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Wyniki wyszukiwania dla: POWER SEMICONDUCTOR DEVICES
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Noise in semiconductor devices
PublikacjaOmówiono typowe źródła szumów występujące w przyrządach pólprzewodnikowych, a mianowicie: cieplne, śrutowe, generacyjno-rekombinacyjne, 1/f, 1/f2, wybuchowe (RTS), lawinowe. Przedstawiono szumowe schematy zastępcze tranzystora bipolarnego, JFET i MOSFET oraz opisano wydajności poszczególnych źródeł szumów. Zasugerowano jak dobierać przyrządy półprzewodnikowe do małoszumowych układów w zakresie małych częstotliwości.
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A new nethod for RTS noise of semiconductor devices identification
PublikacjaIn the paper, a new method, called the noise scatterin pattern method (NSP method), for random telegraph signal noise identyfication in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are presented.
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Methodology of semiconductor devices classification into groups of differentiated quality
PublikacjaZaproponowano klasyfikację przyrządów półprzewodnikowych do grup o zróżnicowanej jakości na podstawie ich szumów własnych z zakresu małych częstotliwości. Przedstawiono metodologię umożliwiającą stwierdzenie, czy zaproponowany parametr szumowy X dla danego typu przyrządu półprzewodnikowego może być stosowany do określenia jakości. Sprecyzowano przebieg badań wstępnych bazujących na ocenie wyników pomiarów szumów własnych z zakresu...
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Identification of inherent noise components of semiconductor devices on an example of optocouplers
PublikacjaIn the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise...
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A method of RTS noise identification in noise signals of semiconductor devices in the time domain
PublikacjaIn the paper a new method of Random Telegraph Signal (RTS) noise identification is presented. The method is based on a standardized histogram of instantaneous noise values and processing by Gram-Charlier series. To find a device generating RTS noise by the presented method one should count the number of significant coefficients of the Gram-Charlier series. This would allow to recognize the type of noise. There is always one (first)...
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Techniques of interference reduction in probe system for wafer level noise measurements of submicron semiconductor devices.
PublikacjaPrzedstawiono skrótowo system do ostrzowych pomiarów szumów struktur submikronowych. Znaczny wpływ na pomiary ostrzowe mają zakłócenia i szumy własne systemu, zwłaszcza zakłócenia o wysokim poziomie wpraowadzane przez ostrza (fluktuacje rezystancji styków ostrza do struktury powodowane przez wibracje i udary mechaniczne w środowisku pomiarowym)i środowisko elektromagnetyczne. Zakłócenia okresowe powodowane przez wibracje i pola...
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Power devices in Polish National Silicon Carbide Program
PublikacjaArtykuł zawiera informacje o polskim rządowym programie ''Nowe technologie na bazie węglika krzemu i ich zastosowania w elektronice wielkich częstotliwości, dużych mocy i wysokich temperatur''. Program zawiera trzy główne zadania zawierające następujące cele: wytworzenie podłoży z SiC, wytworzenie przyrządów z SiC oraz ocenę działania wybranych przyrządów w układach aplikacyjnych. Omówiono zastosowane metody wytwarzania podłoży,...
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Energy consumption estimation of low-power devices using an integrating coulombmeter
PublikacjaThe main problem in designing devices powered with Energy Harvesting is an estimation of energy demand of low-power devices as well as quantity of energy provided by the selected energy transducer in the assumed work conditions. Due to the work characteristic of each block of the device and properties of the measured signal, measurement is not trivial. The paper presents the proposal of the micro-charge measurement device based...
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Comparative Analysis of Reactive Power Compensation Devices in a Real Electric Substation
PublikacjaA constant worldwide growing load stress over a power system compelled the practice of a reactive power injection to ensure an efficient power network. For this purpose, multiple technologies exist in the knowledge market out of which this paper emphasizes the usage of the flexible alternating current transmission system (FACTS) and presents a comparative study of the static var compensator (SVC) with the static synchronous compensator...
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Silicon Oxycarbide-Graphite Electrodes for High-Power Energy Storage Devices
PublikacjaHerein we present a study on polymer-derived silicon oxycarbide (SiOC)/graphite composites for a potential application as an electrode in high power energy storage devices, such as Lithium-Ion Capacitor (LIC). The composites were processed using high power ultrasound-assisted sol-gel synthesis followed by pyrolysis. The intensive sonication enhances gelation and drying process, improving the homogenous distribution of the graphitic...
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Influence of Shunt Compensation with SVC Devices on Resonance Risk in Power Systems
PublikacjaMany analyses are required to locate a new reactive power source in a power system. The choice of a location is a very complex matter which requires various aspects to be considered. Selecting a location also entails the necessity to assess it from the point of view of the selected compensator’s structure as well as the system’s performance in various states with the new device on. The paper presents the issues of assessing compensator...
