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Search results for: SEMICONDUCTOR DEVICES
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Noise in semiconductor devices
PublicationOmówiono typowe źródła szumów występujące w przyrządach pólprzewodnikowych, a mianowicie: cieplne, śrutowe, generacyjno-rekombinacyjne, 1/f, 1/f2, wybuchowe (RTS), lawinowe. Przedstawiono szumowe schematy zastępcze tranzystora bipolarnego, JFET i MOSFET oraz opisano wydajności poszczególnych źródeł szumów. Zasugerowano jak dobierać przyrządy półprzewodnikowe do małoszumowych układów w zakresie małych częstotliwości.
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A new nethod for RTS noise of semiconductor devices identification
PublicationIn the paper, a new method, called the noise scatterin pattern method (NSP method), for random telegraph signal noise identyfication in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are presented.
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Methodology of semiconductor devices classification into groups of differentiated quality
PublicationZaproponowano klasyfikację przyrządów półprzewodnikowych do grup o zróżnicowanej jakości na podstawie ich szumów własnych z zakresu małych częstotliwości. Przedstawiono metodologię umożliwiającą stwierdzenie, czy zaproponowany parametr szumowy X dla danego typu przyrządu półprzewodnikowego może być stosowany do określenia jakości. Sprecyzowano przebieg badań wstępnych bazujących na ocenie wyników pomiarów szumów własnych z zakresu...
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Identification of inherent noise components of semiconductor devices on an example of optocouplers
PublicationIn the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise...
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A method of RTS noise identification in noise signals of semiconductor devices in the time domain
PublicationIn the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first)...
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Semiconductor Devices
e-Learning Courseswesja angielskojęzyczna przedmiotu Przyrządy Półprzewodnikowe dla studentów z programu Erasmus
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Techniques of interference reduction in probe system for wafer level noise measurements of submicron semiconductor devices.
PublicationPrzedstawiono skrótowo system do ostrzowych pomiarów szumów struktur submikronowych. Znaczny wpływ na pomiary ostrzowe mają zakłócenia i szumy własne systemu, zwłaszcza zakłócenia o wysokim poziomie wpraowadzane przez ostrza (fluktuacje rezystancji styków ostrza do struktury powodowane przez wibracje i udary mechaniczne w środowisku pomiarowym)i środowisko elektromagnetyczne. Zakłócenia okresowe powodowane przez wibracje i pola...
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Microfluidic devices for photo-and spectroelectrochemical applications
PublicationThe review presents recent developments in electrochemical devices for photo- and spectroelectrochemical investigations, with the emphasis on miniaturization (i.e., nanointerdigitated complementary metal-oxide-semiconductor devices, micro- and nano-porous silicon membranes or microoptoelectromechanical systems), silica glass/microreactors (i.e., plasmonic, Raman spectroscopy or optical microcavities) or polymer-based devices (i.e.,...
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Edge-Guided Mode Performance and Applications in Nonreciprocal Millimeter-Wave Gyroelectric Components
PublicationThe analogies between the behavior of gyromagnetic and gyroelectric nonreciprocal structures, the use of the simple transfer matrix approach, and the edge-guided (EG) wave property, supported in a parallel plate model for integrated magnetized semiconductor waveguide, are investigated in those frequency regions, where the effective permittivity is negative or positive. As with their ferrite counterparts, the leakage of the EG waves...
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Integrated circuit structure surface images obtained with contact capacitive imaging technique
Open Research DataThe measurements were done using NTEGRA Prima (NT-MDT) device. CSG 10Pt probe.
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Real-time working gas recognition system based on the array of semiconductor gas sensors and portable computer Raspberry PI
PublicationThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and low-cost alternative for other devices, like gas analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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An automatic system for identification of random telegraph signal (RTS) noise in noise signals
PublicationIn the paper the automatic and universal system for identification of Random Telegraph Signal (RTS) noise as a non-Gaussian component of the inherent noise signal of semiconductor devices is presented. The system for data acquisition and processing is described. Histograms of the instantaneous values of the noise signals are calculated as the basis for analysis of the noise signal to determine the number of local maxima of histograms...
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Ryszard Jan Barczyński dr hab. inż.
PeopleRyszard Jan Barczyński (b. 24 June 1957 in Gdańsk), Polish scientist, engineer, a specialist in solid state physics and electronic measurement techniques. In 1976, he obtained a high school diploma in the IV High School Tadeusz Kosciuszko in Torun. Higher education he graduated in 1981 at the Institute of Physics, Technical University of Gdansk in specialty of solid state physics, obtaining master's degree in engineering. Since...
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The Methods for RTS Noise Identification
PublicationIn the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non-Gaussian components in the noise signal in a frequency domain.
