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Wyniki wyszukiwania dla: silicon oxycarbide (sioc)
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The AFM micrographs of isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the atomic force microscope images of isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 20 to 90 seconds
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Interface diffusion between metallic nanoparticles and silicon substrate
Dane BadawczeInterface diffusion between metallic nanoparticles and silicon substrate was detected by EDX method. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
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The AFM micrographs of gold nanoparticles on silicon substrate
Dane BadawczeThe dataset contains the first approach towards AFM topographic imaging of gold nanoparticles synthesized and immobilized on the silicon surface. Measurements were made in the semi-contact mode on the NTEGRA Prima device, manufactured by NT-MDT. Scans were performed with amplitude detection at an operating value of 60% of the free oscillation amplitude....
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XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
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SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
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XRD patterns of V2O5 thin films deposited on silicon substrate
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
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SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
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Physical vapor deposition of thin gold film on crystalline silicon
Dane BadawczeThis dataset contains supporting materials for the article entitled as "A novel method for realistically simulating the deposition of thin films from the gas phase and its application to study the growth of thin gold film on crystalline silicon" authored by S. Winczewski et al.
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XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM-EDS images of expanded polystyrene spheres coated with silicon dioxide (SiO2) and/or titanium dioxide (TiO2)
Dane BadawczeData contain SEM and SEM-EDS images of expanded polystyrene spheres coated with silicon dioxide (SiO2) and/or titanium dioxide (TiO2). The detailed equipment and measurement data was described in measurement info.txt file.
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Morphology and structure of V2O5 nanorods deposited on the silicon substrate after reduction
Dane BadawczeThe DataSet contains the XRD patterns and SEM micrographs of V2O5 nanorods on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C for 40 under a reducing atmosphere (94% Ar, 6% H2).
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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Electrical responses of Graphene-Silicon Schottky diodes toward nitrogen dioxide and tetrahydrofuran under irradiation
Dane BadawczeGraphene-Silicon Schottky junctions were utilized as gas sensors toward inorganic (nitrogen dioxide) and organic (tetrahydrofuran) gas qualitative and quantitative detection. The electrical responses of the sensors were collected in the form of current-voltage characteristics and measurements of current in time domain for a selected voltage bias. The...
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Silicon microcantilever with impedance sensor
Dane BadawczeThe issue of microelectromechanical systems (MEMS) [1] has been enjoying popularity and interest since the 90s of the 20th century. Microcells are one of the simplest devices of this type, but they can be widely used in sensors. There are reports on the possibility of using this type of sensors in the context of such important issues as diagnostics...
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Electrical and noise responses of Graphene-Silicon Schottky diodes decorated with Au nanoparticles for light-enhanced sensing of organic gases
Dane BadawczeGraphene-Silicon Schottky junctions decorated with Au nanoparticles were used for light-enhanced detection of organic tetrahydrofuran and chloroform. Au nanoparticles exhibited localized surface plasmon resonance (LSPR) in the range of yellow light; thus yellow LED (wavelength of 592 nm) was utilized to induce the plasmonic effect, that increased the...
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SEM images of tge gold nanostructures on silicon
Dane BadawczeAu nanostructures were prepared on Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air Products 99.999%)....
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Brunauer-Emmett-Teller (BET) surface analysis of titanium dioxide (TiO2) and silicon dioxide (SiO2) used for coating of expanded polystyrene spheres (EPS)
Dane BadawczeData refer to the results of BET surface area of TiO2 and SiO2 powders used for coating of expanded polystyrene spheres. The detailed measurement and equipment data was described in readme BET.txt file.TiO2 was treated firstly in autoclave at 150 C degrees for 1h, then was further heat treated in Ar at 400 C degrees. As a raw material TiO2 was used,...
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SEM inwestigation of the silver nanostructures
Dane BadawczeSilver thin films with a thickness of 1nm, 3nm, 5nm, 7nm and 9nm were deposited by a table-top magnetron sputtering unit in a pure argon plasma from a high-purity silver target. Silicon wafers was used as a substrates. As-deposired films were annealed in Ar atmosphere at 550 Celsius degree for 15 minutes.As a result of annealing, Ag nanostructures formed...
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TEM and EDX study of the Al2O3 ultra thin films
Dane BadawczeThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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X-Ray diffraction of the metallic nanostructures
Dane BadawczeMetallic nanostructures (gold and silver) were manufactured as a thermal annealing of gold or silver thin film. Gold films with thickness of 2.8 nm were deposited on a silicon substrates using a table-top dc magnetron sputtering coater (EM SCD 500, Leica), equipped with quartz microbalance for in-situ thickness measurements. Films were deposited from...
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Scanning electron microscopy (SEM) images of the boron-dopied diamond surfaces
Dane BadawczeThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of diamond electrodes on silicon substrates. The diamond surface is characterized by ultra-crystalline diamonds obtained by CVD synthesis.
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SEM image of a porous wick material made from SIC
Dane BadawczeThe file contains scanning electron microscope (SEM) images of a porous sample made from Silicon Carbide. The SEM technique enables the measurement of pore sizes exclusively at the external cut surface of the wick, primarily capturing the largest pores. Additionally, the pore channels within the material exhibit dimensional variations due to an irregular...
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Scanning electron microscopy (SEM) images of the boron-doped carbon nanowalls surfaces
Dane BadawczeThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of boron-doped carbon nanowalls electrodes on silicon substrates. The surface is characterized by nano-walled structures. The obtained electrodes were doped with boron at the level of [B]/[C] = 5000ppm in the gas atmosphere during the synthesis.
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Scanning electron microscopy (SEM) images of the boron-dopied carbon nanowalls surfaces
Dane BadawczeThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of boron-doped carbon nanowalls electrodes on silicon substrates. The surface is characterized by nano-walled structures. The obtained electrodes were doped with boron at the level of [B]/[C] = 1200ppm in the gas atmosphere during the synthesis.
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Scanning electron microscopy (SEM) images of the boron-doped carbon nanowalls surfaces
Dane BadawczeThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of boron-doped carbon nanowalls electrodes on silicon substrates. The surface is characterized by nano-walled structures. The obtained electrodes were doped with boron at the level of [B]/[C] = 2000ppm in the gas atmosphere during the synthesis.
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The AFM micrographs of vanadium oxides thin films obtained at 800°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on a silicon substrate and vanadium thin films were obtained by annealing as-prepared films at...
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XRD patterns of VO2 and V6O13 nanostructures
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V6O13 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under a reducing atmosphere (94% Ar, 6% H2) at 500, 600 and 700C for 10h.
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The AFM micrographs of vanadium oxides thin films obtained at 1200°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 400°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 600°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
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The AFM micrographs of of vanadium oxides thin films obtained at 300°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxide thin films obtained at 100°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 150°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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Chemical composition of V2O5 nanorods
Dane BadawczeThe DataSet contains the chemical compositions of the V2O5 nanorods on a silicon substrate. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared thin films were annealed at 600C under a synthetic air atmosphere.
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The AFM micrographs of vanadium oxides thin films obtained at 200°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
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The AFM micrographs of vanadium oxides thin films obtained at 450°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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SEM micrographs of VO2 and V6O13 nanostructures
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V6O13 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under a reducing atmosphere (94% Ar, 6% H2) at 600 and 700C for 10h.
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films were deposited on a silicon and quartz glass substrate and were annealing at 1000°C under an argon atmosphere.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1000°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1000°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 800°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 800°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1200°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Temperature of formation of Au nanostructures
Dane BadawczeNanostructures were obtained via annealing of thin Au films. In order to determine possible nanoislands formation mechanisms, dependence on initial film thickness was examined. For the surface morphology studies, nanograin structure and chemical composition analysis, SEM, HR TEM and EDS measurements were performed, respectively. Morphology studies shown...
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Depth profile of the gold-silver bimetallic structures
Dane BadawczeSilver and gold bimetallic layers were deposited on a silicon substrate by magnetron sputtering method. Both, Au and Ag layers had 3 nm of thickness. That prepared nanostructures were measured by XPS method. To obtain a depth profile of chemical composition, an Argon ion (Ar+) gun was used for etching surface of sample. Each cycle of etching takes 30...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C dependent on film thickness
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (2-3 AsP layers) were deposited on a silicon substrate and were annealing at 1000°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
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XRD patterns of the V2O5 coatings after thermal treatment under reducing atmosphere
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 coatings on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C, 600C, and 700C for 10 under a reducing atmosphere (94% Ar, 6% H2).