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Neural Networks in the Diagnostics Process of Low-Power Solar Plant Devices
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Reliability Testing of Wind Power Plant Devices with the Use of an Intelligent Diagnostic System
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Method of Estimating Uncertainty as a Way to Evaluate Continuity Quality of Power Supply in Hospital Devices
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Verification of safety in low-voltage power systems without nuisance tripping of residual current devices
PublikacjaLow-voltage power systems require initial and periodical verification to check the effectiveness of protection against electric shock. As a protection in case of fault, automatic disconnection of supply is most often used. To verify such a protection measure, the earth fault loop impedance or resistance is measured. This measurement is easy to perform in circuits without residual current devices. When residual current devices are...
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Effect of band gap on power conversion efficiency of single-junction semiconductor photovoltaic cells under white light phosphor-based LED illumination
PublikacjaOn the basis of the detailed balance principle, curves of efficiency limit of single-junction photovoltaic cells at warm and cool white light phosphor-based LED bulbs with luminous efficacy exceeding 100 lm/W have been simulated. The effect of energy band gap and illuminance on the efficiencies at warm and cool light is discussed. The simulations carried out show that maximum power conversion efficiency at 1000 lx reaches 52.0%...
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Semiconductor Devices
Kursy Onlinewesja angielskojęzyczna przedmiotu Przyrządy Półprzewodnikowe dla studentów z programu Erasmus
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Low-power microwave-induced fabrication of functionalised few-layer black phosphorus electrodes: A novel route towards Haemophilus Influenzae pathogen biosensing devices
PublikacjaIn this paper, various passivation schemes were applied at few-layer black phosphorus (FLBP) to achieve covalent functionalisation with 4-azidobenzoic acid, improving its electrochemical response intended for analytical and biosensing applications. The thermal and microwave assisted modification procedures in toluene and dime-thylformamide resulted in high reversibility of reactions on functionalised FLBP using a ferricyanide/ferrocya-nide...
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Fundamentals of Machinery Operation and Power Engineering Devices, PG_00042101
Kursy OnlineSpecjalność: Energy Technologies (WOiO), I stopnia - inżynierskie, stacjonarne, 2018/2019 - zimowy (obecnie sem. 4) Specjalność: Energy Technologies (WM), I stopnia - inżynierskie, stacjonarne, 2018/2019 - zimowy (obecnie sem. 4) Specjalność: Energy Technologies (WEiA), I stopnia - inżynierskie, stacjonarne, 2018/2019 - zimowy (obecnie sem. 4)
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Fundamentals of Machinery Operation and Power Engineering Devices, L, ENE, sem. 5, zima 2022/23 (PG_00042101)
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Fundamentals of Machinery Operation and Power Engineering Devices, W, PE, sem 05, zimowy 23/24 (PG_00042101)
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Fundamentals of Machinery Operation and Power Engineering Devices, L, ET, sem.5, zima 23/24 (PG_00042101)
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Highly linear CMOS triode transconductor for VHF applications
PublikacjaA high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback...
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SiC-Based Power Electronic Traction Transformer (PETT) for 3 kV DC Rail Traction
PublikacjaThe design of rolling stock plays a key role in the attractiveness of the rail transport. Train design must strictly meet the requirements of rail operators to ensure high quality and cost-eective services. Semiconductor power devices made from silicon carbide (SiC) have reached a level of technology enabling their widespread use in traction power converters. SiC transistors oering energy savings, quieter operation, improved reliability...
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Horyzont energoelektroniczny obiektów morskich
PublikacjaW artykule zaprezentowano współczesne kierunki rozwoju energoelektroniki, w tym w szczególności dotyczące obiektów morskich. Przedstawiono podstawowe parametry aktualnie stosowanych w energoelektronice przyrządów półprzewodnikowych, jak również wykazano interdyscyplinarny charakter rozwoju tej dziedziny. Na przykładzie wybranych urządzeń energoelektronicznych przedstawiono ich komercyjne zastosowania oraz podział i miejsce w łańcuchu...
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Compensation Topologies in IPT Systems: Standards, Requirements, Classification, Analysis, Comparison and Application
PublikacjaWireless power transfer devices are becoming more relevant and widespread. Therefore, an article is devoted to a review, analysis and comparison of compensation topologies for an inductive power transfer. A new classification of topologies is developed. A lot of attention is paid to the problems of the physical fundamentals of compensation work, standards, safety, and five main topology requirements. It is determined, that topologies...
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Piotr Płotka dr hab. inż.
OsobyPiotr Płotka otrzymał tytuł zawodowy magistra inżyniera w 1976 r., a stopień doktora w dyscyplinie elektronika w 1985 r. – nadane przez Wydział Elektroniki Telekomunikacji i Informatyki Politechniki Gdańskiej. W 2008 r. otrzymał stopień doktora habilitowanego, także w dyscyplinie elektronika, nadany przez Instytut Technologii Elektronowej w Warszawie. Od 1977 r. pracował w Akademii Techniczno-Rolniczej w Bydgoszczy, a od 1981...
