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Search results for: GAN-TRANSISTORS
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublicationExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
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Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
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The behavioural model of graphene field-effect transistor
PublicationThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
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Organic filed effect transistor with zinc phthalocyanine.
PublicationW pracy przedstawiono wyniki badań doświadczalnych organicznego tranzystora polowego z warstwą ftalocyjaniny cynku. Jako podłoże zastosowano wysoko domieszkowane wafle krzemu pokryte warstwą tlenku krzemu (IV) o grubości 100 nm, na którą techniką fotolitograficzną była naniesiona struktura elektrod (tzw. geometria dolnych kontaktów). Złote elektrody źródła i drenu tworzyły kanał o długości 5 m (jest to odległość między elektrodą...
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Meta : Translators' Journal
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Graphene field-effect transistor application for flow sensing
PublicationMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
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The PWM current source inverter with IGBT transistors and multiscalar model control system
PublicationW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
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Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublicationA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
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Method of sacrificial anode transistor-driving in cathodic protection system
PublicationA magnesium anode driving system has been proposed. A PNP driving transistor has been used. Electrochemical testing in 3%NaCl, results and comparison of the driving system and classic direct anode to cathode connection are presented. The driving system reduced the protection current and stabilized the working conditions of the anode. Higher anode efficiency was achieved. Overprotection and hydrogen embrittlement threats were prevented...
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Gaz, Woda i Technika Sanitarna
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Nafta-Gaz
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Evolutionary design and optimization of combinational digital circuits with respect to transistor count.
PublicationW artykule przedstawiono możliwość wykorzystania algorytmu ewolucyjnego do projektowania i optymalizacji cyfrowych układów kombinacyjnych w odniesieniu do liczby tranzystorów. Zastosowano chromosomy o budowie wielowarstwowej zwiększające wydajność algorytmu. Zaprojektowano, wykorzystując zaproponowaną metodę, cztery układy kombinacyjne o tabelach logicznych wybranych z literatury. Uzyskane wyniki są w wielu przypadkach lepsze...
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Method of sacrificial anode dual transistor-driving in stray current field
PublicationIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
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Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
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Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
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Open-transistor fault diagnostics in voltage-source inverters by analyzing the load current
PublicationA novel method is presented for the detection andisolation of open-transistor faults in voltage-source invertersfeeding low-power AC motors. The method is based onmonitoring two diagnostic signals, one indicating sustained nearzerovalues of output current and thus permitting fault detection,the other permitting the isolation of the particular transistorwhich went faulty. The latter signal is the ratio of the averagephase current...
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Open-transistor fault diagnostics in voltage-source inverters by analyzing the load current
PublicationPrzedstawiono nową metodę detekcji i lokalizacji uszkodzeń polegających na braku przewodzenia tranzystorów w falownikach napięcia zasilających silniki indukcyjne. Metoda jest rozszerzeniem, opracowanej wcześniej, metody wykorzystującej znormalizowane składowe stałe prądów obciążenia. Znormalizowane wartości średnie prądów powiązano z dodatkowymi wskaźnikami diagnostycznymi, które zawierają informacje o czasie trwania nieprzewodzenia...
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
Open Research DataThis data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced...
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Studia Komitetu Przestrzennego Zagospodarowania Kraju PAN
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Evolutionary optimization of combinational digital circuits with current-mode gates with respect to transistor count
PublicationW artykule przedstawiono metodę ewolucyjnej minimalizacji liczby tranzystorów w cyfrowym układzie kombinacyjnym, zrealizownaym z wykorzystaniem bramek pracujących w trybie prądowym. W zastosowanym algorytmie ewolucyjnym zastosowano chromosomy o budowie wielowarstwowej, przez co zwiększono wydajność optymalizacji. Wyniki otrzymane z wykorzystaniem proponowanej metody zostały porównane z rezultatami osiągniętymi za pomocą map Karnough...
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Ocena możliwości wykorzystania sieci pętlowych RPR I 10 Gigabit Ethernet do budowy sieci LAN/MAN/WAN
PublicationPrzedstawiono rozwiązania sieciowe: 10GE i RPR. W szczególności omówiono możliwość wykorzystania tych rozwiązań w sieciach LAN, MAN, WAN i ich współpracy z infrastrukturą SONET/SDH. Na tle zalet sieci zbudowanych całkowicie w technologii 10GE i ograniczeń jakim podlegają sieci Ethernet ukazano proponowane w RPR możliwości zarządzania pasmem i skuteczność mechanizmów reakcji na uszkodzenia. Przedstawiono koszty realizacji wybranych...
