Search
Filters
total: 12488
filtered: 10409
-
Catalog
- Publications 10409 available results
- Journals 158 available results
- Conferences 4 available results
- Publishing Houses 3 available results
- People 339 available results
- Inventions 35 available results
- Projects 67 available results
- Laboratories 3 available results
- Research Teams 21 available results
- Research Equipment 2 available results
- e-Learning Courses 404 available results
- Events 47 available results
- Open Research Data 996 available results
Chosen catalog filters
displaying 1000 best results Help
Search results for: GAN-TRANSISTORS
-
Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
-
Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
-
Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
Publication -
Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
-
Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublicationExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
-
Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
-
Organic filed effect transistor with zinc phthalocyanine.
PublicationW pracy przedstawiono wyniki badań doświadczalnych organicznego tranzystora polowego z warstwą ftalocyjaniny cynku. Jako podłoże zastosowano wysoko domieszkowane wafle krzemu pokryte warstwą tlenku krzemu (IV) o grubości 100 nm, na którą techniką fotolitograficzną była naniesiona struktura elektrod (tzw. geometria dolnych kontaktów). Złote elektrody źródła i drenu tworzyły kanał o długości 5 m (jest to odległość między elektrodą...
-
The behavioural model of graphene field-effect transistor
PublicationThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
-
Graphene field-effect transistor application for flow sensing
PublicationMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
-
The PWM current source inverter with IGBT transistors and multiscalar model control system
PublicationW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
-
Method of sacrificial anode transistor-driving in cathodic protection system
PublicationA magnesium anode driving system has been proposed. A PNP driving transistor has been used. Electrochemical testing in 3%NaCl, results and comparison of the driving system and classic direct anode to cathode connection are presented. The driving system reduced the protection current and stabilized the working conditions of the anode. Higher anode efficiency was achieved. Overprotection and hydrogen embrittlement threats were prevented...
-
Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublicationA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
-
Evolutionary design and optimization of combinational digital circuits with respect to transistor count.
PublicationW artykule przedstawiono możliwość wykorzystania algorytmu ewolucyjnego do projektowania i optymalizacji cyfrowych układów kombinacyjnych w odniesieniu do liczby tranzystorów. Zastosowano chromosomy o budowie wielowarstwowej zwiększające wydajność algorytmu. Zaprojektowano, wykorzystując zaproponowaną metodę, cztery układy kombinacyjne o tabelach logicznych wybranych z literatury. Uzyskane wyniki są w wielu przypadkach lepsze...
-
Method of sacrificial anode dual transistor-driving in stray current field
PublicationIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
-
Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
Publication -
Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
-
Open-transistor fault diagnostics in voltage-source inverters by analyzing the load current
PublicationPrzedstawiono nową metodę detekcji i lokalizacji uszkodzeń polegających na braku przewodzenia tranzystorów w falownikach napięcia zasilających silniki indukcyjne. Metoda jest rozszerzeniem, opracowanej wcześniej, metody wykorzystującej znormalizowane składowe stałe prądów obciążenia. Znormalizowane wartości średnie prądów powiązano z dodatkowymi wskaźnikami diagnostycznymi, które zawierają informacje o czasie trwania nieprzewodzenia...
-
Open-transistor fault diagnostics in voltage-source inverters by analyzing the load current
PublicationA novel method is presented for the detection andisolation of open-transistor faults in voltage-source invertersfeeding low-power AC motors. The method is based onmonitoring two diagnostic signals, one indicating sustained nearzerovalues of output current and thus permitting fault detection,the other permitting the isolation of the particular transistorwhich went faulty. The latter signal is the ratio of the averagephase current...
-
The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
-
Evolutionary optimization of combinational digital circuits with current-mode gates with respect to transistor count
PublicationW artykule przedstawiono metodę ewolucyjnej minimalizacji liczby tranzystorów w cyfrowym układzie kombinacyjnym, zrealizownaym z wykorzystaniem bramek pracujących w trybie prądowym. W zastosowanym algorytmie ewolucyjnym zastosowano chromosomy o budowie wielowarstwowej, przez co zwiększono wydajność optymalizacji. Wyniki otrzymane z wykorzystaniem proponowanej metody zostały porównane z rezultatami osiągniętymi za pomocą map Karnough...
-
Ocena możliwości wykorzystania sieci pętlowych RPR I 10 Gigabit Ethernet do budowy sieci LAN/MAN/WAN
PublicationPrzedstawiono rozwiązania sieciowe: 10GE i RPR. W szczególności omówiono możliwość wykorzystania tych rozwiązań w sieciach LAN, MAN, WAN i ich współpracy z infrastrukturą SONET/SDH. Na tle zalet sieci zbudowanych całkowicie w technologii 10GE i ograniczeń jakim podlegają sieci Ethernet ukazano proponowane w RPR możliwości zarządzania pasmem i skuteczność mechanizmów reakcji na uszkodzenia. Przedstawiono koszty realizacji wybranych...
-
Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
-
Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response
PublicationIn this paper, a low-voltage low-dropout analog regulator (ALDO) based on a native n-channel MOS transistor is proposed. Application of the native transistor with the threshold voltage close to zero allows elimination of the charge pump in low-voltage regulators using the pass element in a common drain configuration. Such a native pass transistor configuration allows simplification of regulator design and improved performance,...
-
Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
-
Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublicationW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
-
Metody udostępniania materiałów multimedialnych w sieciach LAN i WAN.
PublicationW referacie przedstawiono możliwości wzbogacania treści edukacyjnych dzięki wykorzystaniu technik multimedialnych. Uzupełnienie materiału edukacyjnego w postaci plików audio oraz wideo daje zupełnie nową jakość . Opisano jak stworzyć taki materiał, jaki jest potrzebny do realizacji oraz jak bardzo czasochłonny jest ten proces. Wnioski i spostrzeżenia zostały przedstawione na podstawie praktycznej realizacji wykładu dot. Systemu...
-
Metody udostępniania materiałów multimedialnych w sieciach LAN I WAN.
PublicationWraz z rozpowszechnianiem usług szerokopasmowych zmniejsza się ograniczenie co do objętości oferowanych materiałów edukacyjnych udostępnianych w sieciach LAN i WAN. W referacie przedstawiono możliwości wzbogacenia treści edukacyjnych dzięki wykorzystaniu technik multimedialnych. Uzupełnienie materiału edukacyjnego w postaci plików audio i wideo daje zupełnie nową jakość. Opisano jak stworzyć taki materiał, jaki sprzęt jest potrzebny...
-
GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublicationAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
-
Can a man also be afraid? Partner communication, anxiety and hope in parents of premature infants
Publication -
A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublicationThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
-
A 0.5 V Nanowatt Biquadratic Low-Pass Filter with Tunable Quality Factor for Electronic Cochlea Applications
PublicationA novel implementation of an analogue low-power, second-order, low-pass filter with tunable quality factor (Q) is presented and discussed. The filter feature is a relatively simple, buffer-based, circuit network consisting of eleven transistors operating in a subthreshold region. Q tuning is accomplished by injecting direct current into a network node, which changes the output resistance of the transistors and, as a result, modifies...
-
Effects of Heat and Momentum Gain Differentiation during Gas Detonation Spraying of FeAl Powder Particles into the Water
Publication -
Performance of FAN conception of traffic control in IP QoS networks
PublicationIn this paper we present the architectural implementation of Flow Aware Networking (FAN), a new approach for realizing QoS guarantees in the Internet. We also propose FAN traffic control algorithm which performs traffic control on flow level. Using the proposed FAN node model, we conduct simulation research to prove if FAN can be a new approach for realizing QoS guarantees. The basis of this research is finding a way to guarantee...
-
Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
-
Piętnaście lat istnienia Studenckiego Koła Naukowego Rusycystów Translatoryków i Leksykografów „Translationis” [Fifteen years of 'Translationis', the Society of Russian Student Translators and Lexicographers]
Publication -
Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
-
Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublicationW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
-
Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors
PublicationThis paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscilla-tors as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip imple-mentation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability...
-
Burn depths evaluation based on active dynamic IR thermal imaging - A preliminary study
Publication.
-
EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
-
3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
-
Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublicationWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
-
EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
-
Problems of gas detection by resistance fluctuations in gas sensors
PublicationPrzedstawiono problemy budowy dystrybutora gazów oraz próbek zapachowych do badań sensorów gazu. Podano układ elektroniczny wykorzystywany do rejestracji fluktuacji rezystancji obserwowany w czujnikach gazu. Załączono przykładowe wyniki obserwacji sygnałów losowych.
-
EFFICIENCY OF GAS MIXTURES DETECTION BY RESISTIVE GAS SENSORS
PublicationResistive gas sensors are very popular and are commonly used to detect various gases and their mixtures. Their main disadvantage is very limited selectivity. Practical use of gas sensors in environmental applications (e.g., in sewage systems to protect workers, in air conditioning systems to monitor atmosphere quality) requires determination of concentration of a few mixed gases at the same time. We would like to present recent...
-
Efficiency of gas mixtures detection by resistive gas sensors
PublicationResistive gas sensors are very popular and are commonly used to detect various gases and their mixtures. Theeir main disadvantage is very limited selectivity. Practical use of gas sensors in environenmental applications requires determination of concentration of a few mixed gases at the same time. We would like to present recent results of gas detection improvement by utilizing a single gas sensor and additional measurements to...
-
Gas sampling system for matrix of semiconductor gas sensors
PublicationSemiconductor gas sensors are popular commercial sensors applied in numerous gas detection systems. They are reliable, small, rugged and inexpensive. However, there are a few problem limiting the wider use of such sensors. Semiconductor gas sensor usually exhibits a low selectivity, low repeatability, drift of response, strong temperature and moisture influence on sensor properties. Sample flow rate is one of the parameters that...
-
Selectivity of amperometric gas sensors in multicomponent gas mixtures
PublicationIn recent years smog and poor air quality became a growing environmental problem. There is a need to continuously monitor the quality of air. The lack of selectivity is one of the most important problems limiting the use of gas sensors for this purpose. In this study, a selectivity of the six amperometric gas sensors is being investigated. Calibration of sensors has been performed in order to find a correlation between concentration...
-
The (de)biasing Effect of GAN-Based Augmentation Methods on Skin Lesion Images
Publication -
Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies
Publication