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Charakterystyka tranzystorów z węglika krzemu w wysokosprawnych przekształtnikach
PublikacjaPółprzewodnikowe przyrządy mocy z węglika krzemu (SiC) osiągnęły poziom technologiczny umożliwiający powszechne stosowanie w układach przekształtnikowych. W artykule omówiono ostatnie osiągnięcia dotyczące układów przekształtnikowych z przyrządami z węglika krzemu oraz wybrane wyniki badań realizowane na Politechnice Gdańskiej. W artykule opisano właściwości statyczne i dynamiczne tranzystorów MOSFET i JFET z węglika krzemu oraz...
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Dual Active Bridge (DAB) DC-DC converter for multilevel propulsion converters for electrical multiple units (EMU)
PublikacjaSemiconductor power devices made from silicon carbide (SiC) reached a level of technology enabling their widespread use in power converters. Two different approaches to implementation of modern traction converters in electric multiple units (EMU) have been presented in recent years: (i) 3.3-kV SiC MOSFET-based three-level PWM inverter with regenerative braking and (ii) 6.5-kV IGBT-based four-quadrant power electronic traction transformer...
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Medium-Voltage Drives: Challenges and existing technology
PublikacjaThe article presents an overview of state-of-art solutions, advances, and design and research trends in medium-voltage (MV) drive technologies - and also discusses the challenges and requirements associated with the use of such drives. The choice and deployment of MV drives in industries are associated with numerous requirements related to the front-end converter (grid side) and inverter (machine side). The focus is on solutions...
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Integrated circuit structure surface images obtained with contact capacitive imaging technique
Dane BadawczeThe measurements were done using NTEGRA Prima (NT-MDT) device. CSG 10Pt probe.
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Microfluidic devices for photo-and spectroelectrochemical applications
PublikacjaThe review presents recent developments in electrochemical devices for photo- and spectroelectrochemical investigations, with the emphasis on miniaturization (i.e., nanointerdigitated complementary metal-oxide-semiconductor devices, micro- and nano-porous silicon membranes or microoptoelectromechanical systems), silica glass/microreactors (i.e., plasmonic, Raman spectroscopy or optical microcavities) or polymer-based devices (i.e.,...
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Grzegorz Lentka dr hab. inż.
OsobyGrzegorz Lentka uzyskał tytuł magistra inżyniera w roku 1996 na Wydziale Elektroniki, Telekomunikacji i Informatyki Politechniki Gdańskiej w zakresie systemów pomiarowych. Stopień doktora nauk technicznych uzyskał w roku 2003, a doktora habilitowanego w 2014. Obecnie zatrudniony jest w Katedrze Metrologii i Optoelektroniki na stanowisku profesora PG. W ramach prowadzonej dydaktyki zajmuje się zagadnieniami związanymi z interfejsami...
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Measurements of radiation emission of a portable power bank with a capacity of 10400 mAh
Dane BadawczeThe dataset contains the emission measurement results that are part of comprehensive tests carried out for portable power banks with different capacities. The measurements were performed in the frequency range from 30 MHz to 3 GHz using a Gigahertz Transverse Electromagnetic (GTEM) cell (Fig. 1). The test setup was configured to measure a portable power...
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Measurements of radiation emission of a portable power bank with a capacity of 5200 mAh
Dane BadawczeThe dataset contains the emission measurement results that are part of comprehensive tests carried out for portable power banks with different capacities. The measurements were performed in the frequency range from 30 MHz to 3 GHz using a Gigahertz Transverse Electromagnetic (GTEM) cell. The test setup was configured to measure a portable power bank...
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Measurements of radiation emission of a portable power bank with a capacity of 2600 mAh
Dane BadawczeThe dataset contains the emission measurement results that are part of comprehensive tests carried out for portable power banks with different capacities. The measurements were performed in the frequency range from 30 MHz to 3 GHz using a Gigahertz Transverse Electromagnetic (GTEM) cell. The test setup was configured to measure a portable power bank...
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Ryszard Jan Barczyński dr hab. inż.
OsobyRyszard Jan Barczyński (ur. 24 czerwca 1957 roku w Gdańsku), polski naukowiec, inżynier, specjalista z dziedziny fizyki ciała stałego i elektronicznych technik pomiarowych. W 1976 roku uzyskał maturę w IV Liceum Ogólnokształcącym im. Tadeusza Kościuszki w Toruniu. Studia wyższe ukończył w 1981 roku w Instytucie Fizyki Politechniki Gdańskiej w specjalności fizyki ciała stałego, uzyskując tytuł zawodowy magistra inżyniera. Od 1981...