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response
PublicationIn this paper, a low-voltage low-dropout analog regulator (ALDO) based on a native n-channel MOS transistor is proposed. Application of the native transistor with the threshold voltage close to zero allows elimination of the charge pump in low-voltage regulators using the pass element in a common drain configuration. Such a native pass transistor configuration allows simplification of regulator design and improved performance,...
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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BIULETYN KOMITETU PRZESTRZENNEGO ZAGOSPODAROWANIA KRAJU PAN
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Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublicationW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
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IEEE LAN/MAN Workshop
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Metody udostępniania materiałów multimedialnych w sieciach LAN i WAN.
PublicationW referacie przedstawiono możliwości wzbogacania treści edukacyjnych dzięki wykorzystaniu technik multimedialnych. Uzupełnienie materiału edukacyjnego w postaci plików audio oraz wideo daje zupełnie nową jakość . Opisano jak stworzyć taki materiał, jaki jest potrzebny do realizacji oraz jak bardzo czasochłonny jest ten proces. Wnioski i spostrzeżenia zostały przedstawione na podstawie praktycznej realizacji wykładu dot. Systemu...
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Metody udostępniania materiałów multimedialnych w sieciach LAN I WAN.
PublicationWraz z rozpowszechnianiem usług szerokopasmowych zmniejsza się ograniczenie co do objętości oferowanych materiałów edukacyjnych udostępnianych w sieciach LAN i WAN. W referacie przedstawiono możliwości wzbogacenia treści edukacyjnych dzięki wykorzystaniu technik multimedialnych. Uzupełnienie materiału edukacyjnego w postaci plików audio i wideo daje zupełnie nową jakość. Opisano jak stworzyć taki materiał, jaki sprzęt jest potrzebny...
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Józef Woźniak prof. dr hab. inż.
PeopleProfessor Józef Woźniak received his M.Sc., Ph.D. and D.Sc. degrees in electronics and telecommunications from the Faculty of Electronics, Gdańsk University of Technology (GUT), Poland, in 1971, 1976 and 1991, respectively. In January 2002 he became a full professor. In 1993 he was elected Associate Dean of the Faculty of Electronics and in 1994 he was he was appointed a Professor at GUT. Simultaneously, from October 1994 till...
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublicationAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
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Can a man also be afraid? Partner communication, anxiety and hope in parents of premature infants
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The Peculiarity of Man
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Man and Environment
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Gran Tour
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MAN IN INDIA
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A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublicationThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
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A 0.5 V Nanowatt Biquadratic Low-Pass Filter with Tunable Quality Factor for Electronic Cochlea Applications
PublicationA novel implementation of an analogue low-power, second-order, low-pass filter with tunable quality factor (Q) is presented and discussed. The filter feature is a relatively simple, buffer-based, circuit network consisting of eleven transistors operating in a subthreshold region. Q tuning is accomplished by injecting direct current into a network node, which changes the output resistance of the transistors and, as a result, modifies...
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Effects of Heat and Momentum Gain Differentiation during Gas Detonation Spraying of FeAl Powder Particles into the Water
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Kierunek Wod-Kan
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Performance of FAN conception of traffic control in IP QoS networks
PublicationIn this paper we present the architectural implementation of Flow Aware Networking (FAN), a new approach for realizing QoS guarantees in the Internet. We also propose FAN traffic control algorithm which performs traffic control on flow level. Using the proposed FAN node model, we conduct simulation research to prove if FAN can be a new approach for realizing QoS guarantees. The basis of this research is finding a way to guarantee...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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Magnetism from fundamentals to spintronics 22/23
e-Learning Courses1. Basic magnetic quantities2. Magnetism of atoms and molecules, atoms in external magnetic fields3. Solid state magnetism, types of magnetic materials (dia-, para-, and ferromagnetism)4. Ferromagnetism and domain structures5. Magnetism of small particles, single domain particles (StonerWohlfarth model), thin films6. Experimental techniques of magnetic properties and magnetisation state determination. Domain structurevisualisation...
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Piętnaście lat istnienia Studenckiego Koła Naukowego Rusycystów Translatoryków i Leksykografów „Translationis” [Fifteen years of 'Translationis', the Society of Russian Student Translators and Lexicographers]
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Wojciech Sadowski prof. dr hab. inż.
PeopleWojciech Sadowski (born 2 February 1954 in Ostaszewo, Poland), scientist, engineer, professor at Gdansk University of Technology, specialist in solid state body physics, nanotechnology, optoelectronics. In 1973 he completed his high school education at High School Nicolaus Copernicus in Chelmno. In 1979 he graduate from Leningrad Electrotechnical Institute in Russia (former Soviet Union) with specialism in dielectrics and semiconductors....