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Piotr Płotka dr hab. inż.
PeoplePiotr Płotka received the M.Sc. and D.Eng. degrees in electronic engineering from the Gdansk University of Technology, Poland, in 1976 and 1985. In 2008 he received D.Sc. (Dr.Hab.) degree, also in electronic engineering, from the Institute of Electron Technology at Warsaw, Poland. From 1977 he was with Academy of Technology and Agriculture at Bydgoszcz, Poland and from 1981 with the Gdansk University of Technology. In cooperation...
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Horyzont energoelektroniczny obiektów morskich
PublicationW artykule zaprezentowano współczesne kierunki rozwoju energoelektroniki, w tym w szczególności dotyczące obiektów morskich. Przedstawiono podstawowe parametry aktualnie stosowanych w energoelektronice przyrządów półprzewodnikowych, jak również wykazano interdyscyplinarny charakter rozwoju tej dziedziny. Na przykładzie wybranych urządzeń energoelektronicznych przedstawiono ich komercyjne zastosowania oraz podział i miejsce w łańcuchu...
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Highly linear CMOS triode transconductor for VHF applications
PublicationA high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback...
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Electrical characterization of diamond/boron doped diamond nanostructures for use in harsh environment applications
PublicationThe polycrystalline boron doped diamond (BDD) shows stable electrical properties and high tolerance for harsh environments (e.g. high temperature or aggressive chemical compounds) comparing to other materials used in semiconductor devices. In this study authors have designed electronic devices fabricated from non-intentionally (NiD) films and highly boron doped diamond structures. Presented semiconductor devices consist of highly...
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A calibration model for gas sensor array in varying environmental conditions
PublicationAbstract: Gas-analyzing systems based on gas sensors, commonly referred to as electronic noses, are the systems which enable the recognition of volatile compounds in their working environment and provide the on-line results of analysis. The most commonly used type of sensors in such systems is semiconductor gas sensors. They are considered to be the most reliable in the long-term applications (more than 1 year), however,...
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A calibration model for gas sensor array in varying environmental conditions
PublicationAbstract: Gas-analyzing systems based on gas sensors, commonly referred to as electronic noses, are the systems which enable the recognition of volatile compounds in their working environment and provide the on-line results of analysis. The most commonly used type of sensors in such systems is semiconductor gas sensors. They are considered to be the most reliable in the long-term applications (more than 1 year), however,...
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Pracujący w czasie rzeczywistym system detekcji gazów wykorzystujący przenośny komputer Raspberry PI oraz matrycę półprzewodnikowych czujników gazu
PublicationThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and lowcost alternative for other devices, like gas‑analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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Detection of gaseous compounds with different techniques
PublicationSensing technology has been developed for detection of gases in some environmental, industrial, medical, and scientific applications. The main tasks of these works is to enhance performance of gas sensors taking into account their different applicability and scenarios of operation. This paper presents the descriptions, comparison and recent progress in some existing gas sensing technologies. Detailed introduction to optical sensing...
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Photovoltaic effect in the single-junction DBP/PTCBI organic system under low intensity of monochromatic light
PublicationPhotoelectric properties of the planar ITO/MoO3/DBP/PTCBI/BCP/Ag system were characterized on the basis of short-circuit current, open-circuit voltage and absorption spectra, and current-voltage measurements in the dark and under monochromatic illumination of low intensity. Photovoltaic performance of the system was compared with the performance of ideal semiconductor and excitonic cells of chosen bandgaps. Such analysis shows,...
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Compensation Topologies in IPT Systems: Standards, Requirements, Classification, Analysis, Comparison and Application
PublicationWireless power transfer devices are becoming more relevant and widespread. Therefore, an article is devoted to a review, analysis and comparison of compensation topologies for an inductive power transfer. A new classification of topologies is developed. A lot of attention is paid to the problems of the physical fundamentals of compensation work, standards, safety, and five main topology requirements. It is determined, that topologies...
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FFT analysis of temperature modulated semiconductor gas sensor response for the prediction of ammonia concentration under humidity interference
PublicationThe increasing environmental contamination forces the need to design reliable devices for detecting of the volatile compounds present in the air. For this purpose semiconductor gas sensors, which have been widely used for years, are often utilized. Although they have many advantages such as low price and quite long life time, they still lack of long term stability and selectivity. Namely, environmental conditions have significant...
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Implementation of constant component filter in measurements of random telegraph signal noise
PublicationNoise is generated in all semiconductor devices. The intensity of these fluctuations depends on used elements, manufacturing process, operating conditions and device type. The result noise is a superposition of different kinds of fluctuations like thermal noise, generation-recombination noise, 1/f noise, shot noise and Random Telegraph Signal (RTS) noise. The last one, RTS noise is observed as nonstationary impulse fluctuations....
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Photosensitization of TiO2 and SnO2 by Artificial Self-Assembling Mimics of the Natural Chlorosomal Bacteriochlorophylls
PublicationOf all known photosynthetic organisms, the green sulfur bacteria are able to survive under the lowest illumination conditions due to highly efficient photon management and exciton transport enabled by their special organelles, the chlorosomes, which consist mainly of self-assembled bacteriochlorophyll c, d, or e molecules. A challenging task is to mimic the principle of self-assembling chromophores in artificial light-harvesting...
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Charakterystyka tranzystorów z węglika krzemu w wysokosprawnych przekształtnikach
PublicationPółprzewodnikowe przyrządy mocy z węglika krzemu (SiC) osiągnęły poziom technologiczny umożliwiający powszechne stosowanie w układach przekształtnikowych. W artykule omówiono ostatnie osiągnięcia dotyczące układów przekształtnikowych z przyrządami z węglika krzemu oraz wybrane wyniki badań realizowane na Politechnice Gdańskiej. W artykule opisano właściwości statyczne i dynamiczne tranzystorów MOSFET i JFET z węglika krzemu oraz...
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Impact of dyes isomerization effect on the charge transfer phenomenon occurring on the dye/nanosemiconductor interface
PublicationThe present work aimed to find the answer how does the isomerization of the Ru based dyes affect the overall photon-to-current efficiency of the DSSCs and to explain the charge transfer phenomenon occurring on the dye/ nanosemiconductor interface. Therefore, electronic and optical properties of three bipyridine derivatives anchored on the TiO2 electrode were investigated by computational simulations based on quantum chemistry codes...
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Structural and electronic properties of diamond-composed heterostructures
PublicationDiamond is a promising material for 21st century electronics due to its high thermal and electronic conductivity, biocompatibility, chemical stability, high wear resistance, and possibility of doping. However, the semiconductor properties of diamond, especially free-standing films, have not been fully explored. Nor have their integration with polymers and fragile materials and their applications as electronic components. In this...
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The importance of anchoring ligands of binuclear sensitizers on electron transfer processes and photovoltaic action in dye-sensitized solar cells
PublicationThe relatively low photon-to-current conversion efficiency of dye-sensitized solar cells is their major drawback limiting widespread application. Light harvesting, followed by a series of electron transfer processes, is the critical step in photocurrent generation. An in-depth understanding and fine optimization of those processes are crucial to enhance cell performance. In this work, we synthesize two new bi-ruthenium sensitizers...
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SiC-Based Power Electronic Traction Transformer (PETT) for 3 kV DC Rail Traction
PublicationThe design of rolling stock plays a key role in the attractiveness of the rail transport. Train design must strictly meet the requirements of rail operators to ensure high quality and cost-eective services. Semiconductor power devices made from silicon carbide (SiC) have reached a level of technology enabling their widespread use in traction power converters. SiC transistors oering energy savings, quieter operation, improved reliability...
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Fault detection in electronic circuits using test buses
PublicationA survey of test buses designed for diagnostics of digital and analog electronic circuits is presented: the IEEE 1149.1 bus for digital circuits, the IEEE 1149.4 bus for mixed-signal and the IEEE 1149.6 bus for AC coupled complex digital circuits. Each bus is presented with its structure, solution of key elements, particularly boundary registers and a set of test instructions. Diagnosis with the use of the described buses is...
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The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
PublicationIn this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase....
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Dual Active Bridge (DAB) DC-DC converter for multilevel propulsion converters for electrical multiple units (EMU)
PublicationSemiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling their widespread use in power converters. Two different approaches to implementation of modern traction converters in electric multiple units (EMU) have been presented in recent years: (i) 3.3-kV SiC MOSFET-based three-level PWM inverter with regenerative braking and (ii) 6.5-kV IGBT-based four-quadrant power electronic traction transformer...
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The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials
PublicationSemiconductor-mediated photocatalysis represents an environmentally friendly technology that could be used for the degradation of different pollutants in the gas and aqueous phases, for hydrogen generation, and for CO2-to-valuable product transformation reactions. Therefore, it is extremely important to accurately design a photocatalyst with the relevant features. In recent years, ionic liquids have often been employed as reagents...
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GAS SENSORS WITH TEMPERATURE MODULATION – AN OVERVIEW
PublicationAlthough different methods of improving semiconductor gas sensor properties have been proposed, a technique involving temperature modulation seems to be the most promising. Semiconductor gas sensors working with modulated temperature can be more stable and are more selective comparing with sensor working at one temperature. In this paper, various approaches to temperature modulation are reviewed.
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Medium-Voltage Drives: Challenges and existing technology
PublicationThe article presents an overview of state-of-art solutions, advances, and design and research trends in medium-voltage (MV) drive technologies - and also discusses the challenges and requirements associated with the use of such drives. The choice and deployment of MV drives in industries are associated with numerous requirements related to the front-end converter (grid side) and inverter (machine side). The focus is on solutions...
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Wavelet Transform Analysis of Temperature Modulated Gas Sensor Response
PublicationThe aim of the study was to evaluate whether it is possible to extract the information about the gas concentration despite the influence of humidity. Commercial semiconductor sensor response was examined under the application of a periodic temperature change. The data was collected using measurement protocol for different concentrations of ammonia at specified levels of relative humidity. In this work we focused on the evaluation...
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Al-DIAMOND SCHOTTKY TUNNEL DIODES WITH BARRIER HEIGHT CONTROL
PublicationFew-nanometer-thick very highly boron-doped p-type layers were fabricated at metal-semiconductor interfaces of Schottky barrier diodes formed with aluminum on polycrystalline diamond. Preliminary results show that hermionically-assisted tunneling mechanism results in lower voltage drops at forward biasing of these diodes than expected for the Al-diamond metal-semiconductor potential barrier B. The effective barrier height Bpeff...
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Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model
PublicationThis article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore–Gibson–Thompson (MGT) equation of the fourth-order serves as the theoretical framework...
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Gas sampling system for matrix of semiconductor gas sensors
PublicationSemiconductor gas sensors are popular commercial sensors applied in numerous gas detection systems. They are reliable, small, rugged and inexpensive. However, there are a few problem limiting the wider use of such sensors. Semiconductor gas sensor usually exhibits a low selectivity, low repeatability, drift of response, strong temperature and moisture influence on sensor properties. Sample flow rate is one of the parameters that...
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Deep learning for ultra-fast and high precision screening of energy materials
PublicationSemiconductor materials for energy storage are the core and foundation of modern information society and play important roles in photovoltaic system, integrated circuit, spacecraft technology, lighting applications, and other fields. Unfortunately, due to the long experiment period and high calculation cost, the high-precision band gap (the basic characteristic parameter) of semiconductor is difficult to obtain, which hinders the...
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A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublicationThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
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Various types of semiconductor photocatalysts modified by CdTe QDs and Pt NPs for toluene photooxidation in the gas phase under visible light
PublicationA novel synthesis process was used to prepare TiO2 microspheres, TiO2 P-25, SrTiO3 and KTaO3 decorated by CdTe QDs and/or Pt NPs. The effect of semiconductor matrix, presence of CdTe QDs and/or Pt NPs on the semiconductor surface as well as deposition technique of Pt NPs (photodeposition or radiolysis) on the photocatalytic activity were investigated. The as-prepared samples were characterized by X-ray powder diffractometry (XRD),...
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Materiały dla jednowarstwowych ogniw paliwowych
PublicationA composite material, which may be further applied as a single layer fuel cell, was synthesizes using solid state synthesis method. Composite consisted of two components. The first was a nanoeramic proton conductor - calcium doped lanthanum niobate. The second one was a nanoceramic semiconductor oxide composed of lithium, nickel and zinc oxides respectively.
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Single and Three -Phase PWM AC/AC Converters as Semiconductor Transformers
PublicationAC voltage transformation circuits contain pure or reactance PWM AC/AC converters. These circuits can be treated as AC/AC semiconductor transformers. This paper reviews single-phase and three-phase topologies: both non-isolated and isolated, single as well as two quadrant structure. Additionally, this paper present selected examples of their applications.
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Towards spectroscopic monitoring of photoelectrodes: In-situ Raman photoelectrochemistry of a TiO2/prussian blue photoanode
PublicationHere, novel in-situ Raman photoelectrochemical measurements are performed. The obtained results have proved that it is possible to track the progress of a photoelectrochemical reaction that takes place on a semiconducting electrode using the spectroscopic method. As an exemplary system, the Ti/TiO2/Prussian blue electrode is investigated. Since TiO2 is an n-type semiconductor, it cannot act as an efficient anode in dark conditions....
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Capping ligand initiated CuInS2 quantum dots decoration on, ZnIn2S4 microspheres surface under different alkalinity levels resulting in different hydrogen evolution performance
PublicationSurface distribution of quantum dots (QDs) at the semiconductor matrix caused by synthesis condition (e.g. pH of solution during coupling) could lead to different photocatalytic activity. Thus, achieving an optimal covering of semiconductor matrix by QDs has been challenging. Herein, the influence of the alkalinity level of aqueous decoration medium for the coupling of mercaptoundecanoic acid (MUA) capped CuInS2 quantum dots (CIS)...