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Real-time working gas recognition system based on the array of semiconductor gas sensors and portable computer Raspberry PI
PublikacjaThe gas-analyzing systems based on the array of partially selective gas sensors and pattern-recognition techniques are potentially fast and low-cost alternative for other devices, like gas analysers. They give the possibility of recognition the type and the concentration of measured volatile compounds in their working environment. In this work we present the implementation of gas recognition system, in which the signals from an...
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Edge-Guided Mode Performance and Applications in Nonreciprocal Millimeter-Wave Gyroelectric Components
PublikacjaThe analogies between the behavior of gyromagnetic and gyroelectric nonreciprocal structures, the use of the simple transfer matrix approach, and the edge-guided (EG) wave property, supported in a parallel plate model for integrated magnetized semiconductor waveguide, are investigated in those frequency regions, where the effective permittivity is negative or positive. As with their ferrite counterparts, the leakage of the EG waves...
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Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
PublikacjaThis paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching,...
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The effect of boron concentration on the electrical, morphological and optical properties of boron-doped nanocrystalline diamond sheets: Tuning the diamond-on-graphene vertical junction
PublikacjaIn this paper, the effect of boron doping on the electrical, morphological and structural properties of free-standing nanocrystalline diamond sheets (thickness ~ 1 μm) was investigated. For this purpose, we used diamond films delaminated from a mirror-polished tantalum substrate following a microwave plasma-assisted chemical vapor deposition process, each grown with a different [B]/[C] ratio (up to 20,000 ppm) in the gas phase....
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A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublikacjaThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
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TRANSFER OF ELECTRIC ENERGY [2023/24]
Kursy OnlineCourse content: Basic information on the structure of the power system, the major devices (components) for generation, transmission and distribution of electricity. Active and reactive power generation and their sources. Power supply networks. Tasks, structure, parameters. AC and DC transmission of electricity. Equivalent diagrams of the components of the power system. Steady state load flow calculation: currents, voltage,...
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TRANSFER OF ELECTRIC ENERGY [2022/23]
Kursy OnlineCourse content: Basic information on the structure of the power system, the major devices (components) for generation, transmission and distribution of electricity. Active and reactive power generation and their sources. Power supply networks. Tasks, structure, parameters. AC and DC transmission of electricity. Equivalent diagrams of the components of the power system. Steady state load flow calculation: currents, voltage,...
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Gas sampling system for matrix of semiconductor gas sensors
PublikacjaSemiconductor gas sensors are popular commercial sensors applied in numerous gas detection systems. They are reliable, small, rugged and inexpensive. However, there are a few problem limiting the wider use of such sensors. Semiconductor gas sensor usually exhibits a low selectivity, low repeatability, drift of response, strong temperature and moisture influence on sensor properties. Sample flow rate is one of the parameters that...
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Ewa Klugmann-Radziemska prof. dr hab.
OsobyEwa Klugmann-Radziemska ukończyła studia wyższe na kierunku fizyka na Uniwersytecie Gdańskim, a od roku 1996 związana jest z Politechniką Gdańską, kiedy to rozpoczęła studia doktoranckie. Obecnie jest profesorem na Wydziale Chemicznym Politechniki Gdańskiej, od roku 2006 kierownikiem Katedry Aparatury i Maszynoznawstwa Chemicznego. W latach 2008–2016 pełniła funkcję Prodziekana ds. współpracy i rozwoju, w latach 2016-2019 była...
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The Methods for RTS Noise Identification
PublikacjaIn the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non-Gaussian components in the noise signal in a frequency domain.
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Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model
PublikacjaThis article proposes a photothermal model to reveal the thermo-magneto-mechanical properties of semiconductor materials, including coupled diffusion equations for thermal conductivity, elasticity, and excess carrier density. The proposed model is developed to account for the optical heating that occurs through the semiconductor medium. The Moore–Gibson–Thompson (MGT) equation of the fourth-order serves as the theoretical framework...
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Analytical Estimation of Power Losses in a Dual Active Bridge Converter Controlled with a Single-Phase Shift Switching Scheme
PublikacjaMicro-grid solutions around the world rely on the operation of DC/DC power conver- sion systems. The most commonly used solution for these topologies is the use of a dual active bridge (DAB) converter. Increasing the efficiency and reliability of this system contributes to the improvement in the stability of the entire microgrid. This paper discussed an analytical method of energy efficiency and power loss estimation in a single...
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Single and Three -Phase PWM AC/AC Converters as Semiconductor Transformers
PublikacjaAC voltage transformation circuits contain pure or reactance PWM AC/AC converters. These circuits can be treated as AC/AC semiconductor transformers. This paper reviews single-phase and three-phase topologies: both non-isolated and isolated, single as well as two quadrant structure. Additionally, this paper present selected examples of their applications.