. To investigate the profile of concenration of...
-
Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method
Open Research DataThin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...
-
XRD data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe, annealed in a range from 400 to 900oC
Open Research DataDataset include collected XRD data of (Cr,Fe,Mn,Co,Ni)3O4 high-entropy spinel oxide thin films deposited by spray pyrolysis technique on amorphous SiO2 substrates and annealed from 400 to 900oC. Samples were prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers...
-
Evaluation of the content of zinc compounds in polyethylene films using scanning electron microscopy
Open Research DataThe dataset contains the results of in the form of micrographs made using a scanning electron microscope (SEM) S–3400N (Hitachi, Hyogo, Japan) using backscattered electron (BSE) detector. SEM was equipped with tungsten filament. The accelerating voltage was 25 kV. Utilization of BSE detector allowed to increase the contrast of local areas varying in...
-
Luminescence properties of TeOx-Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
-
Luminescence properties of TeOx-Tb thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
-
Luminescence properties of TeOx-Eu thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
-
The assessment of microbiological antimicrobial properties of PE film loaded with nanozinc filler
Open Research DataThe dataset contains the results of a single series of determinations of the antimicrobial properties against E. coli and S. aureus of polyethylene films containing the nanozinc filler.
-
SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films were deposited on a silicon and quartz glass substrate and were annealing at 1000°C under an argon atmosphere.
-
XRD and electrochemical results for MoO3 films deposited using pulsed laser deposition system
Open Research DataThe attached data contains XRD and electrochemical results for MoO3 films deposited on fluorine-doped tin oxide glasses. Films were deposited using a pulsed laser deposition system at different conditions. Part of the samples was deposited at room temperature and then annealed at 575°C for given times (samples labeled PLD_RT_575C_xmin, where x stands...
-
XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
-
SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
-
SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
-
SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
-
Ultra-thin film of aluminum oxide influence on the plasmon resonance in gold nanostructures
Open Research DataUltra-thin film of aluminum oxide influence on the plasmon resonance in gold nanostructures was measured by UV-VIS spectroscopy. Ultra thin film of Al2O3 was deposited on a gold nanostructures. Thickness of film was 2nm - 8nm. Shift of plasmon resonance was observed, as a result of various dielectric constant of layer.
-
Electrical responses of nanoporous NiO films for light-activated nitrogen dioxide and acetone gas sensing
Open Research DataThe chemoresistive sensor response of nanoporous NiO films prepared by advanced gas deposition was investigated with and without simultaneous light irradiation, to detect nitrogen dioxide and acetone gases. The presented data show electrical responses presented as sensor resistance or relative changes in sensor resistance under selected environment...
-
XPS data of as-grown BDD, as-implanted Mn-BDD, and annealed Mn-BDD thin films
Open Research DataXPS survey spectra and detailed spectra O1, C1s and Mn2p of as-grown BDD, as-implanted Mn-BDD, and annealed Mn-BDD thin films. X-ray photoelectron spectroscopy (XPS) studies were conducted on an Escalab 250 Xi from Thermo Fisher Scientific with an Al Kα radiation. Results were published in the paper ( https://doi.org/10.1002/adfm.202308617)
-
SEM/EDX data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Data set include SEM and EDX results of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited layers were amorphous,...
-
TEM data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Dataset include presentation of summarized TEM investigation of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited...
-
Scanning electron microscopy (SEM) images of boron-doped diamond thin films at poly(lactic acid)
Open Research DataThe dataset contains the photos obtained by scanning electron microscope(SEM), revealing the surface morphology and cross-section of boron-doped diamond electrodes on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm. The top views of...
-
Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
-
Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
-
Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Tm thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Tm thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
-
Luminescence properties of TeOx-1%Eu1.5%Tb2.5%Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-1%Eu1.5%Tb2.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
-
Total electrical conductivity data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis dataset includes electrical conductivity measurements results measured by van der pauw technique up to 900oC.
-
The electrochemical studies of thin boron-doped diamond films deposited at conductive poly(lactic acid) 3D prints
Open Research DataThe dataset contains the electrochemical characteristics of the electrodes composed of thin boron-doped diamond films coated on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm.
-
Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
-
Anomalous anisotropy of deuterium-grown boron-doped diamond and the role of boron-tetramers in the Mott-Insulator transition
Open Research DataWe show anisotropy in the superconductivity for boron-doped diamond thin films prepared with Microwave Plasma Assisted Chemical Vapor Deposition using deuterium-rich plasma. This anomalous phase transition is linked with the emergence of boson quantum entanglement states behaving as a bosonic insulating state. Here, we show that the superconducting...
-
The AFM micrographs of V2O5 single crystals
Open Research DataThe DataSet contains the atomic force microscope images of the surface of V2O5 single crystals. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared films were deposited on a quartz glass substrate and were annealing at 600°C under synthetic air.
-
Formation of gold nanostructures detected by XPS method
Open Research DataGold nanostructers were manufactured by thermal dewetting of thin film. Film with thickness of 2.8 nm was deposited by magnetron sputtering method. As a result of annealing at 550 deg, nanostructures appear. Bulk gold, as-deposited gold film and metallic nanostructures were measured by XPS method.
-
Morphology of the gold nanoislands
Open Research DataDewetting of the thin metallic films leads to formation of an isolated islands. morphology of nanostructures was measured by SEM microscope. Thin gold films with a thickness of 1.2 nm, 1.5 nm and 3.4 nm were anealed at 550, 600 and 650 Celcius degress.
-
Depth XPS profile of vanadium pentoxide
Open Research DataVanadium pentoxide sample was manufactured by sol-gel method and deposited on a substrate by spin coating technique. To determine depth profile of chemical composition of thin film, etching by Argon ion gun was used. Thin film was etched three times. Chemical composition was measured by XPS method.
-
SEM inwestigation of the silver nanostructures
Open Research DataSilver thin films with a thickness of 1nm, 3nm, 5nm, 7nm and 9nm were deposited by a table-top magnetron sputtering unit in a pure argon plasma from a high-purity silver target. Silicon wafers was used as a substrates. As-deposired films were annealed in Ar atmosphere at 550 Celsius degree for 15 minutes.As a result of annealing, Ag nanostructures formed...
-
XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Open Research DataThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
XRD patterns of vanadium oxide nanostructures on quartz glass substrate obtained by V2O5 recrystallization
Open Research DataThe DataSet contains the XRD patterns of vanadium oxide nanostructures on quartz glass substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
Chemical composition of V2O5 nanorods
Open Research DataThe DataSet contains the chemical compositions of the V2O5 nanorods on a silicon substrate. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared thin films were annealed at 600C under a synthetic air atmosphere.
-
SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1000°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1000°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 800°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 800°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1200°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
-
Measurements of AuAg nanostructures
Open Research DataExtensive UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.
-
Processed measurements of AuAg nanostructures
Open Research DataExtensive processed UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.
-
UV-Vis measurements and SEM images of Ag nanostructures
Open Research DataUv-vis and SEM of Ag nanostructures. Structures were obtained by dewetting thin films. Various fabrication conditions i.e. temperature, time of the annealing and thickness of the initial layer were subsequently changed.
-
Oxidation of silver nanostructures
Open Research DataSilver nanostructures were prepared on Si substrate. Thin Ag films (2 and 6 nm thickness) were deposited using a tabletop dc magnetron sputtering coater (EM SCD 500, Leica) in pure Ar plasma. The Ag target was of 99.99% purity, the rate of layer deposition was about 0.4 nm·s−1 , and the incident power was in the range of 30–40 W. The layer